Memory devices having vertical transistors and methods for forming the same

ABSTRACT

In certain aspects, a memory device includes a memory cell including a vertical transistor, and a storage unit having a first end coupled to a first terminal of the vertical transistor. The vertical transistor includes a semiconductor body extending in a first direction, and a gate structure coupled to at least one side of the semiconductor body. The memory device also includes a metal bit line coupled to a second terminal of the vertical transistor via an ohmic contact and extending in a second direction perpendicular to the first direction. The memory device further includes a dielectric layer opposing the memory cell with the metal bit line positioned between the dielectric layer and the memory cell. The memory device further includes a conductor extending from the dielectric layer to couple to a second end of the storage unit.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of International Application No.PCT/CN2021/115594, filed on Aug. 31, 2021, entitled “MEMORY DEVICESHAVING VERTICAL TRANSISTORS AND METHODS FOR FORMING THE SAME,” which ishereby incorporated by reference in its entirety. This application isalso related to U.S. application Ser. No. 17/553,763 filed on Dec. 16,2021, entitled “MEMORY DEVICES HAVING VERTICAL TRANSISTORS AND METHODSFOR FORMING THE SAME,” U.S. application Ser. No. 17/553,765 filed onDec. 16, 2021, entitled “MEMORY DEVICES HAVING VERTICAL TRANSISTORS ANDMETHODS FOR FORMING THE SAME,” U.S. application Ser. No. 17/553,772filed on Dec. 16, 2021, entitled “MEMORY DEVICES HAVING VERTICALTRANSISTORS AND METHODS FOR FORMING THE SAME,” U.S. application Ser. No.17/553,773 filed on Dec. 16, 2021, entitled “MEMORY DEVICES HAVINGVERTICAL TRANSISTORS AND METHODS FOR FORMING THE SAME,” U.S. applicationSer. No. 17/553,776 filed on Dec. 16, 2021, entitled “MEMORY DEVICESHAVING VERTICAL TRANSISTORS AND METHODS FOR FORMING THE SAME,” and U.S.application Ser. No. 17/553,781 filed on Dec. 16, 2021, entitled “memorydevices having vertical transistors and methods for forming the same,”all of which are hereby incorporated by reference in their entireties.

BACKGROUND

The present disclosure relates to memory devices and fabrication methodsthereof.

Planar memory cells are scaled to smaller sizes by improving processtechnology, circuit design, programming algorithm, and fabricationprocess. However, as feature sizes of the memory cells approach a lowerlimit, planar process and fabrication techniques become challenging andcostly. As a result, memory density for planar memory cells approachesan upper limit.

A three-dimensional (3D) memory architecture can address the densitylimitation in planar memory cells. The 3D memory architecture includes amemory array and peripheral circuits for facilitating operations of thememory array.

SUMMARY

In one aspect, a 3D memory device includes a first semiconductorstructure, a second semiconductor structure, and a bonding interfacebetween the first semiconductor structure and the second semiconductorstructure. The first semiconductor structure includes a peripheralcircuit. The second semiconductor structure includes an array of memorycells and a plurality of bit lines coupled to the memory cells and eachextending in a second direction perpendicular to the first direction.Each of the memory cells includes a vertical transistor extending in afirst direction, and a storage unit coupled to the vertical transistor.The vertical transistor includes a semiconductor body extending in thefirst direction, and a gate structure in contact with all sides of thesemiconductor body. A respective one of the bit lines and a respectivestorage unit are coupled to opposite ends of each one of the memorycells in the first direction. The array of memory cells is coupled tothe peripheral circuit across the bonding interface.

In another aspect, a memory system includes a memory device configuredto store data and a memory controller coupled to the memory device. Thememory device includes a first semiconductor structure, a secondsemiconductor structure, and a bonding interface between the firstsemiconductor structure and the second semiconductor structure. Thefirst semiconductor structure includes a peripheral circuit. The secondsemiconductor structure includes an array of memory cells and aplurality of bit lines coupled to the memory cells and each extending ina second direction perpendicular to the first direction. Each of thememory cells includes a vertical transistor extending in a firstdirection, and a storage unit coupled to the vertical transistor. Thevertical transistor includes a semiconductor body extending in the firstdirection, and a gate structure in contact with all sides of thesemiconductor body. A respective one of the bit lines and a respectivestorage unit are coupled to opposite ends of each one of the memorycells in the first direction. The array of memory cells is coupled tothe peripheral circuit across the bonding interface. The memorycontroller is configured to control the array of memory cells throughthe peripheral circuit and the bit lines.

In still another aspect, a method for forming a 3D memory device isdisclosed. A first semiconductor structure including a peripheralcircuit is formed. A second semiconductor structure is formed. To formthe second semiconductor structure, an array of memory cells is formed,and a plurality of bit lines coupled to the memory cells are formed.Each of the memory cells includes a vertical transistor extending in afirst direction, and a storage unit coupled to the vertical transistor.The vertical transistor includes a semiconductor body extending in thefirst direction, and a gate structure in contact with all sides of thesemiconductor body. A respective one of the bit lines and a respectivestorage unit are coupled to opposite ends of each one of the memorycells vertically. The first semiconductor structure and the secondsemiconductor structure are bonded in a face-to-face manner, such thatthe array of memory cells is coupled to the peripheral circuit across abonding interface.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated herein and form a partof the specification, illustrate aspects of the present disclosure and,together with the description, further serve to explain the principlesof the present disclosure and to enable a person skilled in thepertinent art to make and use the present disclosure.

FIG. 1A illustrates a schematic view of a cross-section of a 3D memorydevice, according to some aspects of the present disclosure.

FIG. 1B illustrates a schematic view of a cross-section of another 3Dmemory device, according to some aspects of the present disclosure.

FIG. 2 illustrates a schematic diagram of a memory device includingperipheral circuits and an array of memory cells each having a verticaltransistor, according to some aspects of the present disclosure.

FIG. 3 illustrates a schematic circuit diagram of a memory deviceincluding peripheral circuits and an array of dynamic random-accessmemory (DRAM) cells, according to some aspects of the presentdisclosure.

FIG. 4 illustrates a schematic circuit diagram of a memory deviceincluding peripheral circuits and an array of phase-change memory (PCM)cells, according to some aspects of the present disclosure.

FIG. 5 illustrates a plan view of an array of memory cells eachincluding a vertical transistor in a memory device, according to someaspects of the present disclosure.

FIG. 6A illustrates a side view of a cross-section of a 3D memory deviceincluding vertical transistors, according to some aspects of the presentdisclosure.

FIG. 6B illustrates a side view of a cross-section of another 3D memorydevice including vertical transistors, according to some aspects of thepresent disclosure.

FIG. 6C illustrates a side view of a cross-section of still another 3Dmemory device including vertical transistors, according to some aspectsof the present disclosure.

FIG. 6D illustrates a side view of a cross-section of yet another 3Dmemory device including vertical transistors, according to some aspectsof the present disclosure.

FIG. 6E illustrates a side view of a cross-section of yet another 3Dmemory device including vertical transistors, according to some aspectsof the present disclosure.

FIG. 7 illustrates a side view of a cross-section of yet another 3Dmemory device including vertical transistors, according to some aspectsof the present disclosure.

FIG. 8 illustrates a plan view of another array of memory cells eachincluding a vertical transistor in a memory device, according to someaspects of the present disclosure.

FIG. 9 illustrates a side view of a cross-section of yet another 3Dmemory device including vertical transistors, according to some aspectsof the present disclosure.

FIGS. 10A-10M illustrate a fabrication process for forming a 3D memorydevice including vertical transistors, according to some aspects of thepresent disclosure.

FIGS. 11A-11I illustrate a fabrication process for forming another 3Dmemory device including vertical transistors, according to some aspectsof the present disclosure.

FIGS. 12A-12H illustrate a fabrication process for forming still another3D memory device including vertical transistors, according to someaspects of the present disclosure.

FIGS. 13A-13H illustrate a fabrication process for forming yet another3D memory device including vertical transistors, according to someaspects of the present disclosure.

FIGS. 14A-14E illustrate a fabrication process for forming yet another3D memory device including vertical transistors, according to someaspects of the present disclosure.

FIGS. 15A-15D illustrate a fabrication process for forming yet another3D memory device including vertical transistors, according to someaspects of the present disclosure.

FIG. 16 illustrates a plan view of still another array of memory cellseach including a vertical transistor in a memory device, according tosome aspects of the present disclosure.

FIG. 17 illustrates a side view of a cross-section of yet another 3Dmemory device including vertical transistors, according to some aspectsof the present disclosure.

FIG. 18 illustrates a perspective view of an array of verticaltransistors, according to some aspects of the present disclosure.

FIGS. 19A-19M illustrate a fabrication process for forming yet another3D memory device including vertical transistors, according to someaspects of the present disclosure.

FIG. 20 illustrates a plan view of yet another array of memory cellseach including a vertical transistor in a memory device, according tosome aspects of the present disclosure.

FIG. 21 illustrates a side view of a cross-section of yet another 3Dmemory device including vertical transistors, according to some aspectsof the present disclosure.

FIGS. 22A-22M illustrate a fabrication process for forming yet another3D memory device including vertical transistors, according to someaspects of the present disclosure.

FIG. 23 illustrates a flowchart of a method for forming a 3D memorydevice including vertical transistors, according to some aspects of thepresent disclosure.

FIG. 24 illustrates a flowchart of a method for forming an array ofmemory cells each including a vertical transistor, according to someaspects of the present disclosure.

FIG. 25 illustrates a flowchart of a method for forming another array ofmemory cells each including a vertical transistor, according to someaspects of the present disclosure.

FIG. 26 illustrates a flowchart of a method for forming still anotherarray of memory cells each including a vertical transistor, according tosome aspects of the present disclosure.

FIG. 27 illustrates a block diagram of an exemplary system having amemory device, according to some aspects of the present disclosure.

The present disclosure will be described with reference to theaccompanying drawings.

DETAILED DESCRIPTION

Although specific configurations and arrangements are discussed, itshould be understood that this is done for illustrative purposes only.As such, other configurations and arrangements can be used withoutdeparting from the scope of the present disclosure. Also, the presentdisclosure can also be employed in a variety of other applications.Functional and structural features as described in the presentdisclosures can be combined, adjusted, and modified with one another andin ways not specifically depicted in the drawings, such that thesecombinations, adjustments, and modifications are within the scope of thepresent disclosure.

In general, terminology may be understood at least in part from usage incontext. For example, the term “one or more” as used herein, dependingat least in part upon context, may be used to describe any feature,structure, or characteristic in a singular sense or may be used todescribe combinations of features, structures or characteristics in aplural sense. Similarly, terms, such as “a,” “an,” or “the,” again, maybe understood to convey a singular usage or to convey a plural usage,depending at least in part upon context. In addition, the term “basedon” may be understood as not necessarily intended to convey an exclusiveset of factors and may, instead, allow for existence of additionalfactors not necessarily expressly described, again, depending at leastin part on context.

It should be readily understood that the meaning of “on,” “above,” and“over” in the present disclosure should be interpreted in the broadestmanner such that “on” not only means “directly on” something but alsoincludes the meaning of “on” something with an intermediate feature or alayer therebetween, and that “above” or “over” not only means themeaning of “above” or “over” something but can also include the meaningit is “above” or “over” something with no intermediate feature or layertherebetween (directly on something).

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper,” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations), and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

As used herein, the term “substrate” refers to a material onto whichsubsequent material layers are added. The substrate itself can bepatterned. Materials added on top of the substrate can be patterned orcan remain unpatterned. Furthermore, the substrate can include a widearray of semiconductor materials, such as silicon, germanium, galliumarsenide, indium phosphide, etc. Alternatively, the substrate can bemade from an electrically non-conductive material, such as a glass, aplastic, or a sapphire wafer.

As used herein, the term “layer” refers to a material portion includinga region with a thickness. A layer can extend over the entirety of anunderlying or overlying structure or may have an extent less than theextent of an underlying or overlying structure. Further, a layer can bea region of a homogeneous or inhomogeneous continuous structure that hasa thickness less than the thickness of the continuous structure. Forexample, a layer can be located between any pair of horizontal planesbetween, or at, a top surface and a bottom surface of the continuousstructure. A layer can extend horizontally, vertically, and/or along atapered surface. A substrate can be a layer, can include one or morelayers therein, and/or can have one or more layers thereupon,thereabove, and/or therebelow. A layer can include multiple layers. Forexample, an interconnect layer can include one or more conductors andcontact layers (in which interconnect lines and/or vertical interconnectaccess (via) contacts are formed) and one or more dielectric layers.

Transistors are used as the switch or selecting devices in the memorycells of some memory devices, such as DRAM, PCM, and ferroelectric DRAM(FRAM). However, the planar transistors commonly used in existing memorycells usually have a horizontal structure with buried word lines in thesubstrate and bit lines above the substrate. Since the source and drainof a planar transistor are disposed laterally at different locations,which increases the area occupied by the transistor. The design ofplanar transistors also complicates the arrangement of interconnectedstructures, such as word lines and bit lines, coupled to the memorycells, for example, limiting the pitches of the word lines and/or bitlines, thereby increasing the fabrication complexity and reducing theproduction yield. Moreover, because the bit lines and the storage units(e.g., capacitors or PCM elements) are arranged on the same side of theplanar transistors (above the transistors and substrate), the bit lineprocess margin is limited by the storage units, and the couplingcapacitance between the bit lines and storage units, such as capacitors,are increased. Planar transistors may also suffer from a high leakagecurrent as the saturated drain current keeps increasing, which isundesirable for the performance of memory devices.

On the other hand, the memory cell array and the peripheral circuits forcontrolling the memory cell array are usually arranged side-by-side inthe same plane. As the number of memory cells keeps increasing, tomaintain the same chip size, the dimensions of the components in thememory cell array, such as transistors, word lines, and/or bit lines,need to keep decreasing in order not to significantly reduce the memorycell array efficiency.

To address one or more of the aforementioned issues, the presentdisclosure introduces a solution in which vertical transistors replacethe planar transistors as the switch and selecting devices in a memorycell array of memory devices (e.g., DRAM, PCM, and FRAM). Compared withplanar transistors, the vertically arranged transistors (e.g., the drainand source are overlapped in the plan view) can reduce the area of thetransistor as well as simplify the layout of the interconnectstructures, e.g., metal wiring the word lines and bit lines, which canreduce the fabrication complexity and improve the yield. For example,the pitches of word lines and/or bit lines can be reduced for ease offabrication. The vertical structures of the transistors also allow thebit lines and storage units, such as capacitors, to be arranged onopposite sides of the transistors in the vertical direction (e.g., oneabove and on below the transistors), such that the process margin of thebit lines can be increased and the coupling capacitance between the bitlines and the storage units can be decreased.

Consistent with the scope of the present disclosure, according to someaspects of the present disclosure, the memory cell array having verticaltransistors and the peripheral circuits of the memory cell array can beformed on different wafers and bonded together in a face-to-face manner.Thus, the thermal budget of fabricating the memory cell array does notaffect the fabrication of the peripheral circuits. The stacked memorycell array and peripheral circuits can also reduce the chip sizecompared with the side-by-side arrangement, thereby improving the arrayefficiency. In some implementations, more than one memory cell array isstacked over one another using bonding techniques to further increasethe array efficiency. In some implementations, the word lines and bitlines are disposed close to the bonding interface due to the verticallyarranged transistors, which can be coupled to the peripheral circuitsthrough a large number (e.g., millions) of parallel bonding contactsacross the bonding interface can make direct, short-distance (e.g.,micron-level) electrical connections between the memory cell array andperipheral circuits to increase the throughput and input/output (I/O)speed of the memory devices.

In some implementations, the vertical transistors disclosed hereininclude multi-gate transistors (e.g., gate-all-around (GAA) transistors,tri-gate transistors, or double-gate transistors), which can have alarger gate control area to achieve better channel control with asmaller subthreshold swing. Since the channel is fully depleted, theleakage current of multi-gate transistors can be significantly reducedas well. Thus, using multi-gate transistors instead of planartransistors can achieve a much better speed (saturated draincurrent)/leakage current performance.

In some implementations, the vertical transistors disclosed hereininclude single-gate transistors (a.k.a. single-side gate transistors) ina mirror-symmetric arrangement with respect to adjacent transistors inthe bit line direction as a result of splitting multi-gate transistors(e.g., double-gate transistors) using trench isolations extending alongthe word line direction. Thus, the memory cell density in the bit linedirection can be significantly increased (e.g., doubled) without undulycomplicating the fabrication process compared with using processes, suchas self-aligned double patterning (SADP). Also, the mirror-symmetricsingle-gate transistors have a larger process window for word line, bitline, and transistor pitch reduction, compared to either planartransistors or multi-gate vertical transistors, for example, withdual-side or all-around gates.

FIG. 1A illustrates a schematic view of a cross-section of a 3D memorydevice 100, according to some aspects of the present disclosure. 3Dmemory device 100 represents an example of a bonded chip. The componentsof 3D memory device 100 (e.g., memory cell array and peripheralcircuits) can be formed separately on different substrates and thenjointed to form a bonded chip. 3D memory device 100 can include a firstsemiconductor structure 102 including the peripheral circuits of amemory cell array. 3D memory device 100 can also include a secondsemiconductor structure 104 including the memory cell array. Theperipheral circuits (a.k.a. control and sensing circuits) can includeany suitable digital, analog, and/or mixed-signal circuits used forfacilitating the operations of the memory cell array. For example, theperipheral circuit can include one or more of a page buffer, a decoder(e.g., a row decoder and a column decoder), a sense amplifier, a driver(e.g., a word line driver), an input/output (I/O) circuit, a chargepump, a voltage source or generator, a current or voltage reference, anyportions (e.g., a sub-circuit) of the functional circuits mentionedabove, or any active or passive components of the circuit (e.g.,transistors, diodes, resistors, or capacitors). The peripheral circuitsin first semiconductor structure 102 use complementarymetal-oxide-semiconductor (CMOS) technology, e.g., which can beimplemented with logic processes (e.g., technology nodes of 90 nm, 65nm, 60 nm, 45 nm, 32 nm, 28 nm, 22 nm, 20 nm, 16 nm, 14 nm, 10 nm, 7 nm,5 nm, 3 nm, 2 nm, etc.), according to some implementations.

As shown in FIG. 1A, 3D memory device 100 can also include firstsemiconductor structure 104 including an array of memory cells (memorycell array) that can use transistors as the switch and selectingdevices. In some implementations, the memory cell array includes anarray of DRAM cells. For ease of description, a DRAM cell array may beused as an example for describing the memory cell array in the presentdisclosure. But it is understood that the memory cell array is notlimited to DRAM cell array and may include any other suitable types ofmemory cell arrays that can use transistors as the switch and selectingdevices, such as PCM cell array, static random-access memory (SRAM) cellarray, FRAM cell array, resistive memory cell array, magnetic memorycell array, spin transfer torque (STT) memory cell array, to name a few,or any combination thereof.

Second semiconductor structure 104 can be a DRAM device in which memorycells are provided in the form of an array of DRAM cells. In someembodiments, each DRAM cell includes a capacitor for storing a bit ofdata as a positive or negative electrical charge as well as one or moretransistors (a.k.a. pass transistors) that control (e.g., switch andselecting) access to it. In some implementations, each DRAM cell is aone-transistor, one-capacitor (1T1C) cell. Since transistors always leaka small amount of charge, the capacitors will slowly discharge, causinginformation stored in them to drain. As such, a DRAM cell has to berefreshed to retain data, for example, by the peripheral circuit infirst semiconductor structure 102, according to some implementation.

As shown in FIG. 1A, 3D memory device 100 further includes a bondinginterface 106 vertically between (in the vertical direction, e.g., thez-direction in FIG. 1A) first semiconductor structure 102 and secondsemiconductor structure 104. As described below in detail, first andsecond semiconductor structures 102 and 104 can be fabricated separately(and in parallel in some implementations) such that the thermal budgetof fabricating one of first and second semiconductor structures 102 and104 does not limit the processes of fabricating another one of first andsecond semiconductor structures 102 and 104. Moreover, a large number ofinterconnects (e.g., bonding contacts) can be formed through bondinginterface 106 to make direct, short-distance (e.g., micron-level)electrical connections between first semiconductor structure 102 andsecond semiconductor structure 104, as opposed to the long-distance(e.g., millimeter or centimeter-level) chip-to-chip data bus on thecircuit board, such as printed circuit board (PCB), thereby eliminatingchip interface delay and achieving high-speed I/O throughput withreduced power consumption. Data transfer between the memory cell arrayin second semiconductor structure 104 and the peripheral circuits infirst semiconductor structure 102 can be performed through theinterconnects (e.g., bonding contacts) across bonding interface 106. Byvertically integrating first and second semiconductor structures 102 and104, the chip size can be reduced, and the memory cell density can beincreased.

It is understood that the relative positions of stacked first and secondsemiconductor structures 102 and 104 are not limited. FIG. 1Billustrates a schematic view of a cross-section of another exemplary 3Dmemory device 101, according to some implementations. Different from 3Dmemory device 100 in FIG. 1A in which second semiconductor structure 104including the memory cell array is above first semiconductor structure102 including the peripheral circuits, in 3D memory device 101 in FIG.1B, first semiconductor structure 102 including the peripheral circuitis above second semiconductor structure 104 including the memory cellarray. Nevertheless, bonding interface 106 is formed vertically betweenfirst and second semiconductor structures 102 and 104 in 3D memorydevice 101, and first and second semiconductor structures 102 and 104are jointed vertically through bonding (e.g., hybrid bonding) accordingto some implementations. Hybrid bonding, also known as “metal/dielectrichybrid bonding,” is a direct bonding technology (e.g., forming bondingbetween surfaces without using intermediate layers, such as solder oradhesives) and can obtain metal-metal (e.g., copper-to-copper) bondingand dielectric-dielectric (e.g., silicon oxide-to-silicon oxide) bondingsimultaneously. Data transfer between the memory cell array in secondsemiconductor structure 104 and the peripheral circuits in firstsemiconductor structure 102 can be performed through the interconnects(e.g., bonding contacts) across bonding interface 106.

It is noted that x, y, and z axes are included in FIGS. 1A and 1B tofurther illustrate the spatial relationship of the components in 3Dmemory devices 100 and 101. The substrate of the 3D memory deviceincludes two lateral surfaces extending laterally in the x-y plane: atop surface on the front side of the wafer on which the semiconductordevices can be formed, and a bottom surface on the backside opposite tothe front side of the wafer. The z-axis is perpendicular to both the xand y axes. As used herein, whether one component (e.g., a layer or adevice) is “on,” “above,” or “below” another component (e.g., a layer ora device) of the 3D memory device is determined relative to thesubstrate of the 3D memory device in the z-direction (the verticaldirection perpendicular to the x-y plane, e.g., the thickness directionof the substrate) when the substrate is positioned in the lowest planeof the 3D memory device in the z-direction. The same notion fordescribing the spatial relationships is applied throughout the presentdisclosure.

FIG. 2 illustrates a schematic diagram of a memory device 200 includingperipheral circuits and an array of memory cells each having a verticaltransistor, according to some aspects of the present disclosure. Memorydevice 200 can include a memory cell array 201 and peripheral circuits202 coupled to memory cell array 201. 3D memory devices 100 and 101 maybe examples of memory device 200 in which memory cell array 201 andperipheral circuits 202 may be included in second and firstsemiconductor structures 104 and 102, respectively. Memory cell array201 can be any suitable memory cell array in which each memory cell 208includes a vertical transistor 210 and a storage unit 212 coupled tovertical transistor 210. In some implementations, memory cell array 201is a DRAM cell array, and storage unit 212 is a capacitor for storingcharge as the binary information stored by the respective DRAM cell. Insome implementations, memory cell array 201 is a PCM cell array, andstorage unit 212 is a PCM element (e.g., including chalcogenide alloys)for storing binary information of the respective PCM cell based on thedifferent resistivities of the PCM element in the amorphous phase andthe crystalline phase. In some implementations, memory cell array 201 isa FRAM cell array, and storage unit 212 is a ferroelectric capacitor forstoring binary information of the respective FRAM cell based on theswitch between two polarization states of ferroelectric materials underan external electric field.

As shown in FIG. 2 , memory cells 208 can be arranged in atwo-dimensional (2D) array having rows and columns. Memory device 200can include word lines 204 coupling peripheral circuits 202 and memorycell array 201 for controlling the switch of vertical transistors 210 inmemory cells 208 located in a row, as well as bit lines 206 couplingperipheral circuits 202 and memory cell array 201 for sending data toand/or receiving data from memory cells 208 located in a column. Thatis, each word line 204 is coupled to a respective row of memory cells208, and each bit line is coupled to a respective column of memory cells208.

Consistent with the scope of the present disclosure, verticaltransistors 210, such as vertical metal-oxide-semiconductor field-effecttransistors (MOSFETs), can replace the planar transistors as the passtransistors of memory cells 208 to reduce the area occupied by the passtransistors, the coupling capacitance, as well as the interconnectrouting complexity, as described below in detail. As shown in FIG. 2 ,in some implementations, different from planar transistors in which theactive regions are formed in the substrates, vertical transistor 210includes a semiconductor body 214 extending vertically (in thez-direction) above the substrate (not shown). That is, semiconductorbody 214 can extend above the top surface of the substrate to allowchannels to be formed not only at the top surface of semiconductor body214, but also at one or more side surfaces thereof. As shown in FIG. 2 ,for example, semiconductor body 214 can have a cuboid shape to exposefour sides thereof. It is understood that semiconductor body 214 mayhave any suitable 3D shape, such as polyhedron shapes or a cylindershape. That is, the cross-section of semiconductor body 214 in the planview (e.g., in the x-y plane) can have a square shape, a rectangularshape (or a trapezoidal shape), a circular (or an oval shape), or anyother suitable shapes. It is understood that consistent with the scopeof the present disclosure, for semiconductor bodies that have a circularor oval shape of their cross-sections in the plan view, thesemiconductor bodies may still be considered as having multiple sides,such that the gate structures are in contact with more than one side ofthe semiconductor bodies. As described below with respect to thefabrication process, semiconductor body 214 can be formed from thesubstrate (e.g., by etching or epitaxy) and thus, has the samesemiconductor material (e.g., silicon crystalline silicon) as thesubstrate (e.g., a silicon substrate).

As shown in FIG. 2 , vertical transistor 210 can also include a gatestructure 216 in contact with one or more sides of semiconductor body214, e.g., in one or more planes of the side surface(s) of the activeregion. In other words, the active region of vertical transistor 210,e.g., semiconductor body 214, can be at least partially surrounded bygate structure 216. Gate structure 216 can include a gate dielectric 218over one or more sides of semiconductor body 214, e.g., in contact withfour side surfaces of semiconductor body 214 as shown in FIG. 2 . Gatestructure 216 can also include a gate electrode 220 over and in contactwith gate dielectric 218. Gate dielectric 218 can include any suitabledielectric materials, such as silicon oxide, silicon nitride, siliconoxynitride, or high-k dielectrics. For example, gate dielectric 218 mayinclude silicon oxide, which is a form of gate oxide. Gate electrode 220can include any suitable conductive materials, such as polysilicon,metals (e.g., tungsten (W), copper (Cu), aluminum (Al), etc.), metalcompounds (e.g., titanium nitride (TiN), tantalum nitride (TaN), etc.),or silicides. For example, gate electrode 220 may include dopedpolysilicon, which is a form of a gate poly. In some implementations,gate electrode 220 includes multiple conductive layers, such as a Wlayer over a TiN layer. It is understood that gate electrode 220 andword line 204 may be a continuous conductive structure in some examples.In other words, gate electrode 220 may be viewed as part of word line204 that forms gate structure 216, or word line 204 may be viewed as theextension of gate electrode 220 to be coupled to peripheral circuits202.

As shown in FIG. 2 , vertical transistor 210 can further include a pairof a source and a drain (S/D, dope regions, a.k.a., source electrode anddrain electrode) formed at the two ends of semiconductor body 214 in thevertical direction (the z-direction), respectively. The source and draincan be doped with any suitable P-type dopants, such as boron (B) orGallium (Ga), or any suitable N-type dopants, such as phosphorus (P) orarsenic (As). The source and drain can be separated by gate structure216 in the vertical direction (the z-direction). In other words, gatestructure 216 is formed vertically between the source and drain. As aresult, one or more channels (not shown) of vertical transistor 210 canbe formed in semiconductor body 214 vertically between the source anddrain when a gate voltage applied to gate electrode 220 of gatestructure 216 is above the threshold voltage of vertical transistor 210.That is, each channel of vertical transistors 210 is also formed in thevertical direction along which semiconductor body 214 extends, accordingto some implementations.

In some implementations, as shown in FIG. 2 , vertical transistor 210 isa multi-gate transistor. That is, gate structure 216 can be in contactwith more than one side of semiconductor body 214 (e.g., four sides inFIG. 2 ) to form more than one gate, such that more than one channel canbe formed between the source and drain in operation. That is, differentfrom the planar transistor that includes only a single planar gate (andresulting in a single planar channel), vertical transistor 210 shown inFIG. 2 can include multiple vertical gates on multiple sides ofsemiconductor body 214 due to the 3D structure of semiconductor body 214and gate structure 216 that surrounds the multiple sides ofsemiconductor body 214. As a result, compared with planar transistors,vertical transistor 210 shown in FIG. 2 can have a larger gate controlarea to achieve better channel control with a smaller subthresholdswing. Since the channel is fully depleted, the leakage current(I_(off)) of vertical transistor 210 can be significantly reduced awell. As described below in detail, the multi-gate vertical transistorscan include double-gate vertical transistors (e.g., dual-side gatevertical transistors), tri-gate vertical transistors (e.g., tri-sidegate vertical transistors), and GAA vertical transistors.

It is understood that although vertical transistor 210 is shown as amulti-gate transistor in FIG. 2 , the vertical transistors disclosedherein may also include single-gate transistors as described below indetail. That is, gate structure 216 may be in contact with a single sideof semiconductor body 214, for example, for the purpose of increasingthe transistor and memory cell density. It is also understood thatalthough gate dielectric 218 is shown as being separate (a separatestructure) from other gate dielectrics of adjacent vertical transistors(not shown), gate dielectric 218 may be part of a continuous dielectriclayer having multiple gate dielectrics of vertical transistors.

In planar transistors and some lateral multiple-gate transistors (e.g.,FinFET), the active regions, such as semiconductor bodies (e.g., Fins),extend laterally (in the x-y plane), and the source and the drain aredisposed at different locations in the same lateral plane (the x-yplane). In contrast, in vertical transistor 210, semiconductor body 214extends vertically (in the z-direction), and the source and the drainare disposed in the different lateral planes, according to someimplementations. In some implementations, the source and the drain areformed at two ends of semiconductor body 214 in the vertical direction(the z-direction), respectively, thereby being overlapped in the planview. As a result, the area (in the x-y plane) occupied by verticaltransistor 210 can be reduced compared with planar transistor andlateral multiple-gate transistors. Also, the metal wiring coupled tovertical transistors 210 can be simplified as well since theinterconnects can be routed in different planes. For example, bit lines206 and storage units 212 may be formed on opposite sides of verticaltransistor 210. In one example, bit line 206 may be coupled to thesource or the drain at the upper end of semiconductor body 214, whilestorage unit 212 may be coupled to the other source or the drain at thelower end of semiconductor body 214.

As shown in FIG. 2 , storage unit 212 can be coupled to the source orthe drain of vertical transistor 210. Storage unit 212 can include anydevices that are capable of storing binary data (e.g., 0 and 1),including but not limited to, capacitors for DRAM cells and FRAM cells,and PCM elements for PCM cells. In some implementations, verticaltransistor 210 controls the selection and/or the state switch of therespective storage unit 212 coupled to vertical transistor 210. In someimplementations as shown in FIG. 3 , each memory cell 208 is a DRAM cell302 including a transistor 304 (e.g., implementing using verticaltransistors 210 in FIG. 2 ) and a capacitor 306 (e.g., an example ofstorage unit 212 in FIG. 2 ). The gate of transistor 304 (e.g.,corresponding to gate electrode 220) may be coupled to word line 204,one of the source and the drain of transistor 304 may be coupled to bitline 206, the other one of the source and the drain of transistor 304may be coupled to one electrode of capacitor 306, and the otherelectrode of capacitor 306 may be coupled to the ground. In someimplementations as shown in FIG. 4 , each memory cell 208 is a PCM cell402 including a transistor 404 (e.g., implementing using verticaltransistors 210 in FIG. 2 ) and a PCM element 406 (e.g., an example ofstorage unit 212 in FIG. 2 ). The gate of transistor 404 (e.g.,corresponding to gate electrode 220) may be coupled to word line 204,one of the source and the drain of transistor 404 may be coupled to theground, the other one of the source and the drain of transistor 404 maybe coupled to one electrode of PCM element 406, and the other electrodeof PCM element 406 may be coupled to bit line 206.

Peripheral circuits 202 can be coupled to memory cell array 201 throughbit lines 206, word lines 204, and any other suitable metal wirings. Asdescribed above, peripheral circuits 202 can include any suitablecircuits for facilitating the operations of memory cell array 201 byapplying and sensing voltage signals and/or current signals through wordlines 204 and bit lines 206 to and from each memory cell 208. Peripheralcircuits 202 can include various types of peripheral circuits formedusing CMOS technologies.

According to some aspects of the present disclosure, the verticaltransistors of memory cells in a memory device (e.g., memory device 200)are multi-gate transistors, and the gate dielectrics of verticaltransistors in the word line direction are separate. For example, FIG. 5illustrates a plan view of an array of memory cells 502 each including avertical transistor in a memory device 500, according to some aspects ofthe present disclosure. As shown in FIG. 5 , memory device 500 caninclude a plurality of word lines 504 each extending in a first lateraldirection (the x-direction, referred to as the word line direction).Memory device 500 can also include a plurality of bit lines 506 eachextending in a second lateral direction perpendicular to the firstlateral direction (the y-direction, referred to as the bit linedirection). It is understood that FIG. 5 does not illustrate across-section of memory device 500 in the same lateral plane, and wordlines 504 and bit lines 506 may be formed in different lateral planesfor ease of routing as described below in detail.

Memory cells 502 can be formed at the intersections of word lines 504and bit lines 506. In some implementations, each memory cell 502includes a vertical transistor (e.g., vertical transistor 210 in FIG. 2) having a semiconductor body 508 and agate structure 510. Semiconductorbody 508 can extend in the vertical direction (the z-direction, notshown) perpendicular to the first and second lateral directions. Thevertical transistor can be a multi-gate transistor in which gatestructure 510 is in contact with a plurality of sides (e.g., all 4 sidesin FIG. 5 ) of semiconductor body 508 (the active region in whichchannels are formed). As shown in FIG. 5 , the vertical transistor is aGAA transistor in which gate structure 510 fully circumscribessemiconductor body 508 in the plan view. That is, gate structure 510circumscribes (e.g., surrounding and contacting) all four sides ofsemiconductor body 508 (having a rectangle or square-shapedcross-section) in the plan view, according to some implementations. Gatestructure 510 can include a gate dielectric 512 fully circumscribessemiconductor body 508 in the plan view, and a gate electrode 514 fullycircumscribes gate dielectric 512. In some implementation, gatedielectric 512 is laterally between gate electrode 514 and semiconductorbody 508 in the bit line direction and in the word line direction. Asdescribed above, gate electrode 514 may be part of word line 504, andword line 504 may be an extension of gate electrode 514. In someimplementations, gate structures 510 of a row of the verticaltransistors are continuous in the x-direction, as a shown in FIG. 5 .

As shown in FIG. 5 , gate electrodes 514 of adjacent verticaltransistors in the word line direction (the x-direction) are continuous,e.g., parts of a continuous conductive layer having gate electrodes 514and 504. In contrast, gate dielectrics 512 of adjacent verticaltransistors in the word line direction are separate, e.g., not parts ofa continuous dielectric layer having gate dielectrics 512.

FIG. 6A illustrates a side view of a cross-section of a 3D memory device600 including vertical transistors, according to some aspects of thepresent disclosure. 3D memory device 600 may be one example of memorydevice 500 including multi-gate vertical transistors in which gatestructures fully circumscribes semiconductor bodies in the plan view,e.g., GAA vertical transistors. It is understood that FIG. 6A is forillustrative purposes only and may not necessarily reflect the actualdevice structure (e.g., interconnections) in practice. As one example of3D memory device 100 described above with respect to FIG. 1A, 3D memorydevice 600 is a bonded chip including first semiconductor structure 102and second semiconductor structure 104 stacked over first semiconductorstructure 102. First and second semiconductor structures 102 and 104 arejointed at bonding interface 106 therebetween, according to someimplementations. As shown in FIG. 6A, first semiconductor structure 102can include a substrate 610, which can include silicon (e.g., singlecrystalline silicon, c-Si), silicon germanium (SiGe), gallium arsenide(GaAs), germanium (Ge), silicon-on-insulator (SOI), or any othersuitable materials.

First semiconductor structure 102 can include peripheral circuits 612 onsubstrate 610. In some implementations, peripheral circuits 612 includesa plurality of transistors 614 (e.g., planar transistors and/or 3Dtransistors). Trench isolations (e.g., shallow trench isolations (STIs))and doped regions (e.g., wells, sources, and drains of transistors 614)can be formed on or in substrate 610 as well.

In some implementations, first semiconductor structure 102 furtherincludes an interconnect layer 616 above peripheral circuits 612 totransfer electrical signals to and from peripheral circuits 612.Interconnect layer 616 can include a plurality of interconnects (alsoreferred to herein as “contacts”), including lateral interconnect linesand vertical interconnect access (VIA) contacts. As used herein, theterm “interconnects” can broadly include any suitable types ofinterconnects, such as middle-end-of-line (MEOL) interconnects andback-end-of-line (BEOL) interconnects. Interconnect layer 616 canfurther include one or more interlayer dielectric (ILD) layers (alsoknown as “intermetal dielectric (IMD) layers”) in which the interconnectlines and via contacts can form. That is, interconnect layer 616 caninclude interconnect lines and via contacts in multiple ILD layers. Insome implementations, peripheral circuits 612 are coupled to one anotherthrough the interconnects in interconnect layer 616. The interconnectsin interconnect layer 616 can include conductive materials including,but not limited to, W, Co, Cu, Al, doped silicon, silicides, or anycombination thereof. The ILD layers can be formed with dielectricmaterials including, but not limited to, silicon oxide, silicon nitride,silicon oxynitride, low-k dielectrics, or any combination thereof.

As shown in FIG. 6A, first semiconductor structure 102 can furtherinclude a bonding layer 618 at bonding interface 106 and aboveinterconnect layer 616 and peripheral circuits 612. Bonding layer 618can include a plurality of bonding contacts 619 and dielectricselectrically isolating bonding contacts 619. Bonding contacts 619 caninclude conductive materials, such as Cu. The remaining area of bondinglayer 618 can be formed with dielectric materials, such as siliconoxide. Bonding contacts 619 and surrounding dielectrics in bonding layer618 can be used for hybrid bonding. Similarly, as shown in FIG. 6A,second semiconductor structure 104 can also include a bonding layer 620at bonding interface 106 and above bonding layer 618 of firstsemiconductor structure 102. Bonding layer 620 can include a pluralityof bonding contacts 621 and dielectrics electrically isolating bondingcontacts 621. Bonding contacts 621 can include conductive materials,such as Cu. The remaining area of bonding layer 620 can be formed withdielectric materials, such as silicon oxide. Bonding contacts 621 andsurrounding dielectrics in bonding layer 620 can be used for hybridbonding. Bonding contacts 621 are in contact with bonding contacts 619at bonding interface 106, according to some implementations. In someimplementations, bonding layer 620 includes a dielectric layer opposingDRAM cells 624 with bit line 623 positioned between the dielectric layerand DRAM cells 624, as shown in FIG. 6A. The dielectric layer caninclude bonding interface 106 having bonding contacts 621.

Second semiconductor structure 104 can be bonded on top of firstsemiconductor structure 102 in a face-to-face manner at bondinginterface 106. In some implementations, bonding interface 106 isdisposed between bonding layers 620 and 618 as a result of hybridbonding (also known as “metal/dielectric hybrid bonding”), which is adirect bonding technology (e.g., forming bonding between surfaceswithout using intermediate layers, such as solder or adhesives) and canobtain metal-metal bonding and dielectric-dielectric bondingsimultaneously. In some implementations, bonding interface 106 is theplace at which bonding layers 620 and 618 are met and bonded. Inpractice, bonding interface 106 can be a layer with a certain thicknessthat includes the top surface of bonding layer 618 of firstsemiconductor structure 102 and the bottom surface of bonding layer 620of second semiconductor structure 104.

In some implementations, second semiconductor structure 104 furtherincludes an interconnect layer 622 including bit lines 623 above bondinglayer 620 to transfer electrical signals. Interconnect layer 622 caninclude a plurality of interconnects, such as MEOL interconnects andBEOL interconnects. In some implementations, the interconnects ininterconnect layer 622 also include local interconnects, such as bitlines 623 (e.g., an example of bit lines 506 in FIG. 5 ), bit linecontacts 625 (which may be omitted in some examples), and word linecontacts 627. Interconnect layer 622 can further include one or more ILDlayers in which the interconnect lines and via contacts can form. Theinterconnects in interconnect layer 622 can include conductive materialsincluding, but not limited to, W, Co, Cu, Al, doped silicon, silicides,or any combination thereof. The ILD layers can be formed with dielectricmaterials including, but not limited to, silicon oxide, silicon nitride,silicon oxynitride, low-k dielectrics, or any combination thereof. Insome implementations, peripheral circuits 612 includes a word linedriver/row decoder coupled to word line contacts 627 in interconnectlayer 622 through bonding contacts 621 and 619 in bonding layers 620 and618 and interconnect layer 616. In some implementations, peripheralcircuits 612 includes a bit line driver/column decoder coupled to bitlines 623 and bit line contacts 625 in interconnect layer 622 throughbonding contacts 621 and 619 in bonding layers 620 and 618 andinterconnect layer 616. In some implementations, bit line 623 is a metalbit line, as opposed to semiconductor bit lines (e.g., doped silicon bitlines). For example, bit line 623 may include W, Co, Cu, Al, or anyother suitable metals having higher conductivities than doped silicon.In some implementations, bit line contact 625 is an ohmic contact, suchas a metal silicide contact, as opposed to a Schottky contact. Forexample, bit line contact 625 may include metal silicides, such as WSi,CoSi, CuSi, AlSi, or any other suitable metal silicides having higherconductivities than doped silicon.

In some implementations, second semiconductor structure 104 includes aDRAM device in which memory cells are provided in the form of an arrayof DRAM cells 624 (e.g., an example of memory cells 502 in FIG. 5 )above interconnect layer 622 and bonding layer 620. That is,interconnect layer 622 including bit lines 623 can be disposed betweenbonding layer 620 and array of DRAM cells 624. It is understood that thecross-section of 3D memory device 600 in FIG. 6A may be made along thebit line direction (the y-direction), and one bit line 623 ininterconnect layer 622 extending laterally in the y-direction may becoupled to a column of DRAM cells 624.

Each DRAM cell 624 can include a vertical transistor 626 (e.g., anexample of vertical transistors 210 in FIG. 2 ) and capacitor 628 (e.g.,an example of storage unit 212 in FIG. 2 ) coupled to the verticaltransistor 626. DRAM cell 624 can be a 1T1C cell consisting of onetransistor and one capacitor. It is understood that DRAM cell 624 may beof any suitable configurations, such as 2T1C cell, 3T1C cell, etc.

Vertical transistor 626 can be a MOSFET used to switch a respective DRAMcell 624. In some implementations, vertical transistor 626 includes asemiconductor body 630 (the active region in which multiple channels canform) extending vertically (in the z-direction), and a gate structure636 in contact with a plurality of sides of semiconductor body 630. Asdescribed above, as in a GAA vertical transistor, semiconductor body 630can have a cuboid shape or a cylinder shape, and gate structure 636 canfully circumscribe semiconductor body 630 in the plan view, for example,as shown in FIG. 5 . Gate structure 636 includes a gate electrode 634and a gate dielectric 632 laterally between gate electrode 634 andsemiconductor body 630, according to some implementations. For example,for semiconductor body 630 having a cylinder shape, semiconductor body630, gate dielectric 632, and gate electrode 634 may be disposedradially from the center of vertical transistor 626 in this order. Insome implementations, gate dielectric 632 surrounds and contactssemiconductor body 630, and gate electrode 634 surrounds and contactsgate dielectric 632.

As shown in FIG. 6A, in some implementations, semiconductor body 630 hastwo ends (the upper end and lower end) in the vertical direction (thez-direction), and both ends extend beyond gate structure 636,respectively, in the vertical direction (the z-direction) into ILDlayers. That is, semiconductor body 630 can have a larger verticaldimension (e.g., the depth) than that of gate structure 636 (e.g., inthe z-direction), and neither the upper end nor the lower end ofsemiconductor body 630 is flush with the respective end of gatestructure 636. Thus, short circuits between bit lines 623 and wordlines/gate electrodes 634 or between word lines/gate electrodes 634 andcapacitors 628 can be avoided. In some implementations, the two ILDlayers into which semiconductor body 630 extends (e.g., the ILD layervertically between bit line contacts 625 and word lines 634, and the ILDlayer vertically between word lines 634 and capacitors 628) include thesame dielectric material, such as silicon oxide. Vertical transistor 626can further include a source and a drain (both referred to as 638 astheir locations may be interchangeable) disposed at the two ends (theupper end and lower end) of semiconductor body 630, respectively, in thevertical direction (the z-direction). In some implementations, one ofsource and drain 638 (e.g., at the upper end in FIG. 6A) is coupled tocapacitor 628, and the other one of source and drain 638 (e.g., at thelower end in FIG. 6A) is coupled to bit line 623 (e.g., through bit linecontact 625 or directly). That is, vertical transistor 626 can have afirst terminal in the positive z-direction and a second terminalopposite the first terminal in the negative z-direction, as shown inFIG. 6A. In some implementations, a metal bit line (e.g., bit line 623made of a metal material) is coupled to the second terminal of verticaltransistor 626 via an ohmic contact (e.g., bit line contact 625 made ofa metal silicide material).

In some implementations, semiconductor body 630 includes semiconductormaterials, such as single crystalline silicon, polysilicon, amorphoussilicon, Ge, any other semiconductor materials, or any combinationsthereof. In one example, semiconductor body 630 may include singlecrystalline silicon. Source and drain 638 can be doped with N-typedopants (e.g., P or As) or P-type dopants (e.g., B or Ga) at a desireddoping level. In some implementations, a silicide layer, such as a metalsilicide layer, is formed between source/drain 638 of verticaltransistor 626 and bit line 623 as bit line contact 625 or betweensource/drain 638 of vertical transistor 626 and the first electrode ofcapacitor 628 as capacitor contact 642 to reduce the contact resistance.In some implementations, gate dielectric 632 includes dielectricmaterials, such as silicon oxide, silicon nitride, or high-k dielectricsincluding, but not limited to, aluminum oxide (Al₂O₃), hafnium oxide(HfO₂), tantalum oxide (Ta₂O₅), zirconium oxide (ZrO₂), titanium oxide(TiO₂), or any combination thereof. In some implementations, gateelectrode 634 includes conductive materials including, but not limitedto W, Co, Cu, Al, TiN, TaN, polysilicon, silicides, or any combinationthereof. In some implementations, gate electrode 634 includes multipleconductive layers, such as a W layer over a TiN layer. In one example,gate structure 636 may be a “gate oxide/gate poly” gate in which gatedielectric 632 includes silicon oxide and gate electrode 634 includesdoped polysilicon. In another example, gate structure 636 may be ahigh-k metal gate (HKMG) in which gate dielectric 632 includes a high-kdielectric and gate electrode 634 includes a metal.

As described above, since gate electrode 634 may be part of a word lineor extend in the word line direction (e.g., the x-direction in FIG. 5 )as a word line, although not directly shown in FIG. 6A, secondsemiconductor structure 104 of 3D memory device 600 can also include aplurality of word lines (e.g., an example of word lines 504 in FIG. 5 ,referred to as 634 as well) each extending in the word line direction(the x-direction). Each word line 634 can be coupled to a row of DRAMcells 624. That is, bit line 623 and word line 634 can extend in twoperpendicular lateral directions, and semiconductor body 630 of verticaltransistor 626 can extend in the vertical direction perpendicular to thetwo lateral directions in which bit line 623 and word line 634 extend.Word lines 634 are in contact with word line contacts 627, according tosome implementations. In some implementations, word lines 634 includeconductive materials including, but not limited to W, Co, Cu, Al, TiN,TaN, polysilicon, silicides, or any combination thereof. In someimplementations, word line 634 includes multiple conductive layers, suchas a W layer over a TiN layer.

As shown in FIG. 6A, vertical transistor 626 extends vertically throughand contacts word lines 634, and source or drain 638 of verticaltransistor 626 at the lower end thereof is in contact with bit linecontact 625 or in contact with bit line 623 directly, according to someimplementations. Accordingly, word lines 634 and bit lines 623 can bedisposed in different planes in the vertical direction due to thevertical arrangement of vertical transistor 626, which simplifies therouting of word lines 634 and bit lines 623. In some implementations,bit lines 623 are disposed vertically between bonding layer 620 and wordlines 634, and word lines 634 are disposed vertically between bit lines623 and capacitors 628. Word lines 634 can be coupled to peripheralcircuits 612 in first semiconductor structure 102 through word linecontacts 627 in interconnect layer 622, bonding contacts 621 and 619 inbonding layers 620 and 618, and the interconnects in interconnect layer616. Similarly, bit lines 623 in interconnect layer 622 can be coupledto peripheral circuits 612 in first semiconductor structure 102 throughbonding contacts 621 and 619 in bonding layers 620 and 618 and theinterconnects in interconnect layer 616.

In some implementations, second semiconductor structure 104 furtherincludes a plurality of air gaps 640 each disposed laterally betweenadjacent word lines 634. Each air gap 640 can be a trench extending inthe word line direction (e.g., the x-direction) in parallel with wordlines 634 to separate adjacent rows of vertical transistors 626. Asdescribed below with respect to the fabrication process, air gaps 640may be formed due to the relatively small pitches of word lines 634 (androws of DRAM cells 624) in the bit line direction (e.g., they-direction). On the other hand, the relatively large dielectricconstant of air in air gaps 640 (e.g., about 4 times of the dielectricconstant of silicon oxide) can improve the insulation effect betweenword lines 634 (and rows of DRAM cells 624) compared with somedielectrics (e.g., silicon oxide).

As shown in FIG. 6A, in some implementations, capacitor 628 includes afirst electrode above and coupled to source or drain 638 of verticaltransistor 626, e.g., the upper end of semiconductor body 630, via acapacitor contact 642. In some implementations, capacitor contact 642 isan ohmic contact, such as a metal silicide contact, as opposed to aSchottky contact. For example, capacitor contact 642 may include metalsilicides, such as WSi, CoSi, CuSi, AlSi, or any other suitable metalsilicides having higher conductivities than doped silicon. Capacitor 628can also include a capacitor dielectric above and in contact with thefirst electrode, and a second electrode above and in contact with thecapacitor dielectric. That is, capacitor 628 can be a vertical capacitorin which the electrodes and capacitor dielectric are stacked vertically(in the z-direction), and the capacitor dielectric can be sandwichedbetween the electrodes. In some implementations, each first electrode iscoupled to source or drain 638 of a respective vertical transistor 626in the same DRAM cell, while all second electrodes are coupled to acommon plate 646 coupled to the ground, e.g., a common ground. Capacitor628 can have a first end in the negative z-direction and a second endopposite the first end in the positive z-direction, as shown in FIG. 6A.In some implementations, the first end of capacitor 628 is coupled tothe first terminal of vertical transistor 626 via an ohmic contact(e.g., capacitor contact 642 made of a metal silicide material). It isunderstood that in some examples, the capacitor contacts describedherein (e.g., 642, 1024, 1124, 1224, 1324, 1742, 2142, and 2228) may notbe included in the memory devices. As shown in FIG. 6A, secondsemiconductor structure 104 can further include a capacitor contact 647(e.g., a conductor) in contact with common plate 646 for couplingcapacitors 628 to peripheral circuits 612 or to the ground directly. Insome implementations, capacitor contact 647 (e.g., a conductor) extendsin the z-direction from the dielectric layer of bonding layer 620 tocouple to the second end of capacitor 628 via common plate 646, as shownin FIG. 6A. In some implementation, the ILD layer in which capacitors628 are formed has the same dielectric material as the two ILD layersinto which semiconductor body 630 extends, such as silicon oxide.

It is understood that the structure and configuration of capacitor 628are not limited to the example in FIG. 6A and may include any suitablestructure and configuration, such as a planar capacitor, a stackcapacitor, a multi-fins capacitor, a cylinder capacitor, a trenchcapacitor, or a substrate-plate capacitor. In some implementations, thecapacitor dielectric includes dielectric materials, such as siliconoxide, silicon nitride, or high-k dielectrics including, but not limitedto, Al₂O₃, HfO₂, Ta₂O₅, ZrO₂, TiO₂, or any combination thereof. It isunderstood that in some examples, capacitor 628 may be a ferroelectriccapacitor used in a FRAM cell, and the capacitor dielectric may bereplaced by a ferroelectric layer having ferroelectric materials, suchas lead zirconate titanate (PZT) or strontium bismuth tantalate (SBT).In some implementations, the electrodes include conductive materialsincluding, but not limited to W, Co, Cu, Al, TiN, TaN, polysilicon,silicides, or any combination thereof.

As shown in FIG. 6A, vertical transistor 626 extends vertically throughand contacts word lines 634, source or drain 638 of vertical transistor626 at the lower end thereof is in contact with bit line contact 625,and source or drain 638 of vertical transistor 626 at the upper endthereof is in contact with capacitor contact 642, according to someimplementations. That is, bit line 623 and capacitor 628 can be disposedin different planes in the vertical direction and coupled to oppositeends of vertical transistor 626 of DRAM cell 624 in the verticaldirection due to the vertical arrangement of vertical transistor 626. Insome implementations, bit line 623 and capacitor 628 are disposed onopposite sides of vertical transistor 626 in the vertical direction,which simplifies the routing of bit lines 623 and reduces the couplingcapacitance between bit lines 623 and capacitors 628 compared with DRAMcells in which the bit lines and capacitors are disposed on the sameside of the planar transistors.

As shown in FIG. 6A, in some implementations, vertical transistors 626are disposed vertically between capacitors 628 and bonding interface106. That is, vertical transistors 626 can be arranged closer toperipheral circuits 614 of first semiconductor structure 102 and bondinginterface 106 than capacitors 628. Since bit lines 623 and capacitors628 are coupled to opposite ends of vertical transistors 626, asdescribed above, bit lines 623 (as part of interconnect layer 622) aredisposed vertically between vertical transistors 626 and bondinginterface 106, according to some implementations. As a result,interconnect layer 622 including bit lines 623 can be arranged close tobonding interface 106 to reduce the interconnect routing distance andcomplexity.

In some implementations, second semiconductor structure 104 furtherincludes a substrate 648 disposed above DRAM cells 624. As describedbelow with respect to the fabrication process, substrate 648 can be partof a carrier wafer. It is understood that in some examples, substrate648 may not be included in second semiconductor structure 104.

As shown in FIG. 6A, second semiconductor structure 104 can furtherinclude a pad-out interconnect layer 650 above substrate 648 and DRAMcells 624. Pad-out interconnect layer 650 can include interconnects,e.g., contact pads 654, in one or more ILD layers. Pad-out interconnectlayer 650 and interconnect layer 622 can be formed on opposite sides ofDRAM cells 624. Capacitors 628 are disposed vertically between verticaltransistors 626 and pad-out interconnect layer 650, according to someimplementations. In some implementations, the interconnects in pad-outinterconnect layer 650 can transfer electrical signals between 3D memorydevice 600 and outside circuits, e.g., for pad-out purposes. In someimplementations, second semiconductor structure 104 further includes oneor more contacts 652 extending through substrate 648 and part of pad-outinterconnect layer 650 to couple pad-out interconnect layer 650 to DRAMcells 624 and interconnect layer 622. As a result, peripheral circuits612 can be coupled to DRAM cells 624 through interconnect layers 616 and622 as well as bonding layers 620 and 618, and peripheral circuits 612and DRAM cells 624 can be coupled to outside circuits through contacts652 and pad-out interconnect layer 650. Contact pads 654 and contacts652 can include conductive materials including, but not limited to, W,Co, Cu, Al, silicides, or any combination thereof. In one example,contact pad 654 may include Al, and contact 652 may include W. In someimplementations, contact 652 includes a via surrounded by a dielectricspacer (e.g., having silicon oxide) to electrically separate the viafrom substrate 648. Depending on the thickness of substrate 648, contact652 can be an interlayer via (ILV) having a depth in the submicron-level(e.g., between 10 nm and 1 μm), or a through substrate via (TSV) havinga depth in the micron- or tens micron-level (e.g., between 1 μm and 100μm).

It is understood that the pad-out of 3D memory devices is not limited tofrom second semiconductor structure 104 having DRAM cells 624 as shownin FIG. 6A and may be from first semiconductor structure 102 havingperipheral circuit 612. For example, as shown in FIG. 6B, a 3D memorydevice 601 may include pad-out interconnect layer 650 in firstsemiconductor structure 102. Pad-out interconnect layer 650 can bedisposed above and in contact with substrate 610 of first semiconductorstructure 102 on which transistors 614 of peripheral circuit 612 areformed. In some implementations, first semiconductor structure 102further includes one or more contacts 653 extending vertically throughsubstrate 610. In some implementations, contact 653 couples theinterconnects in interconnect layer 616 in first semiconductor structure102 to contact pads 654 in pad-out interconnect layer 650 to make anelectrical connection through substrate 610. Contacts 653 can includeconductive materials including, but not limited to, W, Co, Cu, Al,silicides, or any combination thereof. In one example, contact 653 mayinclude W. In some implementations, contact 653 includes a viasurrounded by a dielectric spacer (e.g., having silicon oxide) toelectrically separate the via from substrate 610. It is understood thatin some examples, substrate 610 in FIG. 6B may be a thinned substrate,e.g., compared with substrate 610 in FIG. 6A. Depending on the thicknessof substrate 610, contact 653 can be an ILV having a depth in thesubmicron-level (e.g., between 10 nm and 1 μm), or a TSV having a depthin the micron- or tens micron-level (e.g., between 1 μm and 100 μm). Itis understood that the details of the same components (e.g., materials,fabrication process, functions, etc.) in both 3D memory devices 600 and601 are not repeated for ease of description. Pad-out from firstsemiconductor structure 102 including peripheral circuits 612 can reducethe interconnect distance between contact pad 654 and peripheralcircuits 612, thereby decreasing the parasitic capacitance from theinterconnects and improving the electrical performance of 3D memorydevice 601.

It is also understood that the relative vertical positions between thesemiconductor body and the respective gate structure and word line arenot limited to the example shown in FIG. 6A in which both the upper andlower ends of semiconductor body 630 extend beyond gate structure 636(and word line 634), respectively, depending on the various fabricationprocesses as described below in detail. For example, as shown in FIG.6C, a 3D memory device 603 may include vertical transistors 626 eachhaving semiconductor body 630 and gate structure 636, and one end ofsemiconductor body 630 in the vertical direction (the z-direction) maybe flush with gate structure 636. In some implementations, the upper orlower end of semiconductor body 630 that is in contact with capacitorcontact 642 is flush with the respective end of gate structure 636 andword line 634. That is, one of the upper and lower ends of semiconductorbody 630 that is in contact with capacitor 628 does not extend beyondthe respective end of gate structure 636 and word line 634, according tosome implementations. In some implementations, as shown in FIG. 6C, theother end of semiconductor body 630 in the vertical direction that is incontact with bit line contact 625 still extends beyond the respectiveend of gate structure 636 and word line 634 into an ILD layer, which isvertically between bit line contacts 625 and word lines 634. It isunderstood that the details of the same components (e.g., materials,fabrication process, functions, etc.) in both 3D memory devices 600 and603 are not repeated for ease of description.

It is further understood that the dielectric materials of the ILD layersinto which the semiconductor bodies extend are not limited to theexample shown in FIG. 6A in which the ILD layers include silicon oxide,e.g., the same material as the ILD layer in which capacitors 628 areformed, depending on the various fabrication processes as describedbelow in detail. For example, as shown in FIG. 6D, a 3D memory device605 may include two ILD layers 660 and 662 into which semiconductor body630 extends. ILD layer 660 is vertically between bit line contacts 625and word lines 634, and ILD layer 662 is vertically between word lines634 and capacitor contact 642, according to some implementations. ILDlayers 660 and 662 can include a dielectric material that is differentfrom the dielectric material of the ILD layer in which capacitors 628are formed. In some implementations, ILD layers 660 and 662 includesilicon nitride, while the ILD layer of capacitors 628 includes siliconoxide. As shown in FIG. 6D, in some implementations, one end ofsemiconductor body 630 in the vertical direction (the z-direction) thatis in contact with capacitor 628 is flush with the respective end of ILDlayer 662. In some implementations, air gap 640 extends verticallythrough ILD layer 662 to separate ILD layer 662, but does not extendfurther into ILD layer 660, e.g., being stopped by ILD layer 660. It isunderstood that the details of the same components (e.g., materials,fabrication process, functions, etc.) in both 3D memory devices 600 and605 are not repeated for ease of description.

It is further understood that the air gaps between word lines may bepartially or fully filled with dielectrics. For example, as shown inFIG. 6E, a memory device 607 may not include air gaps (e.g., air gaps640 in FIG. 6A) between adjacent word lines 634. Instead, memory device607 can include dielectric wall structures 641 (e.g., filled withdielectrics, such as silicon oxide) each formed between adjacent wordlines 634. It is understood that in some examples (not shown), air gaps640 may still exist between word lines 634, but with a smaller verticaldimension (depth) compared with word liens 634. It is understood thatthe details of the same components (e.g., materials, fabricationprocess, functions, etc.) in both 3D memory devices 600 and 607 are notrepeated for ease of description.

It is further understood that more than one DRAM cell array may bestacked over one another to vertically scale up the number of DRAMcells. For example, as shown in FIG. 7 , a memory device 700 may furtherinclude a third semiconductor structure 702 having an array of DRAMcells 624 stacked over second and first semiconductor structures 104 and102. Third and second semiconductor structures 702 and 104 are jointedat another bonding interface 704 therebetween, according to someimplementations. Third and second semiconductor structures 702 and 104may have the same arrays of DRAM cells 624 and interconnect layers 622and thus, the details of DRAM cells 624 and interconnect layer 622 inthird semiconductor structure 702 are not repeated for ease ofdescription.

Third and second semiconductor structures 702 and 104 can be bonded in aface-to-face manner, such that at least some components (e.g., DRAMcells 624) in third and second semiconductor structures 702 and 104 canbe symmetric with respect bonding interface 704, according to someimplementations. Bonding interface 704 can be formed vertically betweenDRAM cells 624 in third semiconductor structure 702 and DRAM cells 624in second semiconductor structure 104. As shown in FIG. 7 , in someimplementations, capacitors 628 in second semiconductor structure 104are disposed vertically between bonding interface 704 and verticaltransistors 626 in second semiconductor structure 104, and capacitors628 in third semiconductor structure 702 are disposed vertically betweenbonding interface 704 and vertical transistors 626 in thirdsemiconductor structure 702. That is, capacitors 628 in secondsemiconductor structure 104 and capacitors 628 in third semiconductorstructure 702 can be disposed on opposite sides of bonding interface704. In some implementations, the second electrodes of capacitors 628 inthird semiconductor structure 702 are in contact with common plate 646at bonding interface 704.

In some implementations, 3D memory device 700 includes additionalinterconnects that couple DRAM cells 624 in third semiconductorstructure 702 to peripheral circuits 612 across bonding interfaces 704and 106, such as word line contacts 734 coupling word lines 634 in thirdsemiconductor structure 702 and peripheral circuits 612 in firstsemiconductor structure 102. As shown in FIG. 7 , third semiconductorstructure 702, as opposed to first or second semiconductor structure 102or 104, can include pad-out interconnect layer 650. In someimplementations, vertical transistors 626 in third semiconductorstructure 702 are disposed vertically between capacitors 628 in thirdsemiconductor structure 702 and pad-out interconnect layer 650. It isunderstood that the details of the same components (e.g., materials,fabrication process, functions, etc.) in both 3D memory devices 600 and700 are not repeated for ease of description.

It is understood that the architecture of multiple memory cell arraysshown in FIG. 7 is not limited to the design of DRAM cells 624 and maybe applied to any suitable memory cells disclosed herein. It is alsounderstood that various designs of memory cells disclosed herein may bemixed in the architecture of multiple memory cell arrays shown in FIG. 7. For example, second and third semiconductor structures 104 and 702 mayinclude different designs of memory cells disclosed herein.

It is further understood that the memory cell array is not limited tothe example shown in FIGS. 5, 6A-6D, and 7 in which the verticaltransistors are GAA transistors and may be any other suitable multi-gatevertical transistors. For example, FIG. 8 illustrates a plan view ofanother array of memory cells 802 each including a vertical transistorin a memory device 800, according to some aspects of the presentdisclosure. As shown in FIG. 8 , memory device 800 can include aplurality of word lines 804 each extending in a first lateral direction(the x-direction, referred to as the word line direction). Memory device800 can also include a plurality of bit lines 806 each extending in asecond lateral direction perpendicular to the first lateral direction(the y-direction, referred to as the bit line direction). It isunderstood that FIG. 8 does not illustrate a cross-section of memorydevice 800 in the same lateral plane, and word lines 804 and bit lines806 may be formed in different lateral planes for ease of routing asdescribed below in detail.

Memory cells 802 can be formed at the intersections of word lines 804and bit lines 806. In some implementations, each memory cell 802includes a vertical transistor (e.g., vertical transistor 210 in FIG. 2) having a semiconductor body 808 and a gate structure 810. The verticaltransistor of memory cell 802 in FIG. 8 may be an example of a tri-gatevertical transistor (e.g., tri-side gate vertical transistor).Semiconductor body 808 can extend in the vertical direction (thez-direction, not shown) perpendicular to the first and second lateraldirections. Gate structure 810 can be in contact with a plurality ofsides (e.g., three of all four sides in FIG. 8 ) of semiconductor body808 (the active region in which channels are formed). That is, differentfrom the GAA vertical transistor in memory cell 502 in FIG. 5 , gatestructure 810 of the vertical transistor in memory cell 802 partiallycircumscribes semiconductor body 808 in the plan view. That is, gatestructure 810 circumscribes (e.g., surrounding and contacting) three ofall four sides of semiconductor body 808 (having a rectangle orsquare-shaped cross-section) in the plan view, according to someimplementations. Gate structure 810 does not surround and contact atleast one side of semiconductor body 808, according to someimplementations. Gate structure 810 can include a gate dielectric 812partially or fully circumscribes semiconductor body 808 in the planview, and a gate electrode 814 partially circumscribes gate dielectric812. Thus, the vertical transistor having gate structure 810 may beviewed as a “tri-gate” vertical transistor in which gate structure 810is in contact with two opposite sides of semiconductor body 808 in theword line direction (the x-direction) and one side of semiconductor body808 in the bit line direction (the y-direction). As described above,gate electrode 814 may be part of word line 804, and word line 804 maybe an extension of gate electrode 814. For example, as shown in FIG. 8 ,one edge of each word line 804 may be formed aligned with the same sideof each semiconductor body 808, such that gate electrode 814 may notextend to the side of semiconductor body 808 to form a GAA transistor.By arranging semiconductor bodies 808 of memory cells 802 to be alignedwith one side of word lines 804, the pitch of word lines 804 and/or thepitch of memory cells 802 in the bit line direction (the y-direction)can be further increased to reduce the fabrication complexity andincrease the production yield. In some implementations, gate structures810 of a row of the vertical transistors are continuous in thex-direction, as a shown in FIG. 8 .

Similar to memory device 500 in FIG. 5 , as shown in FIG. 8 , gateelectrodes 814 of adjacent vertical transistors in the word linedirection (the x-direction) are continuous, e.g., parts of a continuousconductive layer having gate electrodes 814 and 804. In contrast, gatedielectrics 812 of adjacent vertical transistors in the word linedirection are separate, e.g., not parts of a continuous dielectric layerhaving gate dielectrics 812.

FIG. 9 illustrates a side view of a cross-section of a 3D memory device900 including vertical transistors, according to some aspects of thepresent disclosure. 3D memory device 900 may be one example of memorydevice 800 including multi-gate vertical transistors in which gatestructures partially circumscribes semiconductor bodies in the planview. 3D memory device 900 is similar to 3D memory device 600 in FIG. 6Aexcept for the different structures of multi-gate vertical transistorsin DRAM cells 624. It is understood that the details of the samecomponents (e.g., materials, fabrication process, functions, etc.) inboth 3D memory devices 600 and 900 are not repeated for ease ofdescription. Similar to FIG. 6A, the cross-section of 3D memory device900 in FIG. 9 may be made along the bit line direction (they-direction).

Vertical transistor 926 can be a MOSFET used to switch a respective DRAMcell 624. In some implementations, vertical transistor 926 includessemiconductor body 630 (the active region in which multiple channels canform) extending vertically (in the z-direction), and a gate structure936 in contact with a plurality of sides of semiconductor body 630.Semiconductor body 630 can have a cuboid shape or a cylinder shape, andgate structure 936 can partially circumscribe semiconductor body 630 inthe plan view, for example, as shown in FIG. 8 . As shown in FIG. 9 ,gate structure 936 does not extend to at least one side of semiconductorbody 630, according to some implementations. Gate structure 936 includesa gate electrode 934 and a gate dielectric 932 laterally between gateelectrode 934 and semiconductor body 630, according to someimplementations. As shown in FIG. 9 , gate electrode 934 does not extendto at least one side of semiconductor body 630, according to someimplementation. Due to the increased pitch of word lines 934 and/or thepitch of DRAM cells 624 in the bit line direction (they-direction), theair gaps between word lines 934 may be partially or fully filled withdielectrics.

It is also understood that the number of gates in multi-gate transistorsmay vary, e.g., not limited by the GAA vertical transistor example inFIG. 5 and the tri-gate vertical transistor example in FIG. 8 . Forexample, multi-gate vertical transistors may also include double-gatevertical transistors (a.k.a. dual-side gate vertical transistors) inwhich the gate structure is in contact with two sides of thesemiconductor body, such as the two opposite sides in the bit linedirection or in the word line direction.

It is further understood that although storage units are described ascapacitors 628 in FIGS. 6A-6D, 7, and 9 , storage units may include anyother suitable devices, such as PCM elements, as described above withrespect to FIG. 4 in some examples. For example, the capacitordielectric of capacitor 628 may be replaced with a phase-change materiallayer, such as chalcogenide alloys, vertically sandwiched between theelectrodes to form a PCM element. Also, instead of coupling source ordrain 638 of vertical transistor 626 or 926 to bit line 623, theelectrode of the PCM element may be coupled to bit line 623, whilesource or drain 638 of vertical transistor 626 or 926 may be coupled tothe ground, e.g., a common ground plate.

According to some aspects of the present disclosure, the verticaltransistors of memory cells in a memory device (e.g., memory device 200)are single-gate transistors, and the gate dielectrics of verticaltransistors in the word line direction are continuous. For example, FIG.16 illustrates a plan view of still another array of memory cells 1602each including a vertical transistor in a memory device 1600, accordingto some aspects of the present disclosure. As shown in FIG. 16 , memorydevice 1600 can include a plurality of word lines 1604 each extending ina first lateral direction (the x-direction, referred to as the word linedirection). Memory device 1600 can also include a plurality of bit lines1606 each extending in a second lateral direction perpendicular to thefirst lateral direction (the y-direction, referred to as the bit linedirection). It is understood that FIG. 16 does not illustrate across-section of memory device 1600 in the same lateral plane, and wordlines 1604 and bit lines 1606 may be formed in different lateral planesfor ease of routing as described below in detail.

Memory cells 1602 can be formed at the intersections of word lines 1604and bit lines 1606. In some implementations, each memory cell 1602includes a vertical transistor (e.g., vertical transistor 210 in FIG. 2) having a semiconductor body 1608 and a gate structure 1610.Semiconductor body 1608 can extend in a substrate in the verticaldirection (the z-direction, not shown) perpendicular to the first andsecond lateral directions. The vertical transistor can be a single-gatetransistor in which gate structure 1610 is in contact with a single side(e.g., one of four sides in FIG. 16 ) of semiconductor body 1608 (theactive region in which channels are formed). As shown in FIG. 16 , thevertical transistor is a single-gate transistor in which gate structure1610 abuts one side of semiconductor body 1608 (having a rectangle orsquare-shaped cross-section) in the bit line direction (the y-direction)in the plan view. Gate structure 1610 does not surround and contactother three sides of semiconductor body 1608, according to someimplementations. Gate structure 1610 can include a gate dielectric 1612abuts one side of semiconductor body 1608 in the plan view, and a gateelectrode 1614 in contact with gate dielectric 1612. In someimplementations, gate dielectric 1612 is laterally between gateelectrode 1614 and semiconductor body 1608 in the bit line direction(the y-direction). As described above, gate electrode 1614 may be partof word line 1604, and word line 1604 may be an extension of gateelectrode 1614. That is, gate electrodes 1614 of adjacent verticaltransistors in the word line direction (the x-direction) are continuous,e.g., parts of a continuous conductive layer having gate electrodes 1614and 1604. In some implementations, gate structures 1610 of a row of thevertical transistors are continuous in the x-direction, as a shown inFIG. 16 .

Different from separate gate dielectrics 512 and 812 in FIGS. 5 and 8 ,as shown in FIG. 16 , gate dielectrics 1612 of adjacent verticaltransistors in the word line direction are continuous, e.g., parts of acontinuous dielectric layer having gate dielectrics 1612 and extendingin the word line direction to abut vertical transistors in the same rowon the same side. Gate structures 1610 can be thus viewed as parts of acontinuous structure extending in the word line direction at which thecontinuous structure abut vertical transistors in the same row on thesame side.

As shown in FIG. 16 , two adjacent vertical transistors of memory cells(e.g., 1602A and 1602B) in the bit line direction (the y-direction) aremirror-symmetric to one another, according to some implementations. Asdescribed below with respect to the fabrication process, semiconductorbodies 1608 of each pair of two adjacent vertical transistors of memorycells (e.g., 1602A and 1602B) in the bit line direction (they-direction) can be formed by separating a semiconductor pillar into twopieces using a trench isolation 1616 extending in the word linedirection (the x-direction) and in parallel with word lines 1604. Trenchisolations 1616 and word lines 1604 can be disposed in an interleavedmanner in the bit line direction. In some implementations, trenchisolation 1616 is formed in the middle of the semiconductor pillars (notshown) such that the resulting pair of semiconductor bodies 1608 aremirror-symmetric to one another with respect to trench isolation 1616,so are the pair of vertical transistors having semiconductor bodies 1608when the respective gate structures 1610 are mirror-symmetric to oneanother with respect to trench isolation 1616 as well.

It is understood that in some examples, trench isolations 1616 extendingin the word line directions may not be formed such that two adjacentsemiconductor bodies 1608 separated by a respective trench isolation1616 may be merged as a single semiconductor body having two oppositesides in the bit line direction in contact with gate structure 1610.That is, without trench isolations 1616, the adjacent single-gatevertical transistors may be merged to form a double-gate verticaltransistor with increased gate control area and lower leakage current.The gate structure of the double-gate vertical transistor may includetwo mirror-symmetric gate structures 1610 in FIG. 16 , such that bothsides of the merged semiconductor body 1608 in the bit line directionmay be in contact with the gate structure in the double-gate verticaltransistor. On the other hand, by splitting the double-gate verticaltransistors into single-gate vertical transistors using trenchisolations 1616, the number of memory cells 1602 (and the cell density)in the bit line direction can be doubled compared to double-gatevertical transistors without unduly complexing the fabrication process(e.g., compared with using SADP process).

FIG. 17 illustrates a side view of a cross-section of yet another 3Dmemory device 1700 including vertical transistors, according to someaspects of the present disclosure. 3D memory device 1700 may be oneexample of memory device 1600 including single-gate vertical transistorsin which gate structures abut a single side of semiconductor bodies inthe plan view. It is understood that FIG. 17 is for illustrativepurposes only and may not necessarily reflect the actual devicestructure (e.g., interconnections) in practice. As one example of 3Dmemory device 100 described above with respect to FIG. 1A, 3D memorydevice 1700 is a bonded chip including first semiconductor structure 102and second semiconductor structure 104 stacked over first semiconductorstructure 102. First and second semiconductor structures 102 and 104 arejointed at bonding interface 106 therebetween, according to someimplementations. As shown in FIG. 17 , first semiconductor structure 102can include a substrate 1710, which can include silicon (e.g., singlecrystalline silicon, c-Si), SiGe, GaAs, Ge, SOI, or any other suitablematerials.

First semiconductor structure 102 can include peripheral circuits 1712on substrate 1710. In some implementations, peripheral circuits 1712include a plurality of transistors 1714 (e.g., planar transistors and/or3D transistors). Trench isolations (e.g., shallow trench isolations(STIs)) and doped regions (e.g., wells, sources, and drains oftransistors 1714) can be formed on or in substrate 1710 as well.

In some implementations, first semiconductor structure 102 furtherincludes an interconnect layer 1716 above peripheral circuits 1712 totransfer electrical signals to and from peripheral circuits 1712.Interconnect layer 1716 can include a plurality of interconnects (alsoreferred to herein as “contacts”), including lateral interconnect linesand VIA contacts. Interconnect layer 1716 can further include one ormore ILD layers in which the interconnect lines and via contacts canform. That is, interconnect layer 1716 can include interconnect linesand via contacts in multiple ILD layers. In some implementations,peripheral circuits 1712 are coupled to one another through theinterconnects in interconnect layer 1716. The interconnects ininterconnect layer 1716 can include conductive materials including, butnot limited to, W, Co, Cu, Al, doped silicon, silicides, or anycombination thereof. The ILD layers can be formed with dielectricmaterials including, but not limited to, silicon oxide, silicon nitride,silicon oxynitride, low-k dielectrics, or any combination thereof.

As shown in FIG. 17 , first semiconductor structure 102 can furtherinclude a bonding layer 1718 at bonding interface 106 and aboveinterconnect layer 1716 and peripheral circuits 1712. Bonding layer 1718can include a plurality of bonding contacts 1719 and dielectricselectrically isolating bonding contacts 1719. Bonding contacts 1719 caninclude conductive materials, such as Cu. The remaining area of bondinglayer 1718 can be formed with dielectric materials, such as siliconoxide. Bonding contacts 1719 and surrounding dielectrics in bondinglayer 1718 can be used for hybrid bonding. Similarly, as shown in FIG.17 , second semiconductor structure 104 can also include a bonding layer1720 at bonding interface 106 and above bonding layer 1718 of firstsemiconductor structure 102. Bonding layer 1720 can include a pluralityof bonding contacts 1721 and dielectrics electrically isolating bondingcontacts 1721. Bonding contacts 1721 can include conductive materials,such as Cu. The remaining area of bonding layer 1720 can be formed withdielectric materials, such as silicon oxide. Bonding contacts 1721 andsurrounding dielectrics in bonding layer 1720 can be used for hybridbonding. Bonding contacts 1721 are in contact with bonding contacts 1719at bonding interface 106, according to some implementations. In someimplementations, bonding layer 1720 includes a dielectric layer opposingDRAM cells 1724 with bit line 1723 positioned between the dielectriclayer and DRAM cells 1724, as shown in FIG. 17 . The dielectric layercan include bonding interface 106 having bonding contacts 1721.

Second semiconductor structure 104 can be bonded on top of firstsemiconductor structure 102 in a face-to-face manner at bondinginterface 106. In some implementations, bonding interface 106 isdisposed between bonding layers 1720 and 1718 as a result of hybridbonding (also known as “metal/dielectric hybrid bonding”), which is adirect bonding technology (e.g., forming bonding between surfaceswithout using intermediate layers, such as solder or adhesives) and canobtain metal-metal bonding and dielectric-dielectric bondingsimultaneously. In some implementations, bonding interface 106 is theplace at which bonding layers 1720 and 1718 are met and bonded. Inpractice, bonding interface 106 can be a layer with a certain thicknessthat includes the top surface of bonding layer 1718 of firstsemiconductor structure 102 and the bottom surface of bonding layer 1720of second semiconductor structure 104.

In some implementations, second semiconductor structure 104 furtherincludes an interconnect layer 1722 including bit lines 1723 abovebonding layer 1720 to transfer electrical signals. Interconnect layer1722 can include a plurality of interconnects, such as MEOLinterconnects and BEOL interconnects. In some implementations, theinterconnects in interconnect layer 1722 also include localinterconnects, such as bit lines 1723 (e.g., an example of bit lines1606 in FIG. 16 ) and word line contacts (not shown). Interconnect layer1722 can further include one or more ILD layers in which theinterconnect lines and via contacts can form. The interconnects ininterconnect layer 1722 can include conductive materials including, butnot limited to, W, Co, Cu, Al, doped silicon, silicides, or anycombination thereof. The ILD layers can be formed with dielectricmaterials including, but not limited to, silicon oxide, silicon nitride,silicon oxynitride, low-k dielectrics, or any combination thereof. Insome implementations, peripheral circuits 1712 include a word linedriver/row decoder coupled to the word line contacts in interconnectlayer 1722 through bonding contacts 1721 and 1719 in bonding layers 1720and 1718 and interconnect layer 1716. In some implementations,peripheral circuits 1712 include a bit line driver/column decodercoupled to bit lines 1723 and bit line contacts (not shown in FIG. 17 ,e.g., bit line contacts 625 in FIGS. 6A-6E) in interconnect layer 1722through bonding contacts 1721 and 1719 in bonding layers 1720 and 1718and interconnect layer 1716. In some implementations, bit line 1723 is ametal bit line, as opposed to semiconductor bit lines (e.g., dopedsilicon bit lines). For example, bit line 1723 may include W, Co, Cu,Al, or any other suitable metals having higher conductivities than dopedsilicon. In some implementations, the bit line contact (not shown inFIG. 17 , e.g., bit line contacts 625 in FIGS. 6A-6E) is an ohmiccontact, such as a metal silicide contact, as opposed to a Schottkycontact. For example, the bit line contact may include metal silicides,such as WSi, CoSi, CuSi, AlSi, or any other suitable metal silicideshaving higher conductivities than doped silicon.

In some implementations, second semiconductor structure 104 includes aDRAM device in which memory cells are provided in the form of an arrayof DRAM cells 1724 (e.g., an example of memory cells 1602 in FIG. 16 )above interconnect layer 1722 and bonding layer 1720. That is,interconnect layer 1722 including bit lines 1723 can be disposed betweenbonding layer 1720 and array of DRAM cells 1724. It is understood thatthe cross-section of 3D memory device 1700 in FIG. 17 may be made alongthe bit line direction (the y-direction), and one bit line 1723 ininterconnect layer 1722 extending laterally in the y-direction may becoupled to a column of DRAM cells 1724.

Each DRAM cell 1724 can include a vertical transistor 1726 (e.g., anexample of vertical transistors 210 in FIG. 2 ) and capacitor 1728(e.g., an example of storage unit 212 in FIG. 2 ) coupled to thevertical transistor 1726. DRAM cell 1724 can be a 1T1C cell consistingof one transistor and one capacitor. It is understood that DRAM cell1724 may be of any suitable configurations, such as 2T1C cell, 3T1Ccell, etc. To better illustrate vertical transistor 1726, FIG. 18illustrates a perspective view of an array of vertical transistor 1726,according to some aspects of the present disclosure. FIGS. 17 and 18will be described together when describing vertical transistors 1726.

Vertical transistor 1726 can be a MOSFET used to switch a respectiveDRAM cell 1724. In some implementations, vertical transistor 1726includes a semiconductor body 1730 (the active region in which a channelcan form) extending vertically (in the z-direction), and a gatestructure 1736 in contact with one side of semiconductor body 1730 inthe bit line direction (they-direction). As described above, as in asingle-gate vertical transistor, semiconductor body 1730 can have acuboid shape or a cylinder shape, and gate structure 1736 can abut asingle side of semiconductor body 1730 in the plan view, for example, asshown in FIGS. 17 and 18 . Gate structure 1736 includes a gate electrode1734 and a gate dielectric 1732 laterally between gate electrode 1734and semiconductor body 1730 in the bit line direction, according to someimplementations. In some implementations, gate dielectric 1732 abuts oneside of semiconductor body 1730, and gate electrode 1734 abuts gatedielectric 1732.

As shown in FIGS. 17 and 18 , in some implementations, semiconductorbody 1730 has two ends (the upper end and lower end) in the verticaldirection (the z-direction), and at least one end (e.g., the lower endin FIGS. 17 and 18 ) extends beyond gate dielectric 1732 in the verticaldirection (the z-direction) into ILD layers. In some implementations,one end (e.g., the upper end in FIGS. 17 and 18 ) of semiconductor body1730 is flush with the respective end (e.g., the upper end in FIGS. 17and 18 ) of gate dielectric 1732. In some implementations, both ends(the upper end and lower end) of semiconductor body 1730 extend beyondgate electrode 1734, respectively, in the vertical direction (thez-direction) into ILD layers. That is, semiconductor body 1730 can havea larger vertical dimension (e.g., the depth) than that of gateelectrode 1734 (e.g., in the z-direction), and neither the upper end northe lower end of semiconductor body 1730 is flush with the respectiveend of gate electrode 1734. Thus, short circuits between bit lines 1723and word lines/gate electrodes 1734 or between word lines/gateelectrodes 1734 and capacitors 1728 can be avoided. Vertical transistor1726 can further include a source and a drain (both referred to as 1738as their locations may be interchangeable) disposed at the two ends (theupper end and lower end) of semiconductor body 1730, respectively, inthe vertical direction (the z-direction). In some implementations, oneof source and drain 1738 (e.g., at the upper end in FIGS. 17 and 18 ) iscoupled to capacitor 1728, and the other one of source and drain 1738(e.g., at the lower end in FIGS. 17 and 18 ) is coupled to bit line1723. That is, vertical transistor 1726 can have a first terminal in thepositive z-direction and a second terminal opposite the first terminalin the negative z-direction, as shown in FIG. 17 . In someimplementations, a metal bit line (e.g., bit line 1723 made of a metalmaterial) is coupled to the second terminal of vertical transistor 1726via an ohmic contact (e.g., a bit line contact made of a metal silicidematerial).

In some implementations, semiconductor body 1730 includes semiconductormaterials, such as single crystalline silicon, polysilicon, amorphoussilicon, Ge, any other semiconductor materials, or any combinationsthereof. In one example, semiconductor body 1730 may include singlecrystalline silicon. Source and drain 1738 can be doped with N-typedopants (e.g., P or As) or P-type dopants (e.g., B or Ga) at a desireddoping level. In some implementations, a silicide layer, such as a metalsilicide layer, is formed between source/drain 1738 of verticaltransistor 1726 and bit line 1723 as the bit line contact or betweensource/drain 1738 of vertical transistor 1726 and the first electrode ofcapacitor 1728 as capacitor contact 1742 to reduce the contactresistance. In some implementations, gate dielectric 1732 includesdielectric materials, such as silicon oxide, silicon nitride, or high-kdielectrics including, but not limited to, Al₂O₃, HfO₂, Ta₂O₅, ZrO₂,TiO₂, or any combination thereof. In some implementations, gateelectrode 1734 includes conductive materials including, but not limitedto W, Co, Cu, Al, TiN, TaN, polysilicon, silicides, or any combinationthereof. In some implementations, gate electrode 1734 includes multipleconductive layers, such as a W layer over a TiN layer, as shown in FIGS.17 and 18 . In one example, gate structure 1736 may be a “gateoxide/gate poly” gate in which gate dielectric 1732 includes siliconoxide and gate electrode 1734 includes doped polysilicon. In anotherexample, gate structure 1736 may be an HKMG in which gate dielectric1732 includes a high-k dielectric and gate electrode 1734 includes ametal.

As described above, since gate electrode 1734 may be part of a word lineor extend in the word line direction (e.g., the x-direction in FIG. 18 )as a word line, as shown in FIG. 18 , second semiconductor structure 104of 3D memory device 1700 can also include a plurality of word lines(e.g., an example of word lines 1604 in FIG. 16 , referred to as 1734 aswell) each extending in the word line direction (the x-direction). Eachword line 1734 can be coupled to a row of DRAM cells 1724. That is, bitline 1723 and word line 1734 can extend in two perpendicular lateraldirections, and semiconductor body 1730 of vertical transistor 1726 canextend in the vertical direction perpendicular to the two lateraldirections in which bit line 1723 and word line 1734 extend. Word lines1734 are in contact with word line contacts (not shown), according tosome implementations. In some implementations, word lines 1734 includeconductive materials including, but not limited to W, Co, Cu, Al, TiN,TaN, polysilicon, silicides, or any combination thereof. In someimplementations, word line 1734 includes multiple conductive layers,such as a W layer over a TiN layer, as shown in FIG. 17 .

As shown in FIGS. 17 and 18 , vertical transistor 1726 extendsvertically through and contacts word lines 1734, and source or drain1738 of vertical transistor 1726 at the lower end thereof is in contactwith bit line 1723 (or bit line contact if any), according to someimplementations. Accordingly, word lines 1734 and bit lines 1723 can bedisposed in different planes in the vertical direction due to thevertical arrangement of vertical transistor 1726, which simplifies therouting of word lines 1734 and bit lines 1723. In some implementations,bit lines 1723 are disposed vertically between bonding layer 1720 andword lines 1734, and word lines 1734 are disposed vertically between bitlines 1723 and capacitors 1728. Word lines 1734 can be coupled toperipheral circuits 1712 in first semiconductor structure 102 throughword line contacts (not shown) in interconnect layer 1722, bondingcontacts 1721 and 1719 in bonding layers 1720 and 1718, and theinterconnects in interconnect layer 1716. Similarly, bit lines 1723 ininterconnect layer 1722 can be coupled to peripheral circuits 1712 infirst semiconductor structure 102 through bonding contacts 1721 and 1719in bonding layers 1720 and 1718 and the interconnects in interconnectlayer 1716.

As described above with respect to FIG. 16 , vertical transistors 1726can be arranged in a mirror-symmetric manner to increase the density ofDRAM cells 1724 in the bit line direction (the y-direction). As shown inFIG. 17 , two adjacent vertical transistors 1726 in the bit linedirection are mirror-symmetric to one another with respect to a trenchisolation 1760 (e.g., corresponding to trench isolation 1616 in FIG. 16), according to some implementations. That is, second semiconductorstructure 104 can include a plurality of trench isolations 1760 eachextending in the word line direction (the x-direction) in parallel withword lines 1734 and disposed between semiconductor bodies 1730 of twoadjacent rows of vertical transistors 1726. In some implementations, therows of vertical transistors 1726 separated by trench isolation 1760 aremirror-symmetric to one another with respect to trench isolation 1760.Trench isolation 1760 can be formed with dielectric materials including,but not limited to, silicon oxide, silicon nitride, silicon oxynitride,low-k dielectrics, or any combination thereof. It is understood thattrench isolation 1760 may include an air gap each disposed laterallybetween adjacent semiconductor bodies 1730. As described below withrespect to the fabrication process, air gaps may be formed due to therelatively small pitches of vertical transistors 1726 in the bit linedirection (e.g., the y-direction). On the other hand, the relativelylarge dielectric constant of air in air gaps (e.g., about 4 times of thedielectric constant of silicon oxide) can improve the insulation effectbetween vertical transistors 1726 (and rows of DRAM cells 1724) comparedwith some dielectrics (e.g., silicon oxide). Similarly, in someimplementations, air gaps are formed laterally between word lines/gateelectrodes 1734 in the bit line direction as well, depending on thepitches of word lines/gate electrodes 1734 in the bit line direction.

As shown in FIG. 17 , in some implementations, capacitor 1728 includes afirst electrode above and coupled to source or drain 1738 of verticaltransistor 1726, e.g., the upper end of semiconductor body 1730, via acapacitor contact 1742. In some implementations, capacitor contact 1742is an ohmic contact, such as a metal silicide contact, as opposed to aSchottky contact. For example, capacitor contact 1742 may include metalsilicides, such as WSi, CoSi, CuSi, AlSi, or any other suitable metalsilicides having higher conductivities than doped silicon. Capacitor1728 can also include a capacitor dielectric above and in contact withthe first electrode, and a second electrode above and in contact withthe capacitor dielectric. That is, capacitor 1728 can be a verticalcapacitor in which the electrodes and capacitor dielectric are stackedvertically (in the z-direction), and the capacitor dielectric can besandwiched between the electrodes. In some implementations, each firstelectrode is coupled to source or drain 1738 of a respective verticaltransistor 1726 in the same DRAM cell, while all second electrodes arecoupled to a common plate 1746 coupled to the ground, e.g., a commonground. Capacitor 1728 can have a first end in the negative z-directionand a second end opposite the first end in the positive z-direction, asshown in FIG. 17 . In some implementations, the first end of capacitor1728 is coupled to the first terminal of vertical transistor 1726 via anohmic contact (e.g., capacitor contact 1742 made of a metal silicidematerial). As shown in FIG. 17 , second semiconductor structure 104 canfurther include a capacitor contact 1747 (e.g., a conductor) in contactwith common plate 1746 for coupling capacitors 1728 to peripheralcircuits 1712 or to the ground directly. In some implementations,capacitor contact 1747 (e.g., a conductor) extends in the z-directionfrom the dielectric layer of bonding layer 1720 to couple to the secondend of capacitor 1728 via common plate 1746, as shown in FIG. 17 . Insome implementation, the ILD layer in which capacitors 1728 are formedhas the same dielectric material as the two ILD layers into whichsemiconductor body 1730 extends, such as silicon oxide.

It is understood that the structure and configuration of capacitor 1728are not limited to the example in FIG. 17 and may include any suitablestructure and configuration, such as a planar capacitor, a stackcapacitor, a multi-fins capacitor, a cylinder capacitor, a trenchcapacitor, or a substrate-plate capacitor. In some implementations, thecapacitor dielectric includes dielectric materials, such as siliconoxide, silicon nitride, or high-k dielectrics including, but not limitedto, Al₂O₃, HfO₂, Ta₂O₅, ZrO₂, TiO₂, or any combination thereof. It isunderstood that in some examples, capacitor 1728 may be a ferroelectriccapacitor used in a FRAM cell, and the capacitor dielectric may bereplaced by a ferroelectric layer having ferroelectric materials, suchas PZT or SBT. In some implementations, the electrodes includeconductive materials including, but not limited to W, Co, Cu, Al, TiN,TaN, polysilicon, silicides, or any combination thereof.

As shown in FIG. 17 , vertical transistor 1726 extends verticallythrough and contacts word lines 1734, source or drain 1738 of verticaltransistor 1726 at the lower end thereof is in contact with bit line1723, and source or drain 1738 of vertical transistor 1726 at the upperend thereof is coupled to capacitor 1728, according to someimplementations. That is, bit line 1723 and capacitor 1728 can bedisposed in different planes in the vertical direction and coupled toopposite ends of vertical transistor 1726 of DRAM cell 1724 in thevertical direction due to the vertical arrangement of verticaltransistor 1726. In some implementations, bit line 1723 and capacitor1728 are disposed on opposite sides of vertical transistor 1726 in thevertical direction, which simplifies the routing of bit lines 1723 andreduces the coupling capacitance between bit lines 1723 and capacitors1728 compared with DRAM cells in which the bit lines and capacitors aredisposed on the same side of the planar transistors.

As shown in FIG. 17 , in some implementations, vertical transistors 1726are disposed vertically between capacitors 1728 and bonding interface106. That is, vertical transistors 1726 can be arranged closer toperipheral circuits 1714 of first semiconductor structure 102 andbonding interface 106 than capacitors 1728. Since bit lines 1723 andcapacitors 1728 are coupled to opposite ends of vertical transistors1726, as described above, bit lines 1723 (as part of interconnect layer1722) are disposed vertically between vertical transistors 1726 andbonding interface 106, according to some implementations. As a result,interconnect layer 1722 including bit lines 1723 can be arranged closeto bonding interface 106 to reduce the interconnect routing distance andcomplexity.

In some implementations, second semiconductor structure 104 furtherincludes a substrate 1748 disposed above DRAM cells 1724. As describedbelow with respect to the fabrication process, substrate 1748 can bepart of a carrier wafer. It is understood that in some examples,substrate 1748 may not be included in second semiconductor structure104.

As shown in FIG. 17 , second semiconductor structure 104 can furtherinclude a pad-out interconnect layer 1750 above substrate 1748 and DRAMcells 1724. Pad-out interconnect layer 1750 can include interconnects,e.g., contact pads 1754, in one or more ILD layers. Pad-out interconnectlayer 1750 and interconnect layer 1722 can be formed on opposite sidesof DRAM cells 1724. Capacitors 1728 are disposed vertically betweenvertical transistors 1726 and pad-out interconnect layer 1750, accordingto some implementations. In some implementations, the interconnects inpad-out interconnect layer 1750 can transfer electrical signals between3D memory device 1700 and outside circuits, e.g., for pad-out purposes.In some implementations, second semiconductor structure 104 furtherincludes one or more contacts 1752 extending through substrate 1748 andpart of pad-out interconnect layer 1750 to couple pad-out interconnectlayer 1750 to DRAM cells 1724 and interconnect layer 1722. As a result,peripheral circuits 1712 can be coupled to DRAM cells 1724 throughinterconnect layers 1716 and 1722 as well as bonding layers 1720 and1718, and peripheral circuits 1712 and DRAM cells 1724 can be coupled tooutside circuits through contacts 1752 and pad-out interconnect layer1750. Contact pads 1754 and contacts 1752 can include conductivematerials including, but not limited to, W, Co, Cu, Al, silicides, orany combination thereof. In one example, contact pad 1754 may includeAl, and contact 1752 may include W. In some implementations, contact1752 includes a via surrounded by a dielectric spacer (e.g., havingsilicon oxide) to electrically separate the via from substrate 1748.Depending on the thickness of substrate 1748, contact 1752 can be an ILVhaving a depth in the submicron-level (e.g., between 10 nm and 1 μm), ora TSV having a depth in the micron- or tens micron-level (e.g., between1 μm and 100 μm).

Although not shown, it is understood that the pad-out of 3D memorydevices is not limited to from second semiconductor structure 104 havingDRAM cells 1724 as shown in FIG. 17 and may be from first semiconductorstructure 102 having peripheral circuit 1712 in the similar manner asdescribed above with respect to FIG. 6B. Although not shown, it is alsounderstood that the air gaps between word lines 1734 and/or betweensemiconductor bodies 1730 may be partially or fully filled withdielectrics in the similar manner as described above with respect toFIG. 6E. Although not shown, it is further understood that more than onearray of DRAM cells 1724 may be stacked over one another to verticallyscale up the number of DRAM cells 1724 in the similar manner asdescribed above with respect to FIG. 7 .

As described above, in some examples, trench isolations 1616 extendingin the word line directions in FIG. 16 may not be formed such that twoadjacent semiconductor bodies 1608 separated by a respective trenchisolation 1616 may be merged as a single semiconductor body having twoopposite sides in the bit line direction in contact with gate structure1610. That is, without trench isolations 1616, the adjacent single-gatevertical transistors may be merged to form a double-gate verticaltransistor (e.g., dual-side gate vertical transistor) with increasedgate control area and lower leakage current. For example, FIG. 20illustrates a plan view of yet another array of memory cells 2002 eachincluding a vertical transistor in a memory device 2000, according tosome aspects of the present disclosure. As shown in FIG. 20 , memorydevice 2000 can include a plurality of word lines 2004 each extending ina first lateral direction (the x-direction, referred to as the word linedirection). Memory device 2000 can also include a plurality of bit lines2006 each extending in a second lateral direction perpendicular to thefirst lateral direction (the y-direction, referred to as the bit linedirection). It is understood that FIG. 20 does not illustrate across-section of memory device 2000 in the same lateral plane, and wordlines 2004 and bit lines 2006 may be formed in different lateral planesfor ease of routing as described below in detail.

Memory cells 2002 can be formed at the intersections of word lines 2004and bit lines 2006. In some implementations, each memory cell 2002includes a vertical transistor (e.g., vertical transistor 210 in FIG. 2) having a semiconductor body 2008 and a gate structure 2010.Semiconductor body 2008 can extend in a substrate in the verticaldirection (the z-direction, not shown) perpendicular to the first andsecond lateral directions. The vertical transistor can be a double-gatetransistor in which gate structure 2010 is in contact with two sides(e.g., two of four sides in FIG. 20 ) of semiconductor body 2008 (theactive region in which channels are formed). As shown in FIG. 20 , thevertical transistor is a double-gate transistor in which gate structure2010 abuts two opposite sides of semiconductor body 1608 (having arectangle or square-shaped cross-section) in the bit line direction (they-direction) in the plan view. Gate structure 2010 does not surround andcontact the other two sides of semiconductor body 2008 in the word linedirection (the x-direction), according to some implementations. That is,gate structure 2010 can partially circumscribes semiconductor body 2008in the plan view. Gate structure 2010 can include a gate dielectric 2012abuts two opposite sides of semiconductor body 2008 in the plan view,and a gate electrode 2014 in contact with gate dielectric 2012. In someimplementations, gate dielectric 2012 is laterally between gateelectrode 2014 and semiconductor body 2008 in the bit line direction(the y-direction). As described above, gate electrode 2014 may be partof word line 2004, and word line 2004 may be an extension of gateelectrode 2014. That is, gate electrodes 1614 of adjacent verticaltransistors in the word line direction (the x-direction) are continuous,e.g., parts of a continuous conductive layer having gate electrodes 1614and 1604. In some implementations, gate structures 2010 of a row of thevertical transistors are continuous in the x-direction, as a shown inFIG. 20 .

Different from separate gate dielectrics 512 and 812 in FIGS. 5 and 8 ,as shown in FIG. 20 , gate dielectrics 2012 of adjacent verticaltransistors in the word line direction are continuous, e.g., parts of acontinuous dielectric layer having gate dielectrics 2012 and extendingin the word line direction. Gate structures 2010 can be thus viewed asparts of a continuous structure extending in the word line direction atwhich the continuous structure intersects vertical transistors in thesame row.

FIG. 21 illustrates a side view of a cross-section of yet another 3Dmemory device 2100 including vertical transistors, according to someaspects of the present disclosure. 3D memory device 2100 may be oneexample of memory device 2000 including double-gate vertical transistorsin which gate structures abut two sides of semiconductor bodies in theplan view. It is understood that FIG. 21 is for illustrative purposesonly and may not necessarily reflect the actual device structure (e.g.,interconnections) in practice. As one example of 3D memory device 100described above with respect to FIG. 1A, 3D memory device 2100 is abonded chip including first semiconductor structure 102 and secondsemiconductor structure 104 stacked over first semiconductor structure102. First and second semiconductor structures 102 and 104 are jointedat bonding interface 106 therebetween, according to someimplementations. As shown in FIG. 21 , first semiconductor structure 102can include a substrate 2110, which can include silicon (e.g., singlecrystalline silicon, c-Si), SiGe, GaAs, Ge, SOI, or any other suitablematerials.

First semiconductor structure 102 can include peripheral circuits 2112on substrate 2110. In some implementations, peripheral circuits 2112include a plurality of transistors 2114 (e.g., planar transistors and/or3D transistors). Trench isolations (e.g., shallow trench isolations(STIs)) and doped regions (e.g., wells, sources, and drains oftransistors 2114) can be formed on or in substrate 2110 as well.

In some implementations, first semiconductor structure 102 furtherincludes an interconnect layer 2116 above peripheral circuits 2112 totransfer electrical signals to and from peripheral circuits 2112.Interconnect layer 2116 can include a plurality of interconnects (alsoreferred to herein as “contacts”), including lateral interconnect linesand VIA contacts. Interconnect layer 1716 can further include one ormore ILD layers in which the interconnect lines and via contacts canform. That is, interconnect layer 2116 can include interconnect linesand via contacts in multiple ILD layers. In some implementations,peripheral circuits 2112 are coupled to one another through theinterconnects in interconnect layer 2116. The interconnects ininterconnect layer 2116 can include conductive materials including, butnot limited to, W, Co, Cu, Al, doped silicon, silicides, or anycombination thereof. The ILD layers can be formed with dielectricmaterials including, but not limited to, silicon oxide, silicon nitride,silicon oxynitride, low-k dielectrics, or any combination thereof.

As shown in FIG. 21 , first semiconductor structure 102 can furtherinclude a bonding layer 2118 at bonding interface 106 and aboveinterconnect layer 2116 and peripheral circuits 2112. Bonding layer 2118can include a plurality of bonding contacts 2119 and dielectricselectrically isolating bonding contacts 2119. Bonding contacts 2119 caninclude conductive materials, such as Cu. The remaining area of bondinglayer 2118 can be formed with dielectric materials, such as siliconoxide. Bonding contacts 2119 and surrounding dielectrics in bondinglayer 2118 can be used for hybrid bonding. Similarly, as shown in FIG.21 , second semiconductor structure 104 can also include a bonding layer2120 at bonding interface 106 and above bonding layer 2118 of firstsemiconductor structure 102. Bonding layer 2120 can include a pluralityof bonding contacts 2121 and dielectrics electrically isolating bondingcontacts 2121. Bonding contacts 2121 can include conductive materials,such as Cu. The remaining area of bonding layer 2120 can be formed withdielectric materials, such as silicon oxide. Bonding contacts 2121 andsurrounding dielectrics in bonding layer 2120 can be used for hybridbonding. Bonding contacts 2121 are in contact with bonding contacts 2119at bonding interface 106, according to some implementations. In someimplementations, bonding layer 2120 includes a dielectric layer opposingDRAM cells 2124 with bit line 2123 positioned between the dielectriclayer and DRAM cells 2124, as shown in FIG. 21 . The dielectric layercan include bonding interface 106 having bonding contacts 2121.

Second semiconductor structure 104 can be bonded on top of firstsemiconductor structure 102 in a face-to-face manner at bondinginterface 106. In some implementations, bonding interface 106 isdisposed between bonding layers 2120 and 2118 as a result of hybridbonding (also known as “metal/dielectric hybrid bonding”), which is adirect bonding technology (e.g., forming bonding between surfaceswithout using intermediate layers, such as solder or adhesives) and canobtain metal-metal bonding and dielectric-dielectric bondingsimultaneously. In some implementations, bonding interface 106 is theplace at which bonding layers 2120 and 2118 are met and bonded. Inpractice, bonding interface 106 can be a layer with a certain thicknessthat includes the top surface of bonding layer 2118 of firstsemiconductor structure 102 and the bottom surface of bonding layer 2120of second semiconductor structure 104.

In some implementations, second semiconductor structure 104 furtherincludes an interconnect layer 2122 including bit lines 2123 abovebonding layer 2120 to transfer electrical signals. Interconnect layer2122 can include a plurality of interconnects, such as MEOLinterconnects and BEOL interconnects. In some implementations, theinterconnects in interconnect layer 2122 also include localinterconnects, such as bit lines 2123 (e.g., an example of bit lines2006 in FIG. 20 ) and word line contacts (not shown). Interconnect layer2122 can further include one or more ILD layers in which theinterconnect lines and via contacts can form. The interconnects ininterconnect layer 2122 can include conductive materials including, butnot limited to, W, Co, Cu, Al, doped silicon, silicides, or anycombination thereof. The ILD layers can be formed with dielectricmaterials including, but not limited to, silicon oxide, silicon nitride,silicon oxynitride, low-k dielectrics, or any combination thereof. Insome implementations, peripheral circuits 2112 include a word linedriver/row decoder coupled to the word line contacts in interconnectlayer 2122 through bonding contacts 2121 and 2119 in bonding layers 2120and 2118 and interconnect layer 2116. In some implementations,peripheral circuits 2112 include a bit line driver/column decodercoupled to bit lines 2123 and the bit line contacts in interconnectlayer 2122 through bonding contacts 2121 and 2119 in bonding layers 2120and 2118 and interconnect layer 2116. In some implementations, bit line2123 is a metal bit line, as opposed to semiconductor bit lines (e.g.,doped silicon bit lines). For example, bit line 2123 may include W, Co,Cu, Al, or any other suitable metals having higher conductivities thandoped silicon. In some implementations, the bit line contact is an ohmiccontact, such as a metal silicide contact, as opposed to a Schottkycontact. For example, the bit line contact may include metal silicides,such as WSi, CoSi, CuSi, AlSi, or any other suitable metal silicideshaving higher conductivities than doped silicon.

In some implementations, second semiconductor structure 104 includes aDRAM device in which memory cells are provided in the form of an arrayof DRAM cells 2124 (e.g., an example of memory cells 2002 in FIG. 20 )above interconnect layer 2122 and bonding layer 2120. That is,interconnect layer 2122 including bit lines 2123 can be disposed betweenbonding layer 2120 and array of DRAM cells 2124. It is understood thatthe cross-section of 3D memory device 2100 in FIG. 21 may be made alongthe bit line direction (the y-direction), and one bit line 2123 ininterconnect layer 2122 extending laterally in the y-direction may becoupled to a column of DRAM cells 2124.

Each DRAM cell 2124 can include a vertical transistor 2126 (e.g., anexample of vertical transistors 210 in FIG. 2 ) and capacitor 2128(e.g., an example of storage unit 212 in FIG. 2 ) coupled to thevertical transistor 2126. DRAM cell 2124 can be a 1T1C cell consistingof one transistor and one capacitor. It is understood that DRAM cell2124 may be of any suitable configurations, such as 2T1C cell, 3T1Ccell, etc.

Vertical transistor 2126 can be a MOSFET used to switch a respectiveDRAM cell 2124. In some implementations, vertical transistor 2126includes a semiconductor body 2130 (the active region in which channelscan form) extending vertically (in the z-direction), and a gatestructure 2136 in contact with two opposite sides of semiconductor body2130 in the bit line direction (the y-direction). As described above, asin a double-gate vertical transistor, semiconductor body 2130 can have acuboid shape or a cylinder shape, and gate structure 2136 can abut twosides of semiconductor body 2130 in the plan view, for example, as shownin FIG. 21 . Gate structure 2136 includes a gate electrode 2134 and agate dielectric 2132 laterally between gate electrode 2134 andsemiconductor body 2130 in the bit line direction, according to someimplementations. In some implementations, gate dielectric 2132 abuts twosides of semiconductor body 2130, and gate electrode 2134 abuts gatedielectric 2132.

As shown in FIG. 21 , in some implementations, semiconductor body 2130has two ends (the upper end and lower end) in the vertical direction(the z-direction), and at least one end (e.g., the lower end in FIG. 21) extends beyond gate dielectric 2132 in the vertical direction (thez-direction) into ILD layers. In some implementations, one end (e.g.,the upper end in FIG. 21 ) of semiconductor body 2130 is flush with therespective end (e.g., the upper end in FIG. 21 ) of gate dielectric2132. In some implementations, both ends (the upper end and lower end)of semiconductor body 2130 extend beyond gate electrode 2134,respectively, in the vertical direction (the z-direction) into ILDlayers. That is, semiconductor body 2130 can have a larger verticaldimension (e.g., the depth) than that of gate electrode 2134 (e.g., inthe z-direction), and neither the upper end nor the lower end ofsemiconductor body 2130 is flush with the respective end of gateelectrode 2134. Thus, short circuits between bit lines 2123 and wordlines/gate electrodes 2134 or between word lines/gate electrodes 2134and capacitors 2128 can be avoided. Vertical transistor 2126 can furtherinclude a source and a drain (both referred to as 2138 as theirlocations may be interchangeable) disposed at the two ends (the upperend and lower end) of semiconductor body 2130, respectively, in thevertical direction (the z-direction). In some implementations, one ofsource and drain 2138 (e.g., at the upper end in FIG. 21 ) is coupled tocapacitor 2128, and the other one of source and drain 2138 (e.g., at thelower end in FIG. 21 ) is coupled to bit line 2123. That is, verticaltransistor 2126 can have a first terminal in the positive z-directionand a second terminal opposite the first terminal in the negativez-direction, as shown in FIG. 21 . In some implementations, a metal bitline (e.g., bit line 2123 made of a metal material) is coupled to thesecond terminal of vertical transistor 2126 via an ohmic contact (e.g.,a bit line contact made of a metal silicide material).

In some implementations, semiconductor body 2130 includes semiconductormaterials, such as single crystalline silicon, polysilicon, amorphoussilicon, Ge, any other semiconductor materials, or any combinationsthereof. In one example, semiconductor body 2130 may include singlecrystalline silicon. Source and drain 2138 can be doped with N-typedopants (e.g., P or As) or P-type dopants (e.g., B or Ga) at a desireddoping level. In some implementations, a silicide layer, such as a metalsilicide layer, is formed between source/drain 2138 of verticaltransistor 2126 and bit line 2123 as the bit line contact or betweensource/drain 1738 of vertical transistor 2126 and the first electrode ofcapacitor 2128 as capacitor contact 2142 to reduce the contactresistance. In some implementations, gate dielectric 2132 includesdielectric materials, such as silicon oxide, silicon nitride, or high-kdielectrics including, but not limited to, Al₂O₃, HfO₂, Ta₂O₅, ZrO₂,TiO₂, or any combination thereof. In some implementations, gateelectrode 2134 includes conductive materials including, but not limitedto W, Co, Cu, Al, TiN, TaN, polysilicon, silicides, or any combinationthereof. In some implementations, gate electrode 2134 includes multipleconductive layers, such as a W layer over a TiN layer. In one example,gate structure 2136 may be a “gate oxide/gate poly” gate in which gatedielectric 2132 includes silicon oxide and gate electrode 2134 includesdoped polysilicon. In another example, gate structure 2136 may be anHKMG in which gate dielectric 2132 includes a high-k dielectric and gateelectrode 2134 includes a metal.

As described above, since gate electrode 2134 may be part of a word lineor extend in the word line direction as a word line, secondsemiconductor structure 104 of 3D memory device 2100 can also include aplurality of word lines (e.g., an example of word lines 2004 in FIG. 20, referred to as 2134 as well) each extending in the word linedirection. Each word line 2134 can be coupled to a row of DRAM cells2124. That is, bit line 2123 and word line 2134 can extend in twoperpendicular lateral directions, and semiconductor body 2130 ofvertical transistor 2126 can extend in the vertical directionperpendicular to the two lateral directions in which bit line 2123 andword line 2134 extend. Word lines 2134 are in contact with word linecontacts (not shown), according to some implementations. In someimplementations, word lines 2134 include conductive materials including,but not limited to W, Co, Cu, Al, TiN, TaN, polysilicon, silicides, orany combination thereof. In some implementations, word line 2134includes multiple conductive layers, such as a W layer over a TiN layer.

As shown in FIG. 21 , vertical transistor 2126 extends verticallythrough and contacts word lines 2134, and source or drain 2138 ofvertical transistor 2126 at the lower end thereof is in contact with bitline 2123 (or bit line contact if any), according to someimplementations. Accordingly, word lines 2134 and bit lines 2123 can bedisposed in different planes in the vertical direction due to thevertical arrangement of vertical transistor 2126, which simplifies therouting of word lines 2134 and bit lines 2123. In some implementations,bit lines 2123 are disposed vertically between bonding layer 2120 andword lines 2134, and word lines 2134 are disposed vertically between bitlines 2123 and capacitors 2128. Word lines 2134 can be coupled toperipheral circuits 2112 in first semiconductor structure 102 throughword line contacts in interconnect layer 2122, bonding contacts 2121 and2119 in bonding layers 2120 and 2118, and the interconnects ininterconnect layer 2116. Similarly, bit lines 2123 in interconnect layer2122 can be coupled to peripheral circuits 2112 in first semiconductorstructure 102 through bonding contacts 2121 and 2119 in bonding layers2120 and 2118 and the interconnects in interconnect layer 2116.

In some implementations, second semiconductor structure 104 furtherincludes a plurality of air gaps 2140 each disposed laterally betweenadjacent word lines 2134. Each air gap 2140 can be a trench extending inthe word line direction (e.g., the x-direction) in parallel with wordlines 2134 to separate adjacent rows of vertical transistors 2126. Asdescribed below with respect to the fabrication process, air gaps 2140may be formed due to the relatively small pitches of word lines 2134(and rows of DRAM cells 2124) in the bit line direction (e.g., they-direction). On the other hand, the relatively large dielectricconstant of air in air gaps 2140 (e.g., about 4 times of the dielectricconstant of silicon oxide) can improve the insulation effect betweenword lines 2134 (and rows of DRAM cells 2124) compared with somedielectrics (e.g., silicon oxide).

As shown in FIG. 21 , in some implementations, capacitor 2128 includes afirst electrode above and coupled to source or drain 2138 of verticaltransistor 2126, e.g., the upper end of semiconductor body 2130, via acapacitor contact 2142. In some implementations, capacitor contact 2142is an ohmic contact, such as a metal silicide contact, as opposed to aSchottky contact. For example, capacitor contact 2142 may include metalsilicides, such as WSi, CoSi, CuSi, AlSi, or any other suitable metalsilicides having higher conductivities than doped silicon. Capacitor2128 can also include a capacitor dielectric above and in contact withthe first electrode, and a second electrode above and in contact withthe capacitor dielectric. That is, capacitor 2128 can be a verticalcapacitor in which the electrodes and capacitor dielectric are stackedvertically (in the z-direction), and the capacitor dielectric can besandwiched between the electrodes. In some implementations, each firstelectrode is coupled to source or drain 2138 of a respective verticaltransistor 2126 in the same DRAM cell, while all second electrodes arecoupled to a common plate 2146 coupled to the ground, e.g., a commonground. Capacitor 2128 can have a first end in the negative z-directionand a second end opposite the first end in the positive z-direction, asshown in FIG. 21 . In some implementations, the first end of capacitor2128 is coupled to the first terminal of vertical transistor 2126 via anohmic contact (e.g., capacitor contact 2142 made of a metal silicidematerial). As shown in FIG. 21 , second semiconductor structure 104 canfurther include a capacitor contact 2147 (e.g., a conductor) in contactwith common plate 2146 for coupling capacitors 2128 to peripheralcircuits 2112 or to the ground directly. In some implementations,capacitor contact 2147 (e.g., a conductor) extends in the z-directionfrom the dielectric layer of bonding layer 2120 to couple to the secondend of capacitor 2128 via common plate 2146, as shown in FIG. 21 . Insome implementation, the ILD layer in which capacitors 2128 are formedhas the same dielectric material as the two ILD layers into whichsemiconductor body 2130 extends, such as silicon oxide.

It is understood that the structure and configuration of capacitor 2128are not limited to the example in FIG. 21 and may include any suitablestructure and configuration, such as a planar capacitor, a stackcapacitor, a multi-fins capacitor, a cylinder capacitor, a trenchcapacitor, or a substrate-plate capacitor. In some implementations, thecapacitor dielectric includes dielectric materials, such as siliconoxide, silicon nitride, or high-k dielectrics including, but not limitedto, Al₂O₃, HfO₂, Ta₂O₅, ZrO₂, TiO₂, or any combination thereof. It isunderstood that in some examples, capacitor 2128 may be a ferroelectriccapacitor used in a FRAM cell, and the capacitor dielectric may bereplaced by a ferroelectric layer having ferroelectric materials, suchas PZT or SBT. In some implementations, the electrodes includeconductive materials including, but not limited to W, Co, Cu, Al, TiN,TaN, polysilicon, silicides, or any combination thereof.

As shown in FIG. 21 , vertical transistor 2126 extends verticallythrough and contacts word lines 2134, source or drain 2138 of verticaltransistor 2126 at the lower end thereof is in contact with bit line2123 directly or through the bit line contact, and source or drain 2138of vertical transistor 2126 at the upper end thereof is coupled tocapacitor 2128, according to some implementations. That is, bit line2123 and capacitor 2128 can be disposed in different planes in thevertical direction and coupled to opposite ends of vertical transistor2126 of DRAM cell 2124 in the vertical direction due to the verticalarrangement of vertical transistor 2126. In some implementations, bitline 2123 and capacitor 2128 are disposed on opposite sides of verticaltransistor 2126 in the vertical direction, which simplifies the routingof bit lines 2123 and reduces the coupling capacitance between bit lines2123 and capacitors 2128 compared with DRAM cells in which the bit linesand capacitors are disposed on the same side of the planar transistors.

As shown in FIG. 21 , in some implementations, vertical transistors 2126are disposed vertically between capacitors 2128 and bonding interface106. That is, vertical transistors 2126 can be arranged closer toperipheral circuits 2114 of first semiconductor structure 102 andbonding interface 106 than capacitors 2128. Since bit lines 2123 andcapacitors 2128 are coupled to opposite ends of vertical transistors2126, as described above, bit lines 2123 (as part of interconnect layer2122) are disposed vertically between vertical transistors 2126 andbonding interface 106, according to some implementations. As a result,interconnect layer 2122 including bit lines 2123 can be arranged closeto bonding interface 106 to reduce the interconnect routing distance andcomplexity.

In some implementations, second semiconductor structure 104 furtherincludes a substrate 2148 disposed above DRAM cells 2124. As describedbelow with respect to the fabrication process, substrate 2148 can bepart of a carrier wafer. It is understood that in some examples,substrate 2148 may not be included in second semiconductor structure104.

As shown in FIG. 21 , second semiconductor structure 104 can furtherinclude a pad-out interconnect layer 2150 above substrate 2148 and DRAMcells 2124. Pad-out interconnect layer 2150 can include interconnects,e.g., contact pads 2154, in one or more ILD layers. Pad-out interconnectlayer 2150 and interconnect layer 2122 can be formed on opposite sidesof DRAM cells 2124. Capacitors 2128 are disposed vertically betweenvertical transistors 2126 and pad-out interconnect layer 2150, accordingto some implementations. In some implementations, the interconnects inpad-out interconnect layer 2150 can transfer electrical signals between3D memory device 2100 and outside circuits, e.g., for pad-out purposes.In some implementations, second semiconductor structure 104 furtherincludes one or more contacts 2152 extending through substrate 2148 andpart of pad-out interconnect layer 2150 to couple pad-out interconnectlayer 2150 to DRAM cells 2124 and interconnect layer 2122. As a result,peripheral circuits 2112 can be coupled to DRAM cells 2124 throughinterconnect layers 2116 and 2122 as well as bonding layers 2120 and2118, and peripheral circuits 2112 and DRAM cells 2124 can be coupled tooutside circuits through contacts 2152 and pad-out interconnect layer2150. Contact pads 2154 and contacts 2152 can include conductivematerials including, but not limited to, W, Co, Cu, Al, silicides, orany combination thereof. In one example, contact pad 2154 may includeAl, and contact 2152 may include W. In some implementations, contact2152 includes a via surrounded by a dielectric spacer (e.g., havingsilicon oxide) to electrically separate the via from substrate 2148.Depending on the thickness of substrate 2148, contact 2152 can be an ILVhaving a depth in the submicron-level (e.g., between 10 nm and 1 μm), ora TSV having a depth in the micron- or tens micron-level (e.g., between1 μm and 100 μm).

Although not shown, it is understood that the pad-out of 3D memorydevices is not limited to from second semiconductor structure 104 havingDRAM cells 2124 as shown in FIG. 21 and may be from first semiconductorstructure 102 having peripheral circuit 2112 in the similar manner asdescribed above with respect to FIG. 6B. Although not shown, it is alsounderstood that the air gaps between word lines 2134 may be partially orfully filled with dielectrics in the similar manner as described abovewith respect to FIG. 6E. Although not shown, it is further understoodthat more than one array of DRAM cells 2124 may be stacked over oneanother to vertically scale up the number of DRAM cells 2124 in thesimilar manner as described above with respect to FIG. 7 .

FIG. 27 illustrates a block diagram of a system 2700 having a memorydevice, according to some aspects of the present disclosure. System 2700can be a mobile phone, a desktop computer, a laptop computer, a tablet,a vehicle computer, a gaming console, a printer, a positioning device, awearable electronic device, a smart sensor, a virtual reality (VR)device, an argument reality (AR) device, or any other suitableelectronic devices having storage therein. As shown in FIG. 27 , system2700 can include a host 2708 and a memory system 2702 having one or morememory devices 2704 and a memory controller 2706. Host 2708 can be aprocessor of an electronic device, such as a central processing unit(CPU), or a system-on-chip (SoC), such as an application processor (AP).Host 2708 can be configured to send or receive the data to or frommemory devices 2704.

Memory device 2704 can be any memory devices disclosed herein, such as3D memory devices 100 and 101, memory devices 200, 500, 800, 1600, and2000, and 3D memory devices 600, 601, 603, 605, 607, 700, 900, 1700, and2100. In some implementations, memory device 2704 includes an array ofmemory cells each including a vertical transistor, as described above indetail.

Memory controller 2706 is coupled to memory device 2704 and host 2708and is configured to control memory device 2704, according to someimplementations. Memory controller 2706 can manage the data stored inmemory device 2704 and communicate with host 2708. Memory controller2706 can be configured to control operations of memory device 2704, suchas read, write, and refresh operations. Memory controller 2706 can alsobe configured to manage various functions with respect to the datastored or to be stored in memory device 2704 including, but not limitedto refresh and timing control, command/request translation, buffer andschedule, and power management. In some implementations, memorycontroller 2706 is further configured to determines the maximum memorycapacity that the computer system can use, the number of memory banks,memory type and speed, memory particle data depth and data width, andother important parameters. Any other suitable functions may beperformed by memory controller 2706 as well. Memory controller 2706 cancommunicate with an external device (e.g., host 2708) according to aparticular communication protocol. For example, memory controller 2706may communicate with the external device through at least one of variousinterface protocols, such as a USB protocol, an MMC protocol, aperipheral component interconnection (PCI) protocol, a PCI-express(PCI-E) protocol, an advanced technology attachment (ATA) protocol, aserial-ATA protocol, a parallel-ATA protocol, a small computer smallinterface (SCSI) protocol, an enhanced small disk interface (ESDI)protocol, an integrated drive electronics (IDE) protocol, a Firewireprotocol, etc.

FIGS. 10A-10M illustrate a fabrication process for forming a 3D memorydevice including vertical transistors, according to some aspects of thepresent disclosure. FIGS. 11A-11I illustrate a fabrication process forforming another 3D memory device including vertical transistors,according to some aspects of the present disclosure. FIGS. 12A-12Hillustrate a fabrication process for forming still another 3D memorydevice including vertical transistors, according to some aspects of thepresent disclosure. FIGS. 13A-13H illustrate a fabrication process forforming yet another 3D memory device including vertical transistors,according to some aspects of the present disclosure. FIGS. 14A-14Eillustrate a fabrication process for forming yet another 3D memorydevice including vertical transistors, according to some aspects of thepresent disclosure. FIGS. 15A-15D illustrate a fabrication process forforming yet another 3D memory device including vertical transistors,according to some aspects of the present disclosure. FIGS. 19A-19Millustrate a fabrication process for forming yet another 3D memorydevice including vertical transistors, according to some aspects of thepresent disclosure. FIGS. 22A-22M illustrate a fabrication process forforming yet another 3D memory device including vertical transistors,according to some aspects of the present disclosure. FIG. 23 illustratesa flowchart of a method 2300 for forming a 3D memory device includingvertical transistors, according to some aspects of the presentdisclosure. Examples of the 3D memory devices depicted in FIGS. 10A-10Minclude 3D memory devices 600 and 601 depicted in FIGS. 6A and 6B.Examples of the 3D memory devices depicted in FIGS. 11A-11I include 3Dmemory device 900 depicted in FIG. 9 . Examples of the 3D memory devicesdepicted in FIGS. 12A-12H include 3D memory device 603 depicted in FIG.6C. Examples of the 3D memory devices depicted in FIGS. 13A-13H include3D memory device 605 depicted in FIG. 6D. Examples of the 3D memorydevices depicted in FIGS. 14A-14E and 15A-15D include 3D memory device700 depicted in FIG. 7 . Examples of the 3D memory devices depicted inFIGS. 19A-19M include 3D memory device 1700 depicted in FIG. 17 .Examples of the 3D memory devices depicted in FIGS. 22A-22M include 3Dmemory device 2100 depicted in FIG. 21 . FIGS. 10A-10M, 11A-11I,12A-12H, 13A-13H, 14A-14E, 15A-15D, 19A-19M, 22A-22M, and 23 will bedescribed together. It is understood that the operations shown in method2300 are not exhaustive and that other operations can be performed aswell before, after, or between any of the illustrated operations.Further, some of the operations may be performed simultaneously, or in adifferent order than shown in FIG. 2300 .

In some implementations, a first semiconductor structure including aperipheral circuit is formed. As depicted in FIG. 10L or 19L, a firstsemiconductor structure including peripheral circuits is formed. In someimplementations, a second semiconductor structure including a firstarray of memory cells and a plurality of bit lines coupled to the memorycells is formed. Each of the memory cells can include a verticaltransistor, and a storage unit coupled to the vertical transistor. Arespective one of the bit lines and a respective storage unit arecoupled to opposite ends of each one of the memory cells vertically. Asdepicted in FIG. 10L, 11I, 12H, 13H, 19L, or 22L, a second semiconductorstructure including an array of DRAM cells, each of which includes avertical transistor, and a capacitor coupled to the vertical transistor,is formed. The second semiconductor structure also includes a pluralityof bit lines coupled to the memory cells, and a respective one of thebit lines and a respective storage unit are coupled to opposite ends ofeach one of the memory cells vertically. In some implementations, thefirst semiconductor structure and the second semiconductor structure arebonded in a face-to-face manner, such that the first array of memorycells is coupled to the peripheral circuit across a bonding interface.As depicted in FIGS. 10L and 10M, 19L, or 22L, the first and secondsemiconductor structures are bonded in a face-to-face manner, such thatthe array of DRAM cells is coupled to the peripheral circuit across abonding interface.

Referring to FIG. 23 , method 2300 starts at operation 2302, in which aperipheral circuit is formed on a first substrate. The first substratecan include a silicon substrate. In some implementations, aninterconnect layer is formed above the peripheral circuit. Theinterconnect layer can include a plurality of interconnects in one ormore ILD layers.

As illustrated in FIG. 10L, a plurality of transistors 1042 are formedon a silicon substrate 1038. Transistors 1042 can be formed by aplurality of processes including, but not limited to, photolithography,dry/wet etch, thin film deposition, thermal growth, implantation,chemical mechanical polishing (CMP), and any other suitable processes.In some implementations, doped regions are formed in silicon substrate1038 by ion implantation and/or thermal diffusion, which function, forexample, as the source and drain of transistors 1042. In someimplementations, isolation regions (e.g., STIs) are also formed insilicon substrate 1038 by wet/dry etch and thin film deposition.Transistors 1042 can form peripheral circuits 1040 on silicon substrate1038.

As illustrated in FIG. 10L, an interconnect layer 1044 can be formedabove peripheral circuits 1040 having transistors 1042. Interconnectlayer 1044 can include interconnects of MEOL and/or BEOL in a pluralityof ILD layers to make electrical connections with peripheral circuits1040. In some implementations, interconnect layer 1044 includes multipleILD layers and interconnects therein formed in multiple processes. Forexample, the interconnects in interconnect layers 1044 can includeconductive materials deposited by one or more thin film depositionprocesses including, but not limited to, chemical vapor deposition(CVD), physical vapor deposition (PVD), atomic layer deposition (ALD),electroplating, electroless plating, or any combination thereof.Fabrication processes to form the interconnects can also includephotolithography, CMP, wet/dry etch, or any other suitable processes.The ILD layers can include dielectric materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, or any combination thereof. The ILD layers and interconnectsillustrated in FIG. 10L can be collectively referred to as interconnectlayer 1044.

Method 2300 proceeds to operation 2304, as illustrated in FIG. 23 , inwhich a first bonding layer is formed above the peripheral circuit (andthe interconnect layer). The first bonding layer can include a firstbonding contact. As illustrated in FIG. 10L, a bonding layer 1046 isformed above interconnect layer 1044 and peripheral circuits 1040.Bonding layer 1046 can include a plurality of bonding contacts 1047surrounded by dielectrics. In some implementations, a dielectric layer(e.g., ILD layer) is deposited on the top surface of interconnect layer1044 by one or more thin film deposition processes including, but notlimited to, CVD, PVD, ALD, or any combination thereof. Bonding contacts1047 then can be formed through the dielectric layer and in contact withthe interconnects in interconnect layer 1044 by first patterning contactholes through the dielectric layer using patterning process (e.g.,photolithography and dry/wet etch of dielectric materials in thedielectric layer). The contact holes can be filled with a conductor(e.g., Cu). In some implementations, filling the contact holes includesdepositing a barrier layer, an adhesion layer, and/or a seed layerbefore depositing the conductor.

Method 2300 proceeds to operation 2306, as illustrated in FIG. 23 , inwhich an array of memory cells each including a vertical transistor anda storage unit is formed on a second substrate. The second substrate caninclude a carrier substrate. The storage unit can include a capacitor ora PCM element. In some implementations, a capacitor is formed to becoupled to the vertical transistor in the respective memory cell.

For example, FIG. 24 illustrates a flowchart of a method 2400 forforming an array of memory cells each including a vertical transistor,according to some aspects of the present disclosure. At operation 2402in FIG. 24 , a stack of dielectric layers is formed on a substrate. Insome implementations, to form the stack of dielectric layers, threelayers having a first dielectric, a second dielectric, and the firstdielectric, respectively, are subsequently deposited on the substrate.The first dielectric can include silicon oxide, and the seconddielectric can include silicon nitride. The layer having the seconddielectric can act as a sacrificial layer sandwiched vertically betweentwo layers having the first dielectric. The sacrificial layer can beremoved by selectively etching against the two layers having the firstdielectric and replaced with a conductive layer in the later processes.

As illustrated in FIG. 10A, a stack of a silicon oxide layer 1004, asilicon nitride layer 1006, and a silicon oxide layer 1008 is formed ona silicon substrate 1002. To form the dielectric stack, silicon oxide,silicon nitride, and silicon oxide are subsequently deposited ontosilicon substrate 1002 using one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof. In some implementations, silicon oxide layer 1004 is formed byoxidizing the top portion of silicon substrate 1002 using dry oxidationand/or we oxidation, such as in situ steam generation (ISSG) oxidationprocess. In some implementations, the thickness of silicon oxide layer1004 (e.g., ISSG silicon oxide) is smaller than the thickness of siliconoxide layer 1008 (e.g., CVD silicon oxide). FIG. 10A illustrates boththe side view (in the top portion of FIG. 10A) of a cross-section alongthe y-direction (the bit line direction, e.g., in the CC plane) and theplan view (in the bottom portion of FIG. 10A) of a cross-section in thex-y plane (e.g., in the AA plane through silicon nitride layer 1006).The same drawing layout is arranged in FIGS. 10B-10G as well.

At operation 2404 in FIG. 24 , a semiconductor body extending verticallyfrom the substrate through the stack of dielectric layers is formed. Insome implementations, to form the semiconductor body, an openingextending through the stack of dielectric layers is etched to exposepart of the substrate, and the semiconductor body is epitaxially grownfrom the exposed part of the substrate in the opening.

As illustrated in FIG. 10B, an array of openings 1010 is formed, each ofwhich extends vertically (in the z-direction) through the stack ofsilicon oxide layer 1008, silicon nitride layer 1006, and silicon oxidelayer 1004 to silicon substrate 1002. As a result, parts of siliconsubstrate 1002 can be exposed from openings 1010. In someimplementations, a lithography process is performed to pattern the arrayof openings 1010 using an etch mask (e.g., a photoresist mask), forexample, based on the design of word lines and bit lines, and one ormore dry etching and/or wet etching processes, such as reactive ion etch(RIE), are performed to etch openings 1010 through silicon oxide layer1008, silicon nitride layer 1006, and silicon oxide layer 1004 untilbeing stopped by silicon substrate 1002.

As illustrated in FIG. 10C, an array of semiconductor bodies 1012 areformed in openings 1010. Semiconductor body 1012 can be epitaxiallygrown from the respective exposed part of silicon substrate 1002 in therespective opening 1010. The fabrication processes for epitaxiallygrowing semiconductor body 1012 can include, but not limited to,vapor-phase epitaxy (VPE), liquid-phase epitaxy (LPE), molecular-beamepitaxy (MPE), or any combinations thereof. The epitaxy can occur upward(toward the positive z-direction) from the exposed parts of siliconsubstrate 1002 in openings 1010. Semiconductor body 1012 thus can havethe same material as silicon substrate 1002, in the form of singlecrystalline silicon. Depending on the shape of opening 1010,semiconductor body 1012 can have the same shape as opening 1010, such asa cuboid shape or a cylinder shape. In some implementations, aplanarization process, such as CMP, is performed to remove excess partsof semiconductor bodies 1012 beyond the top surface of silicon oxidelayer 1008. As a result, an array of semiconductor bodies 1012 (e.g.,single crystalline silicon bodies) extending vertically (in thez-direction) from silicon substrate 1002 through the stack of siliconoxide layer 1008, silicon nitride layer 1006, and silicon oxide layer1004 is formed thereby, according to some implementations.

At operation 2406 in FIG. 24 , one of the stack of dielectric layers isremoved to expose part of the semiconductor body. In someimplementations, to remove the one of the stack of dielectric layers, atrench is etched through at least part of the stack of dielectric layersto expose the layer having the second dielectric, and the layer havingthe second dielectric (e.g., the sacrificial layer) is etched away viathe trench. In some implementations, the trench is etched betweenadjacent rows of semiconductor bodies without touching any sides of thesemiconductor bodies.

As illustrated in FIG. 10D, a plurality of trenches 1014 (slitsopenings) each extending laterally along the word line direction (thex-direction) and extending vertically through at least silicon oxidelayer 1008 and silicon nitride layer 1006 are formed to expose siliconnitride layer 1006. As a result, parts of silicon nitride layer 1006 canbe exposed from trenches 1014. In some implementations, a lithographyprocess is performed to pattern trenches 1014 using an etch mask (e.g.,a photoresist mask), for example, based on the design of word lines(word line trenches). As shown in FIG. 10D, trench 1014 is patterned tobe formed between adjacent rows of semiconductor bodies 1012 withouttouching any sides of semiconductor bodies 1012, such that semiconductorbodies 1012 are not exposed from any side thereof. In one example,trench 1014 is patterned to be formed in the middle between adjacentrows of semiconductor bodies 1012, e.g., having the same distance twoadjacent rows of semiconductor bodies 1012. In some implementations, oneor more dry etching and/or wet etching processes, such as RIE, areperformed to etch trenches 1014 through silicon oxide layer 1008,silicon nitride layer 1006, and silicon oxide layer 1004 until beingstopped by silicon substrate 1002. It is understood that in someexamples, the etching of trenches 1014 may not go all the way to siliconsubstrate 1002 and may be stopped at silicon oxide layer 1004 so long assilicon nitride layer 1006 is exposed from trenches 1014.

As illustrated in FIG. 10E, silicon nitride layer 1006 (shown in FIG.10D) is removed to expose parts of semiconductor bodies 1012 abuttingsilicon nitride layer 1006. In some implementations, silicon nitridelayer 1006 is etched away via trenches 1014. For example, a wet etchantincluding phosphoric acid may be applied through trenches 1014 toselectively wet etch silicon nitride layer 1006 without etching siliconoxide layers 1004 and 1008 as well as semiconductor bodies 1012 andsilicon substrate 1002. As a result, lateral recesses 1016 can be formedvertically between silicon oxide layers 1004 and 1008 thereby, whichexpose parts of semiconductor bodies 1012. As shown in the plan view,all sides of each semiconductor body 1012 can be exposed from lateralrecesses 1016.

At operation 2408 in FIG. 24 , a gate structure in contact with aplurality of sides of the exposed part of the semiconductor body isformed. In some implementations, to form the gate structure, a gatedielectric is formed over the exposed part of the semiconductor body, aconductive layer is deposited over the gate dielectric, and theconductive layer is patterned to form a gate electrode over the gatedielectric.

As illustrated in FIG. 10F, a gate dielectric 1018 is formed over theexposed part of each semiconductor body 1012, e.g., surrounding andcontacting all the sides of the exposed part of semiconductor body 1012.As shown in the plan view, gate dielectric 1018 can fully circumscribe arespective semiconductor body 1012. In some implementations, a wetoxidation and/or a dry oxidation process, such as ISSG, is performed toform native oxide (e.g., silicon oxide) on semiconductor body 1012(e.g., single crystalline silicon) as gate dielectric 1018. In someimplementations, gate dielectric 1018 is formed by depositing a layer ofdielectric, such as silicon oxide, over the exposed part ofsemiconductor body 1012 through trenches 1014 and lateral recesses 1016using one or more thin film deposition processes including, but notlimited to, CVD, PVD, ALD, or any combination thereof, without fillinglateral recesses 1016 and trenches 1014.

As illustrated in FIG. 10G, a conductive layer 1020 is formed over gatedielectrics 1018 in lateral recesses 1016 (shown in FIG. 10F) throughtrenches 1014. In some implementations, conductive layer 1020 is formedby depositing conductive materials, such as metal or metal compounds(e.g., TiN), over gate dielectrics 1018 using one or more thin filmdeposition processes including, but not limited to, CVD, PVD, ALD, orany combination thereof, through trenches 1014 to fill lateral recesses1016. In one example, the deposition of conductive layer 1020 iscontrolled not to fill trenches 1014. It is understood that in someexamples, the deposition of conductive layer 1020 may fill trenches 1014as well. Thus, a planarization process, e.g., CMP, may be performed toremove the excess conductive layer 1020 over the top surface of siliconoxide layer 1008, and conductive layer 1020 may be patterned to form agate electrode over a respective gate dielectric. For example, trenches1014 filled with conductive layer 1020 may be patterned and etched againto separate conductive layers 1020 between adjacent rows ofsemiconductor bodies 1012 and gate dielectrics 1018. As described above,a lithography process can be performed to pattern trenches 1014 againusing an etch mask (e.g., a photoresist mask), for example, based on thedesign of word lines (word line trenches).

As a result, patterned conductive layers 1020 can become word lines eachextending in the word line direction (the x-direction) and beingseparated by adjacent trenches 1014, and parts of patterned conductivelayers 1020 that are over gate dielectrics 1018 (e.g., fullycircumscribes a respective gate dielectric 1018 in the plan view) canbecome gate electrodes. Gate structures each including a respective gatedielectric 1018 over the exposed part of semiconductor body 1012 and arespective gate electrode (part of conductive layer 1020) over gatedielectric 1018 can be formed thereby. Since conductive layer 1020remains on all sides of semiconductor body 1012 (and gate dielectric1018 thereover) when patterning conductive layer 1020 (etching trenches1014), the gate structure is in contact with all sides of semiconductorbody 1012, according to some implementations, as shown in FIG. 10G. Asshown in the plan view, the gate structure (having gate dielectric 1018and the gate electrode) can fully circumscribe a respectivesemiconductor body 1012, and all sides of each semiconductor body 1012can be surrounded and contacted by the respective gate structure.Comparing FIG. 10G with FIG. 10A, silicon nitride layer 1006(sacrificial layer) in FIG. 10A is eventually replaced with conductivelayer 1020 in FIG. 10G, according to some implementations.

At operation 2410 in FIG. 24 , a first end of the semiconductor bodyaway from the substrate is doped. As illustrated in FIG. 10G, theexposed upper end of each semiconductor body 1012, e.g., one of the twoends of semiconductor body 1012 in the vertical direction (thez-direction) that is away from silicon substrate 1002, is doped to forma source/drain 1021 (e.g., a source terminal of a vertical transistor).In some implementations, an implantation process and/or thermaldiffusion process are performed to dope P-type dopants or N-type dopantsto exposed upper ends of semiconductor bodies 1012 to formsources/drains 1021. In some implementations, a silicide layer is formedon source/drain 1021 by performing a silicidation process at the exposedupper ends of semiconductor bodies 1012.

At operation 2412 in FIG. 24 , a storage unit in contact with thesemiconductor body, e.g., the doped first end thereof, is formed. Thestorage unit can include a capacitor or a PCM element. In someimplementations, to form a storage unit that is a capacitor, a firstelectrode is formed on the doped first end of the semiconductor body, acapacitor dielectric is formed on the first electrode, and a secondelectrode is formed on the capacitor dielectric.

As illustrated in FIG. 10H, one or more ILD layers are formed over thetop surface of silicon oxide layer 1008, for example, by depositingdielectrics using one or more thin film deposition processes including,but not limited to, CVD, PVD, ALD, or any combination thereof. It isunderstood that in some examples in which the ILD layers include siliconoxide, the same material as silicon oxide layer 1008, the boundary andinterface between the ILD layer and silicon oxide layer 1008 may becomeindistinguishable after the deposition. Depending on the lateraldimensions of trenches 1014 (shown in FIG. 10G), trenches 1014 may notbe fully filled with dielectrics (e.g., silicon oxide) when forming theILD layers and thus, become air gaps 1022 between adjacent word lines(patterned conductive layers 1020). It is understood that in someexamples, when the lateral dimensions of trenches 1014 are sufficientlylarge, dielectrics may fully fill trenches 1014 during the formation ofthe ILD layers, thereby eliminating air gaps 1022.

As illustrated in FIG. 10H, capacitor contacts 1024, first electrodes,capacitor dielectrics, and second electrodes of capacitors 1026, andcommon plate 1028 are subsequently formed in the ILD layers to becoupled to semiconductor bodies 1012. In some implementations, eachcapacitor contact 1024 is formed on a respective source/drain 1021,e.g., the doped upper end of a respective semiconductor body 1012 bypatterning and etching an electrode hole aligned with respectivesource/drain 1021 using lithography and etching processes and depositingconductive materials to fill the electrode hole using thin filmdeposition processes. In some implementations, common plate 1028 isformed on the second electrodes of capacitors 1026 by patterning andetching an electrode trench aligned with capacitors 1026 usinglithography and etching processes and depositing conductive materials tofill the electrode trench using thin film deposition processes.

At operation 2414 in FIG. 24 , the substrate is removed to expose asecond end of the semiconductor body opposite to the first end. Asillustrated in FIG. 10I, a carrier substrate 1030 (a.k.a. a handlesubstrate) is bonded onto the front side of silicon substrate 1002 onwhich devices are formed using any suitable bonding processes, such asanodic bonding, fusion bonding, transfer bonding, adhesive bonding, andeutectic bonding. The bonded structure can then be flipped upside down,such that silicon substrate 1002 become above carrier substrate 1030.

As illustrated in FIG. 10J, silicon substrate 1002 (shown in FIG. 10I)is removed to expose the undoped upper ends of semiconductor bodies 1012(used to be the lower ends before flipping over). In someimplementations, planarization processes (e.g., CMP) and/or etchingprocesses are performed to remove silicon substrate 1002 until beingstopped by silicon oxide layer 1004 and the upper ends of semiconductorbodies 1012.

At operation 2416 in FIG. 24 , the exposed second end of thesemiconductor body is doped. As illustrated in FIG. 10J, the exposedupper end of each semiconductor body 1012, e.g., one of the two ends ofsemiconductor body 1012 in the vertical direction (the z-direction) thatis away from carrier substrate 1030, is doped to form anothersource/drain 1023 (e.g., a source terminal of the vertical transistor).In some implementations, an implantation process and/or thermaldiffusion process are performed to dope P-type dopants or N-type dopantsto exposed upper ends of semiconductor bodies 1012 to formsources/drains 1023. In some implementations, a silicide layer is formedon source/drain 1023 by performing a silicidation process at the exposedupper ends of semiconductor bodies 1012. As a result, verticaltransistors having semiconductor body 1012, sources/drains 1021 and1023, gate dielectric 1018, and the gate electrode (part of conductivelayer 1020) are formed thereby, as shown in FIG. 10J, according to someimplementations. As described above, capacitors 1026 each having thefirst and second electrodes and the capacitor dielectric are therebyformed as well, and DRAM cells 1080 each having a multi-gate verticaltransistor and a capacitor coupled to the multi-gate vertical transistorare thereby formed, as shown in FIG. 10J, according to someimplementations.

Referring back to FIG. 23 , method 2300 proceeds to operation 2308, asillustrated in FIG. 23 , in which an interconnect layer including bitlines is formed above the array of memory cells. As illustrated in FIG.10K, an interconnect layer 1032 can be formed above DRAM cells 1080.Interconnect layer 1032 can include interconnects of MEOL and/or BEOL ina plurality of ILD layers to make electrical connections with DRAM cells1080. In some implementations, interconnect layer 1032 includes multipleILD layers and interconnects therein formed in multiple processes. Forexample, the interconnects in interconnect layers 1032 can includeconductive materials deposited by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, electroplating,electroless plating, or any combination thereof. Fabrication processesto form the interconnects can also include photolithography, CMP,wet/dry etch, or any other suitable processes. The ILD layers caninclude dielectric materials deposited on silicon oxide layer 1004 byone or more thin film deposition processes including, but not limitedto, CVD, PVD, ALD, or any combination thereof. The ILD layers andinterconnects illustrated in FIG. 10K can be collectively referred to asinterconnect layer 1032.

As shown in FIG. 24 , at operation 2418, to form the interconnect layer,a bit line is formed on the doped second end. As illustrated in FIG.10K, bit line 1034 can be formed on sources/drains 1023 by patterningand etching a trench aligned with respective source/drain 1023 usinglithography and etching processes and depositing conductive materials tofill the trench using thin film deposition processes. In someimplementations, forming bit line 1034 includes depositing a metal layeronto the exposed end of semiconductor body 1012. As a result, bit line1034 and capacitor 1026 can be formed on opposite sides of semiconductorbody 1012 and coupled to opposite ends of semiconductor body 1012. It isunderstood that additional local interconnects, such as word linecontacts 1039, capacitor contacts 1083 (e.g., a conductor), and bit linecontacts 1041 (e.g., a metal silicide contact) may be similarly formedas well. In some implementations, bit line contact 1041 (e.g., a metalsilicide contact) is formed on the exposed end of semiconductor body1012, and bit line 1034 is formed on bit line contact 1041.

Method 2300 proceeds to operation 2310, as illustrated in FIG. 23 , inwhich a second bonding layer is formed above the array of memory cellsand the interconnect layer. The second bonding layer can include asecond bonding contact. As illustrated in FIG. 10K, a bonding layer 1036is formed above interconnect layer 1032 and DRAM cells 1080. Bondinglayer 1036 can include a plurality of bonding contacts 1037 surroundedby dielectrics. In some implementations, a dielectric layer (e.g., ILDlayer) is deposited on the top surface of interconnect layer 1032 by oneor more thin film deposition processes including, but not limited to,CVD, PVD, ALD, or any combination thereof. Bonding contacts 1037 canthen be formed through the dielectric layer and in contact with theinterconnects in interconnect layer 1032 by first patterning contactholes through the dielectric layer using patterning process (e.g.,photolithography and dry/wet etch of dielectric materials in thedielectric layer). The contact holes can be filled with a conductor(e.g., Cu). In some implementations, filling the contact holes includesdepositing a barrier layer, an adhesion layer, and/or a seed layerbefore depositing the conductor.

Method 2300 proceeds to operation 2312, as illustrated in FIG. 23 , inwhich the first semiconductor structure and the second semiconductorstructure are bonded in a face-to-face manner, such that the first arrayof memory cells is coupled to the peripheral circuit across a bondinginterface. The bonding can include hybrid bonding. In someimplementations, the first bonding contact is in contact with the secondbonding contact at the bonding interface after the bonding. In someimplementations, the second semiconductor structure is above the firstsemiconductor structure after the bonding. In some implementations, thefirst semiconductor structure is above the second semiconductorstructure after the bonding.

As illustrated in FIG. 10L, carrier substrate 1030 and components formedthereon (e.g., DRAM cells 1080) are flipped upside down. As illustratedin FIG. 10M, bonding layer 1036 facing down is bonded with bonding layer1046 facing up, e.g., in a face-to-face manner, thereby forming abonding interface 1050. In some implementations, a treatment process,e.g., a plasma treatment, a wet treatment, and/or a thermal treatment,is applied to the bonding surfaces prior to the bonding. Although notshown in FIGS. 10L and 10M, silicon substrate 1038 and components formedthereon (e.g., peripheral circuits 1040) can be flipped upside down, andbonding layer 1046 facing down can be bonded with bonding layer 1036facing up, e.g., in a face-to-face manner, thereby forming bondinginterface 1050. After the bonding, bonding contacts 1037 in bondinglayer 1036 and bonding contacts 1047 in bonding layer 1046 are alignedand in contact with one another, such that DRAM cells 1080 can beelectrically connected to peripheral circuits 1040 across bondinginterface 1050. It is understood that in the bonded chip, DRAM cells1080 may be either above or below peripheral circuits 1040.Nevertheless, bonding interface 1050 can be formed vertically betweenperipheral circuits 1040 and DRAM cells 1080 after the bonding.

Method 2300 proceeds to operation 2314, as illustrated in FIG. 23 , inwhich a pad-out interconnect layer is formed on the backside of thefirst semiconductor structure or the second semiconductor structure. Asillustrated in FIG. 10M, a pad-out interconnect layer 1052 is formedabove on the backside of carrier substrate 1030. Pad-out interconnectlayer 1052 can include interconnects, such as pad contacts 1054, formedin one or more ILD layers. Pad contacts 1054 can include conductivematerials including, but not limited to, W, Co, Cu, Al, doped silicon,silicides, or any combination thereof. The ILD layers can includedielectric materials including, but not limited to, silicon oxide,silicon nitride, silicon oxynitride, low-k dielectrics, or anycombination thereof. In some implementations, after the bonding,contacts 1056 are formed extending vertically through carrier substrate1030, for example, by wet/dry etching processes, followed by depositingconductive materials. Contacts 1056 can be in contact with theinterconnects in pad-out interconnect layer 1052. It is understood thatin some examples, carrier substrate 1030 may be thinned or removed afterbonding and prior to forming pad-out interconnect layer 1052 andcontacts 1056, for example, using planarization processes and/or etchingprocesses.

Although not shown, it is understood that in some examples, pad-outinterconnect layer 1052 may be formed above on the backside of siliconsubstrate 1038, and contacts 1056 may be formed extending verticallythrough silicon substrate 1038. Silicon substrate 1038 may be thinnedprior to forming pad-out interconnect layer 1052 and contacts 1056, forexample, using planarization processes and/or etching processes.

As described above, FIGS. 10A-10M illustrates a fabrication process offorming a DRAM array having a vertical transistor in which the gatestructure is in contact with all sides of the semiconductor body, in theform of a GAA transistor. In some implementations as shown in FIG.11A-11I, by changing the layout of word line trenches, a DRAM arrayhaving a vertical transistor in which the gate structure is in contactwith some sides (e.g., three of the four sides) of the semiconductorbody are formed with a relatively larger pitch of word lines and reducedfabrication complexity.

As illustrated in FIG. 11A, a stack of a silicon oxide layer 1104, asilicon nitride layer 1106, and a silicon oxide layer 1108 is formed ona silicon substrate 1102. To form the dielectric stack, silicon oxide,silicon nitride, and silicon oxide are subsequently deposited ontosilicon substrate 1102 using one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof. In some implementations, silicon oxide layer 1104 is formed byoxidizing the top portion of silicon substrate 1102 using dry oxidationand/or we oxidation, such as ISSG oxidation process. In someimplementations, the thickness of silicon oxide layer 1104 (e.g., ISSGsilicon oxide) is smaller than the thickness of silicon oxide layer 1108(e.g., CVD silicon oxide). Besides the side view of the cross-sectionalong the y-direction (e.g., the bit line direction) shown in the topportion of FIG. 11A, the plan view of the cross-section in the x-y planethrough silicon nitride layer 1106 is also shown in the bottom portionof FIG. 11A. The same drawing layout is arranged in FIGS. 11B-11E aswell.

As illustrated in FIG. 11B, an array of semiconductor bodies 1112 eachextending vertically through the stack of silicon oxide layer 1108,silicon nitride layer 1106, and silicon oxide layer 1104 are formed.Semiconductor body 1112 can be epitaxially grown from the respectiveexposed part of silicon substrate 1102 in a respective opening (notshown). The fabrication processes for epitaxially growing semiconductorbody 1112 can include, but not limited to, VPE, LPE, MPE, or anycombinations thereof. The epitaxy can occur upward (toward the positivez-direction) from the exposed parts of silicon substrate 1102 in theopenings. Semiconductor body 1112 thus can have the same material assilicon substrate 1102, in the form of single crystalline silicon. Insome implementations, a planarization process, such as CMP, is performedto remove excess parts of semiconductor bodies 1112 beyond the topsurface of silicon oxide layer 1108. As a result, an array ofsemiconductor bodies 1112 (e.g., single crystalline silicon bodies)extending vertically (in the z-direction) from silicon substrate 1102through the stack of silicon oxide layer 1108, silicon nitride layer1106, and silicon oxide layer 1104 is formed thereby, according to someimplementation.

In some implementations, at operation 2406 in FIG. 24 , one of the stackof dielectric layers is removed to expose part of the semiconductorbody. In some implementations, to remove the one of the stack ofdielectric layers, a trench is etched through at least part of the stackof dielectric layers to expose the layer having the second dielectric,and the layer having the second dielectric (e.g., the sacrificial layer)is etched away via the trench. In some implementations, the trench isetched aligned with one side of the semiconductor body to expose thesemiconductor body from the side.

As illustrated in FIG. 11C, a plurality of trenches 1114 (slitsopenings) each extending laterally along the word line direction (thex-direction) and extending vertically through at least silicon oxidelayer 1108 and silicon nitride layer 1106 are formed to expose siliconnitride layer 1106. As a result, parts of silicon nitride layer 1106 canbe exposed from trenches 1114. In some implementations, a lithographyprocess is performed to pattern trenches 1114 using an etch mask (e.g.,a photoresist mask), for example, based on the design of word lines(word line trenches). As shown in FIG. 11C, trench 1114 is patterned tobe formed between adjacent rows of semiconductor bodies 1112 and alignedwith one side of semiconductor bodies 1112 to expose the semiconductorbodies 1112 from the side, according to some implementations. That is,trench 1114 can be patterned to touch one side of semiconductor bodies1112, such that semiconductor bodies 1112 are exposed from the side. Insome implementations, one or more dry etching and/or wet etchingprocesses, such as RIE, are performed to etch trenches 1114 throughsilicon oxide layer 1108, silicon nitride layer 1106, and silicon oxidelayer 1104 until being stopped by silicon substrate 1102. It isunderstood that in some examples, the etching of trenches 1114 may notgo all the way to silicon substrate 1102 and may be stopped at siliconoxide layer 1104 so long as silicon nitride layer 1106 is exposed fromtrenches 1114.

As illustrated in FIG. 11D, silicon nitride layer 1106 (shown in FIG.11C) is removed to expose parts of semiconductor bodies 1112 abuttingsilicon nitride layer 1106. In some implementations, silicon nitridelayer 1106 is etched away via trenches 1114. For example, a wet etchantincluding phosphoric acid may be applied through trenches 1114 toselectively wet etch silicon nitride layer 1106 without etching siliconoxide layers 1104 and 1108 as well as semiconductor bodies 1112 andsilicon substrate 1102. As a result, lateral recesses 1116 can be formedvertically between silicon oxide layers 1104 and 1008 thereby, whichexpose parts of semiconductor bodies 1112.

As illustrated in FIG. 11D, a gate dielectric 1118 is formed over theexposed part of each semiconductor body 1112, e.g., surrounding andcontacting all the sides of the exposed part of semiconductor body 1112.As shown in the plan view, gate dielectric 1118 can fully circumscribe arespective semiconductor body 1112. In some implementations, a wetoxidation and/or a dry oxidation process, such as ISSG, is performed toform native oxide (e.g., silicon oxide) on semiconductor body 1112(e.g., single crystalline silicon) as gate dielectric 1118. In someimplementations, gate dielectric 1118 is formed by depositing a layer ofdielectric, such as silicon oxide, over the exposed part ofsemiconductor body 1112 through trenches 1114 and lateral recesses 1116using one or more thin film deposition processes including, but notlimited to, CVD, PVD, ALD, or any combination thereof, without fillinglateral recesses 1116 and trenches 1114.

Different from FIG. 10F in which gate dielectric 1118 has a uniformvertical dimension (thickness in the z-direction) because all sides ofsemiconductor body 1112 is surrounded by lateral recess 1016 having thesame vertical dimension, in FIG. 11D, because one side of semiconductorbody 1112 is aligned with and touches trench 1114 having a greatervertical dimension than that of lateral recess 1116, part of gatedielectric 1118 formed on that side of semiconductor body 1112 (referredto as elongated gate dielectric part 1119) can have a greater verticaldimension than the remainder of gate dielectric 1118 formed on othersides of semiconductor body 1112 touching lateral recess 1116, as shownin the side view of FIG. 11D.

As illustrated in FIG. 11E, a conductive layer 1120 is formed over gatedielectric 1118 in lateral recesses 1116 (shown in FIG. 11D) throughtrenches 1114, but not over elongated gate dielectric part 1119. In someimplementations, conductive layer 1120 is formed by depositingconductive materials, such as metal or metal compounds (e.g., TiN), overgate dielectrics 1118 using one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof, through trenches 1114 to fill lateral recesses 1116. In oneexample, the deposition of conductive layer 1120 is controlled not tofill trenches 1114 (and not over elongated gate dielectric part 1119).It is understood that in some examples, the deposition of conductivelayer 1120 may fill trenches 1114 as well. Thus, a planarizationprocess, e.g., CMP, may be performed to remove the excess conductivelayer 1120 over the top surface of silicon oxide layer 1108, andconductive layer 1120 may be patterned to form a gate electrode overonly gate dielectric 1118, but not elongated gate dielectric part 1119.For example, trenches 1114 filled with conductive layer 1120 may bepatterned and etched again to separate conductive layers 1120 betweenadjacent rows of semiconductor bodies 1112 and gate dielectrics 1118. Asdescribed above, a lithography process can be performed to patterntrenches 1114 again using an etch mask (e.g., a photoresist mask), forexample, based on the design of word lines (word line trenches).

As a result, patterned conductive layers 1120 can become word lines eachextending in the word line direction (the x-direction) and beingseparated by adjacent trenches 1114, and parts of patterned conductivelayers 1120 that are over gate dielectrics 1118, but not elongated gatedielectric part 1119, can become gate electrodes. Gate structures eachincluding a respective gate dielectric 1118 over the exposed partsemiconductor body 1112 and a respective gate electrode (part ofconductive layer 1120) over gate dielectric 1118 can be formed thereby.Since conductive layer 1120 remains on only some sides of semiconductorbody 1012 (and gate dielectric 1018 thereover) when patterningconductive layer 1120 (etching trenches 1114), the gate structure is incontact with some, but not all, sides of semiconductor body 1012,according to some implementations, as shown in FIG. 11E. As shown in theplan view, the gate structure (having gate dielectric 1118 and the gateelectrode) can partially circumscribe a respective semiconductor body1112, and not all sides of each semiconductor body 1112 can besurrounded and contacted by the respective gate structure. Compared withthe pitch of word lines 1020 in the example in FIG. 10G, the pitch ofword lines 1120 in FIG. 11E may be increased to reduce the fabricationcomplexity.

As illustrated in FIG. 11E, the exposed upper end of each semiconductorbody 1112, e.g., one of the two ends of semiconductor body 1112 in thevertical direction (the z-direction) that is away from silicon substrate1102, is doped to form a source/drain 1121 (e.g., a source terminal of avertical transistor). In some implementations, an implantation processand/or thermal diffusion process are performed to dope P-type dopants orN-type dopants to exposed upper ends of semiconductor bodies 1112 toform sources/drains 1021.

As illustrated in FIG. 11F, one or more ILD layers are formed over thetop surface of silicon oxide layer 1108, for example, by depositingdielectrics using one or more thin film deposition processes including,but not limited to, CVD, PVD, ALD, or any combination thereof. It isunderstood that in some examples in which the ILD layers include siliconoxide, the same material as silicon oxide layer 1108, the boundary andinterface between the ILD layer and silicon oxide layer 1108 may becomeindistinguishable after the deposition. Due to the relatively largerlateral dimensions of trenches 1114 (shown in FIG. 11E) compared withtrenches 1014 (as a result of a larger pitch of word lines 1120),trenches 1114 may be fully filled or at least partially with dielectrics(e.g., silicon oxide) when forming the ILD layers and thus, eliminatingair gaps 1022 or at least reducing air gaps 1022 between adjacent wordlines (patterned conductive layers 1120).

As illustrated in FIG. 11F, capacitor contacts 1124, first electrodes,capacitor dielectrics, and second electrodes of capacitors 1126, andcommon plate 1128 are subsequently formed in the ILD layers to becoupled to semiconductor bodies 1112. In some implementations, eachcapacitor contact 1124 is formed on a respective source/drain 1121,e.g., the doped upper end of a respective semiconductor body 1112 bypatterning and etching an electrode hole aligned with respectivesource/drain 1121 using lithography and etching processes and depositingconductive materials to fill the electrode hole using thin filmdeposition processes. In some implementations, common plate 1128 isformed on the second electrodes of capacitors 1126 by patterning andetching an electrode trench aligned with capacitors 1126 usinglithography and etching processes and depositing conductive materials tofill the electrode trench using thin film deposition processes.

As illustrated in FIG. 11G, a carrier substrate 1130 (a.k.a. a handlesubstrate) is bonded onto the front side of silicon substrate 1102 onwhich devices are formed using any suitable bonding processes, such asanodic bonding, fusion bonding, transfer bonding, adhesive bonding, andeutectic bonding. The bonded structure can then be flipped upside down,such that silicon substrate 1102 become above carrier substrate 1130.

As illustrated in FIG. 11H, silicon substrate 1102 (shown in FIG. 11G)is removed to expose the undoped upper ends of semiconductor bodies 1112(used to be the lower ends before flipping over). In someimplementations, planarization processes (e.g., CMP) and/or etchingprocesses are performed to remove silicon substrate 1102 until beingstopped by silicon oxide layer 1104 and the upper ends of semiconductorbodies 1112.

As illustrated in FIG. 11H, the exposed upper end of each semiconductorbody 1112, e.g., one of the two ends of semiconductor body 1112 in thevertical direction (the z-direction) that is away from carrier substrate1130, is doped to form another source/drain 1123 (e.g., a drain terminalof the vertical transistor). In some implementations, an implantationprocess and/or thermal diffusion process are performed to dope P-typedopants or N-type dopants to exposed upper ends of semiconductor bodies1112 to form sources/drains 1123. As a result, multi-gate verticaltransistors having semiconductor body 1112, sources/drains 1121 and1123, gate dielectric 1118 (not including elongated gate dielectric part1119), and the gate electrode (part of conductive layer 1120) are formedthereby, as shown in FIG. 11H, according to some implementations. Asdescribed above, capacitors 1126 are thereby formed as well, and DRAMcells 1180 each having a multi-gate vertical transistor and a capacitorcoupled to the multi-gate vertical transistor are thereby formed, asshown in FIG. 11H, according to some implementations.

As illustrated in FIG. 11I, an interconnect layer 1132 can be formedabove DRAM cells 1180. Interconnect layer 1132 can include interconnectsof MEOL and/or BEOL in a plurality of ILD layers to make electricalconnections with DRAM cells 1180. In some implementations, interconnectlayer 1132 includes multiple ILD layers and interconnects therein formedin multiple processes. For example, the interconnects in interconnectlayers 1132 can include conductive materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, electroplating, electroless plating, or any combination thereof.Fabrication processes to form the interconnects can also includephotolithography, CMP, wet/dry etch, or any other suitable processes.The ILD layers can include dielectric materials deposited on siliconoxide layer 1104 by one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof. The ILD layers and interconnects illustrated in FIG. 11I can becollectively referred to as interconnect layer 1132. As illustrated inFIG. 11I, bit line 1134 can be formed on sources/drains 1123 bypatterning and etching a trench aligned with respective source/drain1123 using lithography and etching processes and depositing conductivematerials to fill the trench using thin film deposition processes. Insome implementations, forming bit line 1134 includes depositing a metallayer onto the exposed end of semiconductor body 1112.

As illustrated in FIG. 11I, a bonding layer 1136 is formed aboveinterconnect layer 1132 and DRAM cells 1180. Bonding layer 1136 caninclude a plurality of bonding contacts 1137 surrounded by dielectrics.In some implementations, a dielectric layer (e.g., ILD layer) isdeposited on the top surface of interconnect layer 1132 by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, or any combination thereof. Bonding contacts 1137 can then beformed through the dielectric layer and in contact with theinterconnects in interconnect layer 1132 by first patterning contactholes through the dielectric layer using patterning process (e.g.,photolithography and dry/wet etch of dielectric materials in thedielectric layer). The contact holes can be filled with a conductor(e.g., Cu). In some implementations, filling the contact holes includesdepositing a barrier layer, an adhesion layer, and/or a seed layerbefore depositing the conductor.

As described above, FIGS. 10A-10M illustrates a fabrication process offorming a DRAM cell array from a three-layer dielectric stack having asacrificial layer (e.g., silicon nitride layer 1006) sandwiched betweentwo dielectric layers (e.g., silicon oxide layers 1004 and 1008). It isunderstood that the configuration of the dielectric stack from which theDRAM cell array is formed can vary in other examples, resulting DRAMcells with different structures, such as in 3D memory devices 603 and605 in FIGS. 6C and 6D. In some implementations as shown in FIGS.12A-12H, a DRAM cell array is formed from a two-layer dielectric stackhaving a sacrificial layer on a dielectric layer.

At operation 2402 in FIG. 24 , a stack of dielectric layers is formed ona substrate. In some implementations, to form the stack of dielectriclayers, two layers having a first dielectric and a second dielectric,respectively, are subsequently deposited on the substrate. The firstdielectric can include silicon oxide, and the second dielectric caninclude silicon nitride. The layer having the second dielectric can actas a sacrificial layer on the layer having the first dielectric. Thesacrificial layer can be removed by selectively etching against theother layer having the first dielectric and replaced with a conductivelayer in the later processes.

As illustrated in FIG. 12A, a stack of a silicon oxide layer 1204 and asilicon nitride layer 1206 is formed on a silicon substrate 1202. Toform the dielectric stack, silicon oxide and silicon nitride aresubsequently deposited onto silicon substrate 1202 using one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, or any combination thereof. In some implementations, silicon oxidelayer 1204 is formed by oxidizing the top portion of silicon substrate1202 using dry oxidation and/or we oxidation, such as in situ steamgeneration (ISSG) oxidation process.

As illustrated in FIG. 12B, an array of semiconductor bodies 1212 eachextending vertically through the stack of silicon nitride layer 1206 andsilicon oxide layer 1204 are formed. Semiconductor body 1212 can beepitaxially grown from the respective exposed part of silicon substrate1202 in a respective opening (not shown). The fabrication processes forepitaxially growing semiconductor body 1212 can include, but not limitedto, VPE, LPE, MPE, or any combinations thereof. The epitaxy can occurupward (toward the positive z-direction) from the exposed parts ofsilicon substrate 1202 in the openings. Semiconductor body 1212 thus canhave the same material as silicon substrate 1202, in the form of singlecrystalline silicon. In some implementations, a planarization process,such as CMP, is performed to remove excess parts of semiconductor bodies1212 beyond the top surface of silicon nitride layer 1206. As a result,an array of semiconductor bodies 1212 (e.g., single crystalline siliconbodies) extending vertically (in the z-direction) from silicon substrate1202 through the stack of silicon nitride layer 1206 and silicon oxidelayer 1204 is formed thereby, according to some implementation.

As illustrated in FIG. 12C, a plurality of trenches 1214 (slitsopenings) each extending laterally along the word line direction (thex-direction) and extending vertically through at least silicon nitridelayer 1206 are formed to expose silicon nitride layer 1206. As a result,parts of silicon nitride layer 1206 can be exposed from trenches 1214.In some implementations, a lithography process is performed to patterntrenches 1214 using an etch mask (e.g., a photoresist mask), forexample, based on the design of word lines (word line trenches). In someimplementations, one or more dry etching and/or wet etching processes,such as RIE, are performed to etch trenches 1214 through silicon nitridelayer 1206 and silicon oxide layer 1204 until being stopped by siliconsubstrate 1202. It is understood that in some examples, the etching oftrenches 1214 may not go all the way to silicon substrate 1202 and maybe stopped at silicon oxide layer 1204 so long as silicon nitride layer1206 is exposed from trenches 1214.

As illustrated in FIG. 12D, silicon nitride layer 1206 (shown in FIG.12C) is removed to expose parts of semiconductor bodies 1212 abuttingsilicon nitride layer 1206. In some implementations, silicon nitridelayer 1206 is etched away via trenches 1214. For example, a wet etchantincluding phosphoric acid may be applied through trenches 1214 toselectively wet etch silicon nitride layer 1206 without etching siliconoxide layer 1204 as well as semiconductor bodies 1212 and siliconsubstrate 1202. As a result, lateral recesses 1216 can be formedthereby, which expose parts of semiconductor bodies 1212. It isunderstood that in some examples, the top surface of silicon nitridelayer 1206 may be exposed, such that trenches 1214 may not be needed toremove silicon nitride layer 1206. Dry etching and/or wet etchingprocesses may be applied directly on silicon nitride layer 1206 toremove silicon nitride layer 1206 (from FIG. 12B to FIG. 12D directlywithout going through FIG. 12C).

As illustrated in FIG. 12D, a gate dielectric 1218 is formed over theexposed part of each semiconductor body 1212, e.g., surrounding andcontacting all the sides of the exposed part of semiconductor body 1212.In some implementations, a wet oxidation and/or a dry oxidation process,such as ISSG, is performed to form native oxide (e.g., silicon oxide) onsemiconductor body 1212 (e.g., single crystalline silicon) as gatedielectric 1218. In some implementations, gate dielectric 1218 is formedby depositing a layer of dielectric, such as silicon oxide, over theexposed part of semiconductor body 1212 through trenches 1214 andlateral recesses 1216 using one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof, without filling lateral recesses 1216 and trenches 1214. Due tothe omission of silicon oxide layer 1008, the upper end of gatedielectric 1218 can be flush with the upper end of semiconductor body1212 as shown in FIG. 12D, while the upper end of gate dielectric 1018is below the upper end of semiconductor body 1012 in FIG. 10F.

As illustrated in FIG. 12E, a conductive layer 1220 is formed over gatedielectrics 1218 in lateral recesses 1216 (shown in FIG. 12D) throughtrenches 1214. In some implementations, conductive layer 1220 is formedby depositing conductive materials, such as metal or metal compounds(e.g., TiN), over gate dielectrics 1218 using one or more thin filmdeposition processes including, but not limited to, CVD, PVD, ALD, orany combination thereof, through trenches 1214 to fill lateral recesses1216. In one example, the deposition of conductive layer 1220 iscontrolled not to fill trenches 1214. It is understood that in someexamples, the deposition of conductive layer 1220 may fill trenches 1214as well. Thus, a planarization process, e.g., CMP, may be performed toremove the excess conductive layer 1220 to expose the upper ends ofsemiconductor bodies 1212, and conductive layer 1220 may be patterned toform a gate electrode over a respective gate dielectric. For example,trenches 1214 filled with conductive layer 1220 may be patterned andetched again to separate conductive layers 1220 between adjacent rows ofsemiconductor bodies 1212 and gate dielectrics 1218. As described above,a lithography process can be performed to pattern trenches 1214 againusing an etch mask (e.g., a photoresist mask), for example, based on thedesign of word lines (word line trenches). Due to the omission ofsilicon oxide layer 1008, the top surface of conductive layer 1220(including gate electrodes and word line) can be flush with the upperend of semiconductor body 1212 as shown in FIG. 12E, while the topsurface of word line 1020 is below the upper end of semiconductor body1012 in FIG. 10G.

As a result, patterned conductive layers 1220 can become word lines eachextending in the word line direction (the x-direction) and beingseparated by adjacent trenches 1214, and parts of patterned conductivelayers 1220 that are over gate dielectrics 1218 (e.g., fullycircumscribes a respective gate dielectric 1218 in the plan view) canbecome gate electrodes. Gate structures each including a respective gatedielectric 1218 over the exposed part semiconductor body 1212 and arespective gate electrode (part of conductive layer 1220) over gatedielectric 1218 can be formed thereby. Comparing FIG. 12E with FIG. 12A,silicon nitride layer 1206 (sacrificial layer) in FIG. 12A is eventuallyreplaced with conductive layer 1220 in FIG. 12E, according to someimplementations.

As illustrated in FIG. 12E, the exposed upper end of each semiconductorbody 1212, e.g., one of the two ends of semiconductor body 1212 in thevertical direction (the z-direction) that is away from silicon substrate1202, is doped to form a source/drain 1221. In some implementations, animplantation process and/or thermal diffusion process are performed todope P-type dopants or N-type dopants to exposed upper ends ofsemiconductor bodies 1212 to form sources/drains 1221.

As illustrated in FIG. 12F, one or more ILD layers are formed over thetop surface of conductive layer 1220, for example, by depositingdielectrics using one or more thin film deposition processes including,but not limited to, CVD, PVD, ALD, or any combination thereof. Dependingon the lateral dimensions of trenches 1214 (shown in FIG. 12E), trenches1214 may not be fully filled with dielectrics (e.g., silicon oxide) whenforming the ILD layers and thus, become air gaps 1222 between adjacentword lines (patterned conductive layers 1220). It is understood that insome examples, when the lateral dimensions of trenches 1214 aresufficiently large, dielectrics may fully fill trenches 1214 during theformation of the ILD layers, thereby eliminating air gaps 1222.

As illustrated in FIG. 12F, capacitor contacts 1224, first electrodes,capacitor dielectrics, and second electrodes of capacitors 1226, and acommon plate 1228 are subsequently formed in the ILD layers to becoupled to semiconductor bodies 1212. In some implementations, eachcapacitor contact 1224 is formed on a respective source/drain 1221,e.g., the doped upper end of a respective semiconductor body 1212 bypatterning and etching an electrode hole aligned with respectivesource/drain 1221 using lithography and etching processes and depositingconductive materials to fill the electrode hole using thin filmdeposition processes. In some implementations, common plate 1228 isformed on the second electrodes of capacitors 1226 by patterning andetching an electrode trench aligned with capacitors 1226 usinglithography and etching processes and depositing conductive materials tofill the electrode trench using thin film deposition processes.

As illustrated in FIG. 12G, a carrier substrate (a.k.a. a handlesubstrate) 1230 is bonded onto the front side of silicon substrate 1202on which devices are formed using any suitable bonding processes, suchas anodic bonding, fusion bonding, transfer bonding, adhesive bonding,and eutectic bonding. The bonded structure can then be flipped upsidedown, such that silicon substrate 1202 become above carrier substrate1230.

As illustrated in FIG. 12G, silicon substrate 1202 (shown in FIG. 12F)is removed to expose the undoped upper ends of semiconductor bodies 1212(used to be the lower ends before flipping over). In someimplementations, planarization processes (e.g., CMP) and/or etchingprocesses are performed to remove silicon substrate 1202 until beingstopped by silicon oxide layer 1204 and the upper ends of semiconductorbodies 1212.

As illustrated in FIG. 12G, the exposed upper end of each semiconductorbody 1212, e.g., one of the two ends of semiconductor body 1212 in thevertical direction (the z-direction) that is away from carrier substrate1230, is doped to form another source/drain 1223. In someimplementations, an implantation process and/or thermal diffusionprocess are performed to dope P-type dopants or N-type dopants toexposed upper ends of semiconductor bodies 1212 to form sources/drains1223. As a result, multi-gate vertical transistors having semiconductorbody 1212, sources/drains 1221 and 1223, gate dielectric 1218, and thegate electrode (part of conductive layer 1220) are formed thereby, asshown in FIG. 12G, according to some implementations. As describedabove, capacitors each having first and second electrodes 1224 and 1228and capacitor dielectric 1226 are thereby formed as well, and DRAM cells1280 each having a multi-gate vertical transistor and a capacitorcoupled to the multi-gate vertical transistor are thereby formed, asshown in FIG. 12G, according to some implementations.

As illustrated in FIG. 12H, an interconnect layer 1232 can be formedabove DRAM cells 1280. Interconnect layer 1232 can include interconnectsof MEOL and/or BEOL in a plurality of ILD layers to make electricalconnections with DRAM cells 1280. In some implementations, interconnectlayer 1232 includes multiple ILD layers and interconnects therein formedin multiple processes. For example, the interconnects in interconnectlayers 1232 can include conductive materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, electroplating, electroless plating, or any combination thereof.Fabrication processes to form the interconnects can also includephotolithography, CMP, wet/dry etch, or any other suitable processes.The ILD layers can include dielectric materials deposited on siliconoxide layer 1204 by one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof. The ILD layers and interconnects illustrated in FIG. 12H can becollectively referred to as interconnect layer 1232. As illustrated inFIG. 12H, bit line 1234 can be formed on sources/drains 1223 bypatterning and etching a trench aligned with respective source/drain1223 using lithography and etching processes and depositing conductivematerials to fill the trench using thin film deposition processes. Insome implementations, forming bit line 1234 includes depositing a metallayer onto the exposed end of semiconductor body 1212.

As illustrated in FIG. 12H, a bonding layer 1236 is formed aboveinterconnect layer 1232 and DRAM cells 1280. Bonding layer 1236 caninclude a plurality of bonding contacts 1237 surrounded by dielectrics.In some implementations, a dielectric layer (e.g., ILD layer) isdeposited on the top surface of interconnect layer 1232 by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, or any combination thereof. Bonding contacts 1237 can then beformed through the dielectric layer and in contact with theinterconnects in interconnect layer 1232 by first patterning contactholes through the dielectric layer using patterning process (e.g.,photolithography and dry/wet etch of dielectric materials in thedielectric layer). The contact holes can be filled with a conductor(e.g., Cu). In some implementations, filling the contact holes includesdepositing a barrier layer, an adhesion layer, and/or a seed layerbefore depositing the conductor.

In some implementations as shown in FIGS. 13A-13H, a DRAM cell array isformed from a four-layer dielectric stack having a sacrificial layer(e.g., a silicon oxide layer) sandwiched between two dielectric layers(e.g., silicon nitride layers) on a pad layer (e.g., a silicon oxidelayer).

At operation 2402 in FIG. 24 , a stack of dielectric layers is formed ona substrate. In some implementations, to form the stack of dielectriclayers, four layers having a first dielectric, a second dielectric, athird dielectric, and the second dielectric, respectively, aresubsequently deposited on the substrate. The second dielectric caninclude silicon nitride, and the third dielectric can include siliconoxide. The layer having the third dielectric can act as a sacrificiallayer vertically sandwiched between the two layers having the seconddielectric. The sacrificial layer can be removed by selectively etchingagainst the other layer having the second dielectric and replaced with aconductive layer in the later processes.

As illustrated in FIG. 13A, a stack of a silicon oxide layer 1304, asilicon nitride layer 1306, a silicon oxide layer 1308, and a siliconnitride layer 1309 is formed on a silicon substrate 1302. To form thedielectric stack, silicon oxide and silicon nitride are subsequently andalternatively deposited onto silicon substrate 1202 using one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, or any combination thereof. In some implementations, silicon oxidelayer 1304 (a pad layer) is formed by oxidizing the top portion ofsilicon substrate 1302 using dry oxidation and/or we oxidation, such asISSG oxidation process. In some implementations, the thickness ofsilicon oxide layer 1304 (e.g., ISSG silicon oxide) is smaller than thethickness of silicon oxide layer 1308 (e.g., CVD silicon oxide).

As illustrated in FIG. 13B, an array of semiconductor bodies 1312 eachextending vertically through the stack of silicon oxide layer 1304,silicon nitride layer 1306, silicon oxide layer 1308, and siliconnitride layer 1309 are formed. Semiconductor body 1312 can beepitaxially grown from the respective exposed part of silicon substrate1302 in a respective opening (not shown). The fabrication processes forepitaxially growing semiconductor body 1312 can include, but not limitedto, VPE, LPE, MPE, or any combinations thereof. The epitaxy can occurupward (toward the positive z-direction) from the exposed parts ofsilicon substrate 1302 in the openings. Semiconductor body 1312 thus canhave the same material as silicon substrate 1302, in the form of singlecrystalline silicon. In some implementations, a planarization process,such as CMP, is performed to remove excess parts of semiconductor bodies1312 beyond the top surface of silicon nitride layer 1309. As a result,an array of semiconductor bodies 1312 (e.g., single crystalline siliconbodies) extending vertically (in the z-direction) from silicon substrate1302 through the stack of silicon oxide layer 1304, silicon nitridelayer 1306, silicon oxide layer 1308, and silicon nitride layer 1309 isformed thereby, according to some implementation.

At operation 2406 in FIG. 24 , one of the stack of dielectric layers isremoved to expose part of the semiconductor body. In someimplementations, to remove the one of the stack of dielectric layers, atrench is etched through at least part of the stack of dielectric layersto expose the layer having the third dielectric, and the layer havingthe third dielectric (e.g., the sacrificial layer) is etched away viathe trench.

As illustrated in FIG. 13C, a plurality of trenches 1314 (slitsopenings) each extending laterally along the word line direction (thex-direction) and extending vertically through at least silicon nitridelayer 1309 and silicon oxide layer 1308 are formed to expose siliconoxide layer 1308. As a result, parts of silicon oxide layer 1308 can beexposed from trenches 1314. In some implementations, a lithographyprocess is performed to pattern trenches 1314 using an etch mask (e.g.,a photoresist mask), for example, based on the design of word lines(word line trenches). In some implementations, one or more dry etchingand/or wet etching processes, such as RIE, are performed to etchtrenches 1314 through silicon nitride layer 1309 and silicon oxide layer1308 until being stopped by silicon nitride layer 1306. It is understoodthat in some examples, the etching of trenches 1314 may go further intosilicon nitride layer 1306, but not into silicon oxide layer 1304.

As illustrated in FIG. 13D, silicon oxide layer 1308 (shown in FIG. 13C)is removed to expose parts of semiconductor bodies 1312 abutting siliconoxide layer 1308. In some implementations, silicon oxide layer 1308 isetched away via trenches 1214. For example, a wet etchant includinghydrofluoric acid may be applied through trenches 1314 to selectivelywet etch silicon oxide layer 1308 without etching silicon nitride layers1309 and 1306 as well as semiconductor bodies 1312. As a result, lateralrecesses 1316 can be formed thereby, which expose parts of semiconductorbodies 1312.

As illustrated in FIG. 13E, a gate dielectric 1318 is formed over theexposed part of each semiconductor body 1312, e.g., surrounding andcontacting all the sides of the exposed part of semiconductor body 1312.In some implementations, a wet oxidation and/or a dry oxidation process,such as ISSG, is performed to form native oxide (e.g., silicon oxide) onsemiconductor body 1312 (e.g., single crystalline silicon) as gatedielectric 1318. In some implementations, gate dielectric 1318 is formedby depositing a layer of dielectric, such as silicon oxide, over theexposed part of semiconductor body 1312 through trenches 1314 andlateral recesses 1316 using one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof, without filling lateral recesses 1316 and trenches 1314. Due tothe existence of silicon nitride layer 1309, the upper end of gatedielectric 1318 can be below the upper end of semiconductor body 1312 inFIG. 13E.

As illustrated in FIG. 13F, a conductive layer 1320 is formed over gatedielectrics 1318 in lateral recesses 1316 (shown in FIG. 13E) throughtrenches 1314. In some implementations, conductive layer 1320 is formedby depositing conductive materials, such as metal or metal compounds(e.g., TiN), over gate dielectrics 1318 using one or more thin filmdeposition processes including, but not limited to, CVD, PVD, ALD, orany combination thereof, through trenches 1314 to fill lateral recesses1316. In one example, the deposition of conductive layer 1320 iscontrolled not to fill trenches 1314. It is understood that in someexamples, the deposition of conductive layer 1320 may fill trenches 1314as well. Thus, a planarization process, e.g., CMP, may be performed toremove the excess conductive layer 1320 to expose the upper ends ofsemiconductor bodies 1312, and conductive layer 1320 may be patterned toform a gate electrode over a respective gate dielectric. For example,trenches 1314 filled with conductive layer 1320 may be patterned andetched again to separate conductive layers 1320 between adjacent rows ofsemiconductor bodies 1312 and gate dielectrics 1318. As described above,a lithography process can be performed to pattern trenches 1314 againusing an etch mask (e.g., a photoresist mask), for example, based on thedesign of word lines (word line trenches). Due to the existence ofsilicon nitride layer 1309, the top surface of conductive layer 1320(including gate electrodes and word line) can be below the upper end ofsemiconductor body 1312 in FIG. 13F.

As a result, patterned conductive layers 1320 can become word lines eachextending in the word line direction (the x-direction) and beingseparated by adjacent trenches 1314, and parts of patterned conductivelayers 1320 that are over gate dielectrics 1318 (e.g., fullycircumscribes a respective gate dielectric 1318 in the plan view) canbecome gate electrodes. Gate structures each including a respective gatedielectric 1318 over the exposed part semiconductor body 1312 and arespective gate electrode (part of conductive layer 1320) over gatedielectric 1318 can be formed thereby. Comparing FIG. 13F with FIG. 13A,silicon oxide layer 1308 (sacrificial layer) in FIG. 13A is eventuallyreplaced with conductive layer 1320 in FIG. 13F, according to someimplementations.

As illustrated in FIG. 13F, the exposed upper end of each semiconductorbody 1312, e.g., one of the two ends of semiconductor body 1312 in thevertical direction (the z-direction) that is away from silicon substrate1302, is doped to form a source/drain 1321 (e.g., a source terminal of avertical transistor). In some implementations, an implantation processand/or thermal diffusion process are performed to dope P-type dopants orN-type dopants to exposed upper ends of semiconductor bodies 1312 toform sources/drains 1321.

As illustrated in FIG. 13G, one or more ILD layers are formed over thetop surface of silicon nitride layer 1309, for example, by depositingdielectrics using one or more thin film deposition processes including,but not limited to, CVD, PVD, ALD, or any combination thereof. Dependingon the lateral dimensions of trenches 1314 (shown in FIG. 13F), trenches1314 may not be fully filled with dielectrics (e.g., silicon oxide) whenforming the ILD layers and thus, become air gaps 1322 between adjacentword lines (patterned conductive layers 1320). It is understood that insome examples, when the lateral dimensions of trenches 1314 aresufficiently large, dielectrics may fully fill trenches 1314 during theformation of the ILD layers, thereby eliminating air gaps 1322.

As illustrated in FIG. 13G, capacitor contacts 1324, first electrodes,capacitor dielectrics, and second electrodes of capacitors 1326, and acommon plate 1328 are subsequently formed in the ILD layers to becoupled to semiconductor bodies 1312. In some implementations, eachcapacitor contact 1324 is formed on a respective source/drain 1321,e.g., the doped upper end of a respective semiconductor body 1312 bypatterning and etching an electrode hole aligned with respectivesource/drain 1321 using lithography and etching processes and depositingconductive materials to fill the electrode hole using thin filmdeposition processes. In some implementations, common plate 1328 isformed on capacitors 1326 by patterning and etching an electrode trenchaligned with capacitors 1326 using lithography and etching processes anddepositing conductive materials to fill the electrode trench using thinfilm deposition processes.

As illustrated in FIG. 13H, a carrier substrate 1330 (a.k.a. a handlesubstrate) is bonded onto the front side of silicon substrate 1302 onwhich devices are formed using any suitable bonding processes, such asanodic bonding, fusion bonding, transfer bonding, adhesive bonding, andeutectic bonding. The bonded structure can then be flipped upside down,such that silicon substrate 1302 become above carrier substrate 1330.

As illustrated in FIG. 13H, silicon substrate 1302 (shown in FIG. 13G)is removed to expose the undoped upper ends of semiconductor bodies 1312(used to be the lower ends before flipping over). In someimplementations, planarization processes (e.g., CMP) and/or etchingprocesses are performed to remove silicon substrate 1302 until beingstopped by silicon oxide layer 1304 and the upper ends of semiconductorbodies 1312.

As illustrated in FIG. 13H, the exposed upper end of each semiconductorbody 1312, e.g., one of the two ends of semiconductor body 1312 in thevertical direction (the z-direction) that is away from carrier substrate1330, is doped to form another source/drain 1323 (e.g., a drain terminalof the vertical transistor). In some implementations, an implantationprocess and/or thermal diffusion process are performed to dope P-typedopants or N-type dopants to exposed upper ends of semiconductor bodies1312 to form sources/drains 1323. As a result, vertical transistorshaving semiconductor body 1312, sources/drains 1321 and 1323, gatedielectric 1318, and the gate electrode (part of conductive layer 1320)are formed thereby, as shown in FIG. 13H, according to someimplementations. As described above, capacitors each having first andsecond electrodes 1324 and 1328 and capacitor dielectric 1326 arethereby formed as well, and DRAM cells 1380 each having a multi-gatevertical transistor and a capacitor coupled to the multi-gate verticaltransistor are thereby formed, as shown in FIG. 13H, according to someimplementations.

As illustrated in FIG. 13H, an interconnect layer 1332 can be formedabove DRAM cells 1380. Interconnect layer 1332 can include interconnectsof MEOL and/or BEOL in a plurality of ILD layers to make electricalconnections with DRAM cells 1380. In some implementations, interconnectlayer 1332 includes multiple ILD layers and interconnects therein formedin multiple processes. For example, the interconnects in interconnectlayers 1332 can include conductive materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, electroplating, electroless plating, or any combination thereof.Fabrication processes to form the interconnects can also includephotolithography, CMP, wet/dry etch, or any other suitable processes.The ILD layers can include dielectric materials deposited on siliconoxide layer 1304 by one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof. The ILD layers and interconnects illustrated in FIG. 13H can becollectively referred to as interconnect layer 1332. As illustrated inFIG. 13H, bit line 1334 can be formed on sources/drains 1323 bypatterning and etching a trench aligned with respective source/drain1323 using lithography and etching processes and depositing conductivematerials to fill the trench using thin film deposition processes. Insome implementations, forming bit line 1334 includes depositing a metallayer onto the exposed end of semiconductor body 1312.

As illustrated in FIG. 13H, a bonding layer 1336 is formed aboveinterconnect layer 1332 and DRAM cells 1380. Bonding layer 1336 caninclude a plurality of bonding contacts 1337 surrounded by dielectrics.In some implementations, a dielectric layer (e.g., ILD layer) isdeposited on the top surface of interconnect layer 1332 by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, or any combination thereof. Bonding contacts 1337 can then beformed through the dielectric layer and in contact with theinterconnects in interconnect layer 1332 by first patterning contactholes through the dielectric layer using patterning process (e.g.,photolithography and dry/wet etch of dielectric materials in thedielectric layer). The contact holes can be filled with a conductor(e.g., Cu). In some implementations, filling the contact holes includesdepositing a barrier layer, an adhesion layer, and/or a seed layerbefore depositing the conductor.

A third semiconductor structure including a second array of memory cellscan be formed. Each of the memory cells can also include a verticaltransistor, and a storage unit coupled to the vertical transistor. Thesecond semiconductor structure and the third semiconductor structure canbe bonded in a face-to-face manner. In some implementations, the secondand third semiconductor structures are bonded prior to bonding the firstand second semiconductor structures. For example, as shown in FIG. 23 ,the second and third semiconductor structures may be bonded prior tooperation 2312, e.g., between operation 2306 and operation 2308.

As illustrated in FIG. 14A, two semiconductor structures 1000 and 1400are formed separately (e.g., in parallel) using any suitable fabricationprocesses disclosed herein (e.g., in FIGS. 10A-10H). For ease ofdescription, the fabrication process of forming semiconductor structure1400 is not repeated and is the same as that of forming semiconductorstructure 1000. Thus, two semiconductor structures 1000 and 1400 mayhave the same devices therein.

As illustrated in FIG. 14A, semiconductor structure 1400 is flippedupside down. As illustrated in FIG. 14B, semiconductor structure 1400facing down is bonded with semiconductor structure 1000 facing up, e.g.,in a face-to-face manner, thereby forming a bonding interface 1402,using any suitable substrate/wafer bonding processes including, forexample, hybrid bonding (as described above in detail), anodic bonding,and fusion (direct) bonding. In one example, fusion bonding may beperformed between layers of silicon and silicon, silicon and siliconoxide, or silicon oxide and silicon oxide with pressure and heat. Inanother example, anodic bonding may be performed between layers ofsilicon oxide (in an ionic glass) and silicon with voltage, pressure,and heat. It is understood that depending on the bonding process,dielectric layers (e.g., silicon oxide layers) may be formed on one orboth sides of bonding interface 1402. For example, silicon oxide layersmay be formed on the top surfaces of semiconductor structures 1000 and1400 to allow SiO₂—SiO₂ bonding using fusion bonding. In someimplementations, common plate 1028 of semiconductor structure 1400 arein contact with common plate of semiconductor structure 1000 at bondinginterface 1402 and thus, may be viewed as a common electrode (e.g.,common ground plate) of both semiconductor structures 1000 and 1400.

As illustrated in FIG. 14B, silicon substrate 1002 (shown in FIG. 14A)of semiconductor structure 1400 (on top of semiconductor structure 1000after bonding) is removed to expose the undoped upper ends ofsemiconductor bodies 1012 (used to be the lower ends before flippingover). In some implementations, planarization processes (e.g., CMP)and/or etching processes are performed to remove silicon substrate 1002of semiconductor structure 1400 until being stopped by silicon oxidelayer 1004 and the upper ends of semiconductor bodies 1012 ofsemiconductor structure 1400.

As illustrated in FIG. 14B, the exposed upper end of each semiconductorbody 1012 of semiconductor structure 1400, e.g., one of the two ends ofsemiconductor body 1012 in the vertical direction (the z-direction) thatis away from semiconductor structure 1000, is doped to form anothersource/drain 1023. In some implementations, an implantation processand/or thermal diffusion process are performed to dope P-type dopants orN-type dopants to exposed upper ends of semiconductor bodies 1012 ofsemiconductor structure 1400 to form sources/drains 1023. As a result,multi-gate vertical transistors having semiconductor body 1012,sources/drains 1021 and 1023, gate dielectric 1018, and the gateelectrode (part of conductive layer 1020) are formed thereby insemiconductor structure 1400, as shown in FIG. 14B, according to someimplementations. As described above, capacitors 1026 are thereby formedas well, and DRAM cells 1080 each having a multi-gate verticaltransistor and a capacitor coupled to the multi-gate vertical transistorare thereby formed of semiconductor structure 1400, as shown in FIG.14B, according to some implementations.

As illustrated in FIG. 14C, an interconnect layer 1032 can be formedabove DRAM cells 1080. Interconnect layer 1032 can include interconnectsof MEOL and/or BEOL in a plurality of ILD layers to make electricalconnections with DRAM cells 1080. In some implementations, interconnectlayer 1032 includes multiple ILD layers and interconnects therein formedin multiple processes. For example, the interconnects in interconnectlayers 1032 can include conductive materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, electroplating, electroless plating, or any combination thereof.Fabrication processes to form the interconnects can also includephotolithography, CMP, wet/dry etch, or any other suitable processes.The ILD layers can include dielectric materials deposited on siliconoxide layer 1004 by one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof. The ILD layers and interconnects illustrated in FIG. 14C can becollectively referred to as interconnect layer 1032.

As illustrated in FIG. 14D, a carrier substrate 1030 (a.k.a. a handlesubstrate) is bonded onto the front side of semiconductor structure 1400on which devices are formed using any suitable bonding processes, suchas anodic bonding, fusion bonding, transfer bonding, adhesive bonding,and eutectic bonding. The bonded structure can then be flipped upsidedown, such that semiconductor structure 1000 become above carriersubstrate 1030 (not shown in FIG. 14D).

As illustrated in FIG. 14D, silicon substrate 1002 of semiconductorstructure 1000 (shown in FIG. 14C) is removed to expose the undopedupper ends of semiconductor bodies 1012 of semiconductor structure 1000(used to be the lower ends before flipping over). In someimplementations, planarization processes (e.g., CMP) and/or etchingprocesses are performed to remove silicon substrate 1002 ofsemiconductor structure 1000 until being stopped by silicon oxide layer1004 and the upper ends of semiconductor bodies 1012 of semiconductorstructure 1000.

As illustrated in FIG. 14D, the exposed upper end of each semiconductorbody 1012 of semiconductor structure 1000, e.g., one of the two ends ofsemiconductor body 1012 in the vertical direction (the z-direction) thatis away from semiconductor structure 1400, is doped to form anothersource/drain 1023. In some implementations, an implantation processand/or thermal diffusion process are performed to dope P-type dopants orN-type dopants to exposed upper ends of semiconductor bodies 1012 ofsemiconductor structure 1000 to form sources/drains 1023. As a result,vertical transistors having semiconductor body 1012, sources/drains 1021and 1023, gate dielectric 1018, and the gate electrode (part ofconductive layer 1020) are formed thereby in semiconductor structure1000, as shown in FIG. 14D, according to some implementations. Asdescribed above, capacitors 1026 are thereby formed as well, and DRAMcells 1080 each having a multi-gate vertical transistor and a capacitorcoupled to the multi-gate vertical transistor are thereby formed ofsemiconductor structure 1000, as shown in FIG. 14D, according to someimplementations.

As illustrated in FIG. 14E, an interconnect layer 1032 can be formedabove DRAM cells 1080 in semiconductor structure 1000. Interconnectlayer 1032 can include interconnects of MEOL and/or BEOL in a pluralityof ILD layers to make electrical connections with DRAM cells 1080 insemiconductor structure 1000. In some implementations, interconnectlayer 1032 includes multiple ILD layers and interconnects therein formedin multiple processes. For example, the interconnects in interconnectlayers 1032 can include conductive materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, electroplating, electroless plating, or any combination thereof.Fabrication processes to form the interconnects can also includephotolithography, CMP, wet/dry etch, or any other suitable processes.The ILD layers can include dielectric materials deposited on siliconoxide layer 1004 by one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof. The ILD layers and interconnects illustrated in FIG. 14E can becollectively referred to as interconnect layer 1032.

As illustrated in FIG. 14E, a bonding layer 1036 is formed aboveinterconnect layer 1032 and DRAM cells 1080 in semiconductor structure1000. Bonding layer 1036 can include a plurality of bonding contacts1037 surrounded by dielectrics. In some implementations, a dielectriclayer (e.g., ILD layer) is deposited on the top surface of interconnectlayer 1032 by one or more thin film deposition processes including, butnot limited to, CVD, PVD, ALD, or any combination thereof. Bondingcontacts 1037 can then be formed through the dielectric layer and incontact with the interconnects in interconnect layer 1032 by firstpatterning contact holes through the dielectric layer using patterningprocess (e.g., photolithography and dry/wet etch of dielectric materialsin the dielectric layer). The contact holes can be filled with aconductor (e.g., Cu). In some implementations, filling the contact holesincludes depositing a barrier layer, an adhesion layer, and/or a seedlayer before depositing the conductor.

The bonded structure shown in FIG. 14E then can be bonded with asemiconductor structure including peripheral circuits in a face-to-facemanner, as described above in detail with respect to operation 2312 inFIG. 23 and FIGS. 10L and 10M.

In some implementations, the second and third semiconductor structuresare bonded after bonding the first and second semiconductor structures.For example, as shown in FIG. 23 , the second and third semiconductorstructures may be bonded after operation 2312, e.g., between operation2312 and operation 2314.

As illustrated in FIG. 15A, a bonded semiconductor structure 1500 isformed after the fabrication process shown in FIG. 10L by removingcarrier substrate 1030. A semiconductor structure 1000 is formedseparately (e.g., in parallel) using any suitable fabrication processesdisclosed herein (e.g., in FIGS. 10A-10H). For ease of description, thefabrication processes of forming semiconductor structures 1000 and 1500are not repeated.

As illustrated in FIG. 15A, semiconductor structure 1000 is flippedupside down. As illustrated in FIG. 15B, semiconductor structure 1000facing down is bonded with semiconductor structure 1500 facing up, e.g.,in a face-to-face manner, thereby forming a bonding interface 1502,using any suitable substrate/wafer bonding processes including, forexample, hybrid bonding (as described above in detail), anodic bonding,and fusion (direct) bonding. In one example, fusion bonding may beperformed between layers of silicon and silicon, silicon and siliconoxide, or silicon oxide and silicon oxide with pressure and heat. Inanother example, anodic bonding may be performed between layers ofsilicon oxide (in an ionic glass) and silicon with voltage, pressure,and heat. It is understood that depending on the bonding process,dielectric layers (e.g., silicon oxide layers) may be formed on one orboth sides of bonding interface 1502. For example, silicon oxide layersmay be formed on the top surfaces of semiconductor structures 1000 and1500 to allow SiO₂—SiO₂ bonding using fusion bonding. In someimplementations, common plate 1028 of semiconductor structure 1000 arein contact with common plate 1028 of semiconductor structure 1500 atbonding interface 1502 and thus, may be viewed as a common electrode(e.g., common ground plate) of both semiconductor structures 1000 and1500.

As illustrated in FIG. 15C, silicon substrate 1002 (shown in FIG. 15B)of semiconductor structure 1000 (on top of semiconductor structure 1500after bonding) is removed to expose the undoped upper ends ofsemiconductor bodies 1012 (used to be the lower ends before flippingover). In some implementations, planarization processes (e.g., CMP)and/or etching processes are performed to remove silicon substrate 1002of semiconductor structure 1000 until being stopped by silicon oxidelayer 1004 and the upper ends of semiconductor bodies 1012 ofsemiconductor structure 1000.

As illustrated in FIG. 15C, the exposed upper end of each semiconductorbody 1012 of semiconductor structure 1000, e.g., one of the two ends ofsemiconductor body 1012 in the vertical direction (the z-direction) thatis away from semiconductor structure 1500, is doped to form anothersource/drain 1023. In some implementations, an implantation processand/or thermal diffusion process are performed to dope P-type dopants orN-type dopants to exposed upper ends of semiconductor bodies 1012 ofsemiconductor structure 1000 to form sources/drains 1023. As a result,multi-gate vertical transistors having semiconductor body 1012,sources/drains 1021 and 1023, gate dielectric 1018, and the gateelectrode (part of conductive layer 1020) are formed thereby insemiconductor structure 1000, as shown in FIG. 15C, according to someimplementations. As described above, capacitors 1026 are thereby formedas well, and DRAM cells 1080 each having a multi-gate verticaltransistor and a capacitor coupled to the multi-gate vertical transistorare thereby formed of semiconductor structure 1400, as shown in FIG.15C, according to some implementations.

As illustrated in FIG. 15D, an interconnect layer 1032 can be formedabove DRAM cells 1080 in semiconductor structure 1000. Interconnectlayer 1032 can include interconnects of MEOL and/or BEOL in a pluralityof ILD layers to make electrical connections with DRAM cells 1080. Insome implementations, interconnect layer 1032 includes multiple ILDlayers and interconnects therein formed in multiple processes. Forexample, the interconnects in interconnect layers 1032 can includeconductive materials deposited by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, electroplating,electroless plating, or any combination thereof. Fabrication processesto form the interconnects can also include photolithography, CMP,wet/dry etch, or any other suitable processes. The ILD layers caninclude dielectric materials deposited on silicon oxide layer 1004 byone or more thin film deposition processes including, but not limitedto, CVD, PVD, ALD, or any combination thereof. The ILD layers andinterconnects illustrated in FIG. 15D can be collectively referred to asinterconnect layer 1032.

A pad-out interconnect layer then can be formed on the bonded structureshown in FIG. 15D as described above in detail with respect to operation2314 in FIG. 23 and FIG. 10M.

Method 2300 may also be implemented by the fabrication process describedin FIGS. 19A-19M and 22 to form 3D memory device 1700 depicted in FIG.17 having single-gate vertical transistors, as opposed to multiple-gatevertical transistors. Referring to FIG. 23 , method 2300 starts atoperation 2302, in which a peripheral circuit is formed on a firstsubstrate. The first substrate can include a silicon substrate. In someimplementations, an interconnect layer is formed above the peripheralcircuit. The interconnect layer can include a plurality of interconnectsin one or more ILD layers.

As illustrated in FIG. 19L, a plurality of transistors 1948 are formedon a silicon substrate 1944. Transistors 1948 can be formed by aplurality of processes including, but not limited to, photolithography,dry/wet etch, thin film deposition, thermal growth, implantation, CMP,and any other suitable processes. In some implementations, doped regionsare formed in silicon substrate 1944 by ion implantation and/or thermaldiffusion, which function, for example, as the source and drain oftransistors 1948. In some implementations, isolation regions (e.g.,STIs) are also formed in silicon substrate 1944 by wet/dry etch and thinfilm deposition. Transistors 1948 can form peripheral circuits 1946 onsilicon substrate 1944.

As illustrated in FIG. 19L, an interconnect layer 1950 can be formedabove peripheral circuits 1946 having transistors 1948. Interconnectlayer 1950 can include interconnects of MEOL and/or BEOL in a pluralityof ILD layers to make electrical connections with peripheral circuits1946. In some implementations, interconnect layer 1950 includes multipleILD layers and interconnects therein formed in multiple processes. Forexample, the interconnects in interconnect layers 1950 can includeconductive materials deposited by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, electroplating,electroless plating, or any combination thereof. Fabrication processesto form the interconnects can also include photolithography, CMP,wet/dry etch, or any other suitable processes. The ILD layers caninclude dielectric materials deposited by one or more thin filmdeposition processes including, but not limited to, CVD, PVD, ALD, orany combination thereof. The ILD layers and interconnects illustrated inFIG. 19L can be collectively referred to as interconnect layer 1950.

Method 2300 proceeds to operation 2304, as illustrated in FIG. 23 , inwhich a first bonding layer is formed above the peripheral circuit (andthe interconnect layer). The first bonding layer can include a firstbonding contact. As illustrated in FIG. 19L, a bonding layer 1952 isformed above interconnect layer 1950 and peripheral circuits 1946.Bonding layer 1952 can include a plurality of bonding contactssurrounded by dielectrics. In some implementations, a dielectric layer(e.g., ILD layer) is deposited on the top surface of interconnect layer1950 by one or more thin film deposition processes including, but notlimited to, CVD, PVD, ALD, or any combination thereof. The bondingcontacts then can be formed through the dielectric layer and in contactwith the interconnects in interconnect layer 1950 by first patterningcontact holes through the dielectric layer using patterning process(e.g., photolithography and dry/wet etch of dielectric materials in thedielectric layer). The contact holes can be filled with a conductor(e.g., Cu). In some implementations, filling the contact holes includesdepositing a barrier layer, an adhesion layer, and/or a seed layerbefore depositing the conductor.

Method 2300 proceeds to operation 2306, as illustrated in FIG. 23 , inwhich an array of memory cells each including a vertical transistor anda storage unit is formed on a second substrate. The second substrate caninclude a carrier substrate. The storage unit can include a capacitor ora PCM element. In some implementations, a capacitor is formed to becoupled to the vertical transistor in the respective memory cell.

For example, FIG. 25 illustrates a flowchart of a method 2500 forforming another array of memory cells each including a verticaltransistor, according to some aspects of the present disclosure. Atoperation 2502 in FIG. 25 , a semiconductor pillar extending verticallyin a substrate is formed. The substrate can be a silicon substrate. Insome implementations, to form the semiconductor pillar, the substrate isetched in a first lateral direction to form a plurality of firsttrenches, a dielectric is deposited to fill the first trenches to formsecond trench isolations, and the substrate and the second trenchisolations are etched in a second lateral direction to form a pluralityof second trenches and the semiconductor pillar surrounded by the secondtrenches and the second trench isolations. In some implementations, adielectric is deposited to partially fill the second trenches.

As illustrated in FIG. 19A, a plurality of parallel trenches 1904 areformed in the y-direction (e.g., the bit line direction) to form aplurality of parallel semiconductor walls 1905 in the y-direction. Insome implementations, a lithography process is performed to patterntrenches 1904 and semiconductor walls 1905 using an etch mask (e.g., aphotoresist mask and/or a hard mask), for example, based on the designof bit lines, and one or more dry etching and/or wet etching processes,such as RIE, are performed to etch trenches 1904 in a silicon substrate1902. Thus, semiconductor wall 1905 extending vertically in siliconsubstrate 1902 can be formed. The bottom of semiconductor wall 1905 canbe below the top surface of silicon substrate 1902. Since semiconductorwalls 1905 are formed by etching silicon substrate 1902, semiconductorwalls 1905 can have the same material as silicon substrate 1902, such assingle crystalline silicon. FIG. 19A illustrates both the side view (inthe top portion of FIG. 19A) of a cross-section along the x-direction(the word line direction, e.g., in the BB plane) and the plan view (inthe bottom portion of FIG. 19A) of a cross-section in the x-y plane(e.g., in the AA plane through semiconductor walls 1905). The samedrawing layout is arranged in FIG. 19B as well.

As illustrated in FIG. 19B, trench isolations 1908 (e.g., STIs) areformed in trenches 1904. In some implementations, a dielectric, such assilicon oxide, is deposited to fully fill trenches 1904 using one ormore thin film deposition processes including, but not limited to, CVD,PVD, ALD, or any combination thereof. In some implementations, aplanarization process, such as CMP, is performed to remove excessdielectric deposited beyond the top surface of silicon substrate 1902.As a result, parallel semiconductor walls 1905 can be separated bytrench isolations 1908.

As illustrated in FIG. 19C, a plurality of parallel trenches 1910 areformed in the x-direction (e.g., the word line direction) to form anarray of semiconductor pillars 1906 each extending vertically in siliconsubstrate 1902. In some implementations, a lithography process isperformed to pattern trenches 1910 to be perpendicular to trenchisolations 1908 using an etch mask (e.g., a photoresist mask and/or ahard mask), for example, based on the design of word lines, and one ormore dry etching and/or wet etching processes, such as RIE, areperformed on silicon substrate 1902 and trench isolation 1908 to etchtrenches 1910 in silicon substrate 1902. As a result, semiconductorwalls 1905 (shown in FIG. 19B) can be cut by trenches 1910 to form anarray of semiconductor pillars 1906 each extending vertically in siliconsubstrate 1902. The bottom of semiconductor pillar 1906 can be below thetop surface of silicon substrate 1902. Since semiconductor pillars 1906are formed by etching silicon substrate 1902, semiconductor pillars 1906can have the same material as silicon substrate 1902, such as singlecrystalline silicon. FIG. 19C illustrates both the side view (in the topportion of FIG. 19C) of a cross-section along the y-direction (the bitline direction, e.g., in the CC plane) and the plan view (in the bottomportion of FIG. 19C) of a cross-section in the x-y plane (e.g., in theAA plane through semiconductor pillars 1906). The same drawing layout isarranged in FIGS. 19C-19G as well.

As illustrated in FIG. 19C, a dielectric layer 1912 is formed at thebottom of trench 1910, for example, by depositing a dielectric, such assilicon oxide, to partially fill trench 1910, using one or more thinfilm deposition processes including, but not limited to, CVD, PVD, ALD,or any combination thereof. The deposition conditions, such asdeposition rate and/or time, can be controlled to control the thicknessof dielectric layer 1912 and avoid fully filling trench 1910. As aresult, the bottom surface of trenches 1910 can be elevated to be abovethe bottom surface of semiconductor pillars 1906. As shown in the planview, the two opposite sides of semiconductor pillar 1906 in they-direction are exposed by trenches 1910, and the other two oppositesides of semiconductor pillar 1906 in the x-direction are in contactwith trench isolation 1908. In other words, semiconductor pillar 1906 issurrounded by trenches 1910 and trenches isolations 1908.

At operation 2504 in FIG. 25 , gate structures in contact with oppositesides of the semiconductor pillar are formed. In some implementations,to form the gate structures, gate dielectrics are formed over theopposite sides of the semiconductor pillar, and gate electrodes areformed over the gate dielectrics. In some implementations, to form thegate electrodes, conductive layers are deposited over the gatedielectrics, and the conductive layers are etched back.

As illustrated in FIG. 19D, gate dielectrics 1914 are formed over thetwo opposite sides of semiconductor pillars 1906 in the bit linedirection (they-direction) exposed from trenches 1910. As shown in theplan view, gate dielectrics 1914 can be parts of a continuous dielectriclayer formed over sidewalls of each row of semiconductor pillars 1906and trench isolations 1908. In some implementations, gate dielectric1914 is formed by depositing a layer of dielectric, such as siliconoxide, over the sidewalls of trenches 1910 using one or more thin filmdeposition processes including, but not limited to, CVD, PVD, ALD, orany combination thereof, without fully filling trenches 1910. It isunderstood that in some examples, gate dielectrics 1914 may not be partsof a continuous dielectric layer. For example, a wet oxidation and/or adry oxidation process, such as in situ steam generation (ISSG)oxidation, is performed to form native oxide (e.g., silicon oxide) onsemiconductor pillar 1906 (e.g., single crystalline silicon) as gatedielectric 1914.

As illustrated in FIG. 19D, conductive layers 1916 are formed over gatedielectrics 1914 in trenches 1910. In some implementations, conductivelayers 1916 are formed by depositing one or more conductive materials,such as metal and/or metal compounds (e.g., W and TiN), over gatedielectrics 1914 using one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof, to partially fill trenches 1910. For example, layers of TiN andW may be sequentially deposited to form conductive layer 1916. Aplanarization process, e.g., CMP, can be performed to remove the excessconductive materials over the top surface of silicon substrate 1902.

As illustrated in FIG. 19E, in some implementations, conductive layers1916 are etched back, for example, using dry etch and/or wet etch (e.g.,RIE), to form dents, such that the upper ends of conductive layers 1916are below the top surface of semiconductor pillars 1906. In someimplementations, as gate dielectrics 1914 are not etched back, the upperends of conductive layers 1916 are below the upper ends of gatedielectrics 1914 as well, which are flush with the top surface ofsemiconductor pillars 1906. As a result, etched-back conductive layers1916 can become word lines each extending in the word line direction(the x-direction), and parts of etched-back conductive layers 1916 thatare facing semiconductor pillars 1906 can become gate electrodes. Gatestructures each including a respective gate dielectric 1914 over theexposed side of semiconductor pillar 1906 and a respective gateelectrode (part of conductive layer 1916) over gate dielectric 1914 canbe formed thereby. In some implementations, as shown in FIG. 19E, adielectric layer 1918 is formed in the remaining space of trenches 1910as well as the dents (not shown) resulting from etching back ofconductive layers 1916, for example, by depositing a dielectric, such assilicon oxide, using one or more thin film deposition processesincluding, but not limited to, CVD, PVD, ALD, or any combinationthereof. It is understood that depending on the pitches of the wordlines (the dimension of trenches 1910), air gaps may be formed indielectric layer 1918.

At operation 2506 in FIG. 25 , a first trench isolation extendingvertically through the semiconductor pillar is formed to separate thesemiconductor pillar into semiconductor bodies each in contact with arespective one of the gate structures. In some implementations, to formthe first trench, the semiconductor pillar is etched in the secondlateral direction to form a third trench, and a dielectric is depositedto fill the third trench.

As illustrated in FIG. 19F, a plurality of parallel trenches 1922 in thex-direction (e.g., the word line direction) are formed to form an arrayof semiconductor bodies 1920 each extending vertically in siliconsubstrate 1902. In some implementations, a lithography process isperformed to pattern trenches 1922 on semiconductor pillars 1906 (shownin FIG. 19E) using an etch mask (e.g., a photoresist mask and/or a hardmask), and one or more dry etching and/or wet etching processes, such asRIE, are performed on semiconductor pillars 1906 and trench isolation1908 to etch trenches 1922. The etching can be controlled such thatbottom of trenches 1922 is flush with or below the bottom surface ofsemiconductor pillars 1906. As a result, each semiconductor pillar 1906can be separated by a respective trench 1922 into two semiconductorbodies 1920 in the y-direction. Since semiconductor bodies 1920 areformed by etching silicon substrate 1902, semiconductor bodies 1920 canhave the same material as silicon substrate 1902, such as singlecrystalline silicon. As shown in the plan view, each semiconductor body1920 can be in contact with a gate structure having gate dielectric 1914and gate electrode 1916 on one side of semiconductor body 1920 in they-direction. The opposite side of semiconductor body 1920 can be exposedby trench 1922. In some implementations, a mirror-symmetric arrangementof two semiconductor bodies 1920 and two gate structures thereof isachieved by forming trench 1922 across the middle of a respectivesemiconductor pillar 1906.

As illustrated in FIG. 19G, a trench isolation 1926 is formed in trench1922 (shown in FIG. 19F), for example, by depositing a dielectric, suchas silicon oxide, to fill trench 1922, using one or more thin filmdeposition processes including, but not limited to, CVD, PVD, ALD, orany combination thereof. A planarization process can be performed toremove excess dielectric over the top surface of silicon substrate 1902.It is understood that depending on the pitches of the semiconductorbodies 1920 (the dimension of trenches 1922), air gaps may be formed intrench isolation 1926. As shown in the plan view, parallel trenchisolations 1926 each extending in the x-direction can form an array ofsemiconductor bodies 1920 in which a single side is in contact with agate structure having gate dielectric 1914 and gate electrode 1916.

At operation 2508 in FIG. 25 , first ends of the semiconductor bodiesaway from the substrate are doped. As illustrated in FIG. 19G, theexposed upper end of each semiconductor body 1920, e.g., one of the twoends of semiconductor body 1920 in the vertical direction (thez-direction) that is away from silicon substrate 1902, is doped to forma source/drain 1924 (e.g., a source terminal of a vertical transistor).In some implementations, an implantation process and/or thermaldiffusion process are performed to dope P-type dopants or N-type dopantsto exposed upper ends of semiconductor bodies 1920 to formsources/drains 1924. In some implementations, a silicide layer is formedon source/drain 1924 by performing a silicidation process at the exposedupper ends of semiconductor bodies 1920.

At operation 2510 in FIG. 25 , storage units in contact with thesemiconductor bodies, e.g., the doped first ends thereof, are formed.The storage unit can include a capacitor or a PCM element. In someimplementations, to form a storage unit that is a capacitor, a firstelectrode is formed on the doped first end of the semiconductor body, acapacitor dielectric is formed on the first electrode, and a secondelectrode is formed on the capacitor dielectric.

As illustrated in FIG. 19H, one or more ILD layers are formed over thetop surface of silicon substrate 1902, for example, by depositingdielectrics using one or more thin film deposition processes including,but not limited to, CVD, PVD, ALD, or any combination thereof. Capacitorcontacts 1928, first electrodes, capacitor dielectrics, and secondelectrodes of capacitors 1930, and a common plate 1932 are subsequentlyformed in the ILD layers to be coupled to semiconductor bodies 1920. Insome implementations, capacitor contact 1928 is formed on a respectivesource/drain 1924, e.g., the doped upper end of a respectivesemiconductor body 1920 by patterning and etching an electrode holealigned with respective source/drain 1924 using lithography and etchingprocesses and depositing conductive materials to fill the electrode holeusing thin film deposition processes. In some implementations, commonplate 1932 is formed on the second electrodes of capacitors 1930 bypatterning and etching an electrode trench aligned with capacitors 1930using lithography and etching processes and depositing conductivematerials to fill the electrode trench using thin film depositionprocesses.

At operation 2512 in FIG. 25 , the substrate is thinned to expose secondends of the semiconductor bodies opposite to the first end. Asillustrated in FIG. 19I, a carrier substrate 1934 (a.k.a. a handlesubstrate) is bonded onto the front side of silicon substrate 1902 onwhich devices are formed using any suitable bonding processes, such asanodic bonding, fusion bonding, transfer bonding, adhesive bonding, andeutectic bonding. The bonded structure can then be flipped upside down,such that silicon substrate 1902 become above carrier substrate 1934.

As illustrated in FIG. 19J, silicon substrate 1902 (shown in FIG. 19I)is thinned to expose the undoped upper ends of semiconductor bodies 1920(used to be the lower ends before flipping over). In someimplementations, planarization processes (e.g., CMP) and/or etchingprocesses are performed to thin silicon substrate 1902 until beingstopped by dielectric layer 1918 and the upper ends of semiconductorbodies 1920.

At operation 2514 in FIG. 25 , the exposed second ends of thesemiconductor bodies are doped. As illustrated in FIG. 19J, the exposedupper end of each semiconductor body 1920, e.g., one of the two ends ofsemiconductor body 1920 in the vertical direction (the z-direction) thatis away from carrier substrate 1934, is doped to form anothersource/drain 1936 (e.g., a drain terminal of the vertical transistor).In some implementations, an implantation process and/or thermaldiffusion process are performed to dope P-type dopants or N-type dopantsto exposed upper ends of semiconductor bodies 1920 to formsources/drains 1936. In some implementations, a silicide layer is formedon source/drain 1936 by performing a silicidation process at the exposedupper ends of semiconductor bodies 1920. As a result, verticaltransistors having semiconductor body 1920, sources/drains 1924 and1936, gate dielectric 1914, and the gate electrode (part of conductivelayer 1916) are formed thereby, as shown in FIG. 19J, according to someimplementations. As described above, capacitors 1930 each having thefirst and second electrodes and the capacitor dielectric are therebyformed as well, and DRAM cells 1980 each having a single-gate verticaltransistor and a capacitor coupled to the single-gate verticaltransistor are thereby formed, as shown in FIG. 19J, according to someimplementations.

Referring back to FIG. 23 , method 2300 proceeds to operation 2308, asillustrated in FIG. 23 , in which an interconnect layer including bitlines is formed above the array of memory cells. As illustrated in FIG.19K, an interconnect layer 1940 can be formed above DRAM cells 1980.Interconnect layer 1940 can include interconnects of MEOL and/or BEOL ina plurality of ILD layers to make electrical connections with DRAM cells1980. In some implementations, interconnect layer 1940 includes multipleILD layers and interconnects therein formed in multiple processes. Forexample, the interconnects in interconnect layers 1940 can includeconductive materials deposited by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, electroplating,electroless plating, or any combination thereof. Fabrication processesto form the interconnects can also include photolithography, CMP,wet/dry etch, or any other suitable processes. The ILD layers caninclude dielectric materials deposited using one or more thin filmdeposition processes including, but not limited to, CVD, PVD, ALD, orany combination thereof. The ILD layers and interconnects illustrated inFIG. 19K can be collectively referred to as interconnect layer 1940.

As shown in FIG. 25 , at operation 2516, to form the interconnect layer,a bit line is formed on the doped second end. As illustrated in FIG.19K, bit line 1938 can be formed on sources/drains 1936 by patterningand etching a trench aligned with respective source/drain 1936 usinglithography and etching processes and depositing conductive materials tofill the trench using thin film deposition processes. In someimplementations, forming bit line 1938 includes depositing a metal layeronto the exposed end of semiconductor body 1920. As a result, bit line1938 and capacitor 1930 can be formed on opposite sides of semiconductorbody 1920 and coupled to opposite ends of semiconductor body 1920. It isunderstood that additional local interconnects, such as word linecontacts, capacitor contacts (e.g., a conductor), and bit line contacts(not shown in FIG. 19K, e.g., a metal silicide contact) may be similarlyformed as well. In some implementations, the bit line contact (e.g., ametal silicide contact) is formed on the exposed end of semiconductorbody 1820, and bit line 1938 is formed on the bit line contact.

Method 2300 proceeds to operation 2310, as illustrated in FIG. 23 , inwhich a second bonding layer is formed above the array of memory cellsand the interconnect layer. The second bonding layer can include asecond bonding contact. As illustrated in FIG. 19K, a bonding layer 1942is formed above interconnect layer 1940 and DRAM cells 1980. Bondinglayer 1942 can include a plurality of bonding contacts surrounded bydielectrics. In some implementations, a dielectric layer (e.g., ILDlayer) is deposited on the top surface of interconnect layer 1940 by oneor more thin film deposition processes including, but not limited to,CVD, PVD, ALD, or any combination thereof. The bonding contacts can thenbe formed through the dielectric layer and in contact with theinterconnects in interconnect layer 1940 by first patterning contactholes through the dielectric layer using patterning process (e.g.,photolithography and dry/wet etch of dielectric materials in thedielectric layer). The contact holes can be filled with a conductor(e.g., Cu). In some implementations, filling the contact holes includesdepositing a barrier layer, an adhesion layer, and/or a seed layerbefore depositing the conductor.

Method 2300 proceeds to operation 2312, as illustrated in FIG. 23 , inwhich the first semiconductor structure and the second semiconductorstructure are bonded in a face-to-face manner, such that the first arrayof memory cells is coupled to the peripheral circuit across a bondinginterface. The bonding can include hybrid bonding. In someimplementations, the first bonding contact is in contact with the secondbonding contact at the bonding interface after the bonding. In someimplementations, the second semiconductor structure is above the firstsemiconductor structure after the bonding. In some implementations, thefirst semiconductor structure is above the second semiconductorstructure after the bonding.

As illustrated in FIG. 19L, carrier substrate 1934 and components formedthereon (e.g., DRAM cells 1980) are flipped upside down. As illustratedin FIG. 19L, bonding layer 1942 facing down is bonded with bonding layer1952 facing up, e.g., in a face-to-face manner, thereby forming abonding interface 1954. In some implementations, a treatment process,e.g., a plasma treatment, a wet treatment, and/or a thermal treatment,is applied to the bonding surfaces prior to the bonding. Although notshown in FIG. 19L, silicon substrate 1944 and components formed thereon(e.g., peripheral circuits 1946) can be flipped upside down, and bondinglayer 1952 facing down can be bonded with bonding layer 1942 facing up,e.g., in a face-to-face manner, thereby forming bonding interface 1954.After the bonding, the bonding contacts in bonding layer 1942 and thebonding contacts in bonding layer 1952 are aligned and in contact withone another, such that DRAM cells 1980 can be electrically connected toperipheral circuits 1946 across bonding interface 1954. It is understoodthat in the bonded chip, DRAM cells 1980 may be either above or belowperipheral circuits 1946. Nevertheless, bonding interface 1954 can beformed vertically between peripheral circuits 1946 and DRAM cells 1980after the bonding.

Method 2300 proceeds to operation 2314, as illustrated in FIG. 23 , inwhich a pad-out interconnect layer is formed on the backside of thefirst semiconductor structure or the second semiconductor structure. Asillustrated in FIG. 19M, a pad-out interconnect layer 1956 is formedabove on the backside of carrier substrate 1934. Pad-out interconnectlayer 1956 can include interconnects, such as pad contacts 1958, formedin one or more ILD layers. Pad contacts 1958 can include conductivematerials including, but not limited to, W, Co, Cu, Al, doped silicon,silicides, or any combination thereof. The ILD layers can includedielectric materials including, but not limited to, silicon oxide,silicon nitride, silicon oxynitride, low-k dielectrics, or anycombination thereof. In some implementations, after the bonding,contacts 1960 are formed extending vertically through carrier substrate1934, for example, by wet/dry etching processes, followed by depositingconductive materials. Contacts 1960 can be in contact with theinterconnects in pad-out interconnect layer 1956. It is understood thatin some examples, carrier substrate 1934 may be thinned or removed afterbonding and prior to forming pad-out interconnect layer 1956 andcontacts 1960, for example, using planarization processes and/or etchingprocesses.

Although not shown, it is understood that in some examples, pad-outinterconnect layer 1956 may be formed above on the backside of siliconsubstrate 1944, and contacts 1960 may be formed extending verticallythrough silicon substrate 1944. Silicon substrate 1944 may be thinnedprior to forming pad-out interconnect layer 1956 and contacts 1960, forexample, using planarization processes and/or etching processes.Although not shown, it is further understood that in some examples, thefabrication processes described with respect to FIGS. 14A-14E and15A-15D may be applied to form another array of DRAM cells 1980 inanother semiconductor structure bonded to the semiconductor structureincluding DRAM cells 1980 described above with respect to FIGS. 19A-19M.

Method 2300 may further be implemented by the fabrication processdescribed in FIGS. 22A-22M and 26 to form 3D memory device 2100 depictedin FIG. 21 having double-gate vertical transistors, as opposed tosingle-gate vertical transistors. Referring to FIG. 23 , method 2300starts at operation 2302, in which a peripheral circuit is formed on afirst substrate. The first substrate can include a silicon substrate. Insome implementations, an interconnect layer is formed above theperipheral circuit. The interconnect layer can include a plurality ofinterconnects in one or more ILD layers.

As illustrated in FIG. 22L, a plurality of transistors 2248 are formedon a silicon substrate 2244. Transistors 2248 can be formed by aplurality of processes including, but not limited to, photolithography,dry/wet etch, thin film deposition, thermal growth, implantation, CMP,and any other suitable processes. In some implementations, doped regionsare formed in silicon substrate 2244 by ion implantation and/or thermaldiffusion, which function, for example, as the source and drain oftransistors 2248. In some implementations, isolation regions (e.g.,STIs) are also formed in silicon substrate 2244 by wet/dry etch and thinfilm deposition. Transistors 2248 can form peripheral circuits 2246 onsilicon substrate 2244.

As illustrated in FIG. 22L, an interconnect layer 2250 can be formedabove peripheral circuits 2246 having transistors 2248. Interconnectlayer 2250 can include interconnects of MEOL and/or BEOL in a pluralityof ILD layers to make electrical connections with peripheral circuits2246. In some implementations, interconnect layer 2250 includes multipleILD layers and interconnects therein formed in multiple processes. Forexample, the interconnects in interconnect layers 2250 can includeconductive materials deposited by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, electroplating,electroless plating, or any combination thereof. Fabrication processesto form the interconnects can also include photolithography, CMP,wet/dry etch, or any other suitable processes. The ILD layers caninclude dielectric materials deposited by one or more thin filmdeposition processes including, but not limited to, CVD, PVD, ALD, orany combination thereof. The ILD layers and interconnects illustrated inFIG. 22L can be collectively referred to as interconnect layer 2250.

Method 2300 proceeds to operation 2304, as illustrated in FIG. 23 , inwhich a first bonding layer is formed above the peripheral circuit (andthe interconnect layer). The first bonding layer can include a firstbonding contact. As illustrated in FIG. 22L, a bonding layer 2252 isformed above interconnect layer 2250 and peripheral circuits 2246.Bonding layer 2252 can include a plurality of bonding contactssurrounded by dielectrics. In some implementations, a dielectric layer(e.g., ILD layer) is deposited on the top surface of interconnect layer2250 by one or more thin film deposition processes including, but notlimited to, CVD, PVD, ALD, or any combination thereof. The bondingcontacts can then be formed through the dielectric layer and in contactwith the interconnects in interconnect layer 2250 by first patterningcontact holes through the dielectric layer using patterning process(e.g., photolithography and dry/wet etch of dielectric materials in thedielectric layer). The contact holes can be filled with a conductor(e.g., Cu). In some implementations, filling the contact holes includesdepositing a barrier layer, an adhesion layer, and/or a seed layerbefore depositing the conductor.

Method 2300 proceeds to operation 2306, as illustrated in FIG. 23 , inwhich an array of memory cells each including a vertical transistor anda storage unit is formed on a second substrate. The second substrate caninclude a carrier substrate. The storage unit can include a capacitor ora PCM element. In some implementations, a capacitor is formed to becoupled to the vertical transistor in the respective memory cell.

For example, FIG. 26 illustrates a flowchart of a method 2600 forforming still another array of memory cells each including a verticaltransistor, according to some aspects of the present disclosure. Atoperation 2602 in FIG. 26 , a semiconductor body extending vertically ina substrate is formed. The substrate can be an SOI substrate including ahandle layer, a buried oxide layer, and a device layer. In someimplementations, to form the semiconductor body, the handle layer isetched in a first lateral direction to form first trenches, and thehandle layer is etched in a second lateral direction to form secondtrenches, such that the two opposite sides of the semiconductor body isexposed by the second trenches. In some implementations, a dielectric isdeposited to partially fill the second trenches.

As illustrated in FIG. 22A, a plurality of parallel trenches 2204 areformed in the y-direction (e.g., the bit line direction) to form aplurality of parallel semiconductor walls 2205 in the y-direction. Insome implementations, a lithography process is performed to patterntrenches 2204 and semiconductor walls 2205 using an etch mask (e.g., aphotoresist mask and/or a hard mask), for example, based on the designof bit lines, and one or more dry etching and/or wet etching processes,such as RIE, are performed to etch trenches 1904 in an SOI substrate2201. Thus, semiconductor wall 1905 extending vertically in SOIsubstrate 2201 can be formed. As shown in FIG. 22A, SOI substrate 2201can include a handle layer 2202, a buried oxide layer 2203 on handlelayer 2202, and a device layer 2209 on buried oxide layer 2203. In someimplementations, buried oxide layer 2203 includes silicon oxide, anddevice layer 2209 includes single crystalline silicon. In someimplementations, to form trenches 2204, device layer 2209 is etchedusing RIE, stopped at buried oxide layer 2203. That is, buried oxidelayer 2203 can serve as the etch stop layer. It is understood that insome examples, device layer 2209 may not be part of an SOI substrate,but transferred and bonded onto buried oxide layer 2203 from anothersilicon substrate (not shown, e.g., an SOI substrate). It is alsounderstood that in some examples, SOI substrate 2201 may be replacedwith a silicon substrate, such as silicon substrate 1902 in FIG. 19A;the etching of trenches 2204 may not be stopped by buried oxide layer2203, but by controlling the etching rate and/or duration, for example,as shown in FIG. 19A

Nevertheless, the bottom of semiconductor wall 2205 can be below the topsurface of SOI substrate 2201. Since semiconductor walls 2205 are formedby etching device layer 2209 of SOI substrate 2201, semiconductor walls2205 can have the same material as device layer 2209 of SOI substrate2201, such as single crystalline silicon. FIG. 22A illustrates both theside view (in the top portion of FIG. 22A) of a cross-section along thex-direction (the word line direction, e.g., in the BB plane) and theplan view (in the bottom portion of FIG. 22A) of a cross-section in thex-y plane (e.g., in the AA plane through semiconductor walls 2205).

As illustrated in FIG. 22B, a plurality of parallel trenches 2210 areformed in the x-direction (e.g., the word line direction) to form anarray of semiconductor bodies 2206 each extending vertically in SOIsubstrate 2201. In some implementations, a lithography process isperformed to pattern trenches 2210 to be perpendicular to trenches 2204using an etch mask (e.g., a photoresist mask and/or a hard mask), forexample, based on the design of word lines, and one or more dry etchingand/or wet etching processes, such as RIE, are performed to etchtrenches 2210 in device layer 2209 of SOI substrate 2201. As a result,semiconductor walls 2205 (shown in FIG. 22A) can be cut by trenches 2210to form an array of semiconductor bodies 2206 each extending verticallyin SOI substrate 2201. The bottom of semiconductor body 2206 can bebelow the top surface of SOI substrate 2201. Since semiconductor bodies2206 are formed by etching device layer 2209 of SOI substrate 2201,semiconductor bodies 2206 can have the same material as device layer2209 of SOI substrate 2201, such as single crystalline silicon. FIG. 22Billustrates both the side view (in the top portion of FIG. 22B) of across-section along the y-direction (the bit line direction, e.g., inthe CC plane) and the plan view (in the bottom portion of FIG. 22B) of across-section in the x-y plane (e.g., in the AA plane throughsemiconductor bodies 2206). The same drawing layout is arranged in FIGS.22C-22G as well.

It is understood that in some examples, trenches 2204 and 2210 may beformed in the same process, as opposed to two consecutive processes. Forexample, the same lithography process may be used to pattern andtrenches 2204 and 2210, followed by the same etching process. It is alsounderstood that in some examples, trenches 2210 in the word linedirection may be formed prior to the formation of trenches 2204 in thebit line direction. Nevertheless, after the formation of trenches 2204and 2210, semiconductor body 2206 can be formed, and all four sides ofsemiconductor body 2206 can be exposed by trenches 2204 and 2210. Insome implementations, two opposite sides of semiconductor body 2206 inthe word line direction are exposed by trenches 2204, and two oppositesides of semiconductor body 2206 in the bit line direction are exposedby trenches 2210, As shown in the plan view. In other words,semiconductor body 2206 can be surrounded by trenches 2204 and 2210.

As illustrated in FIG. 22C, a dielectric layer 2212 is formed at thebottom of trench 2210 (and trench 2204 in some examples), for example,by depositing a dielectric, such as silicon oxide, to partially filltrench 2210, using one or more thin film deposition processes including,but not limited to, CVD, PVD, ALD, or any combination thereof. Thedeposition conditions, such as deposition rate and/or time, can becontrolled to control the thickness of dielectric layer 2212 and avoidfully filling trench 2210. As a result, the bottom surface of trenches2210 can be elevated to be above the bottom surface of semiconductorbodies 2206.

At operation 2604 in FIG. 26 , a gate structure in contact with oppositesides of the semiconductor body is formed. In some implementations, toform the gate structure, a gate dielectric is formed over the oppositesides of the semiconductor body, and a gate electrode is formed over thegate dielectric. In some implementations, to form the gate electrode, aconductive layer is deposited over the gate dielectric, and theconductive layer is etched back.

As illustrated in FIG. 22D, a gate dielectric 2214 is formed over thetwo opposite sides of semiconductor body 2206 in the bit line direction(the y-direction) exposed from trenches 2210. As shown in the plan view,gate dielectrics 2214 can be parts of a continuous dielectric layerformed over sidewalls of each row of semiconductor bodies 2206. In someimplementations, gate dielectric 2214 is formed by depositing a layer ofdielectric, such as silicon oxide, over the sidewalls and top surfacesof semiconductor bodies 2206 using one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, or anycombination thereof, without fully filling trenches 2210. It isunderstood that in some examples, gate dielectrics 2214 may not be partsof a continuous dielectric layer. For example, a wet oxidation and/or adry oxidation process, such as ISSG oxidation, is performed to formnative oxide (e.g., silicon oxide) on semiconductor bodies 2206 (e.g.,single crystalline silicon) as gate dielectric 2214.

As illustrated in FIG. 22D, a conductive layer 2216 is formed over gatedielectrics 2214. In some implementations, conductive layers 2216 areformed by depositing one or more conductive materials, such as metaland/or metal compounds (e.g., W and TiN), over gate dielectrics 2214using one or more thin film deposition processes including, but notlimited to, CVD, PVD, ALD, or any combination thereof, to partially filltrenches 2210. For example, layers of TiN and W may be sequentiallydeposited to form conductive layer 2216. As shown in the side view,conductive layers 2216 can be a continuous layer in the bit linedirection as the conductive materials can be deposited over the topsurfaces of semiconductor bodies 2206 and the bottom surfaces oftrenches 2210.

As illustrated in FIG. 22E, in some implementations, parts of conductivelayers 2216 at the bottom surfaces of trenches 2210 are removed toseparate the continuous conductive layers 2216 into discrete pieces inthe bit line direction, for example, using dry etch and/or we etch(e.g., RIE) to form cuts 2211 on the bottom surfaces of trenches 2210.In some implementations, parts of conductive layers 2216 at the topsurfaces of semiconductor bodies 2206 are removed as well by the sameetching process to expose gate dielectrics 2214 at the top surfaces ofsemiconductor bodies 2206.

As illustrated in FIG. 22F, in some implementations, trench isolations2218 are formed in trench 2210 (shown in FIG. 22E), for example, bydepositing a dielectric, such as silicon oxide, to fill trench 2210,using one or more thin film deposition processes including, but notlimited to, CVD, PVD, ALD, or any combination thereof. A planarizationprocess (e.g., CMP and/or etching process) can be performed to removeexcess dielectric over the top surface of semiconductor bodies 2206. Insome implementations, the planarization process removes parts of gatedielectrics 2214 over the top surfaces of semiconductor bodies 2206 aswell to expose the top surfaces of semiconductor bodies 2206. It isunderstood that depending on the pitches of the semiconductor bodies2206 (the dimension of trenches 2210), air gaps may be formed in trenchisolation 2218. As shown in the plan view, the deposition of thedielectric may fill the remaining spaces of trenches 2204 (shown in FIG.22E) as well to form isolations 2219 between adjacent semiconductorbodies 2206 in the word line direction (e.g., in the same row).

As illustrated in FIG. 22G, in some implementations, conductive layers2216 are etched back, for example, using dry etch and/or wet etch (e.g.,RIE), to form dents, such that the upper ends of conductive layers 2216are below the top surface of semiconductor bodies 1906. In someimplementations, as gate dielectrics 2214 are not etched back, the upperends of conductive layers 2216 are below the upper ends of gatedielectrics 2214 as well, which are flush with the top surface ofsemiconductor bodies 2206. As a result, etched-back conductive layers2216 can become word lines each extending in the word line direction(the x-direction), and parts of etched-back conductive layers 2216 thatare facing semiconductor bodies 2206 can become gate electrodes. Gatestructures each including a respective gate dielectric 2214 over theexposed two opposite sides (in the bit line direction) of semiconductorbody 2206 and a respective gate electrode (part of conductive layer2216) over gate dielectric 2214 can be formed thereby.

At operation 2608 in FIG. 26 , a first end of the semiconductor bodyaway from the substrate is doped. As illustrated in FIG. 22G, theexposed upper end (top surface) of each semiconductor body 2206, e.g.,one of the two ends of semiconductor body 2206 in the vertical direction(the z-direction) that is away from handle layer 2202 of SOI substrate2201, is doped to form a source/drain 2224 (e.g., a source terminal of avertical transistor). In some implementations, an implantation processand/or thermal diffusion process are performed to dope P-type dopants orN-type dopants to exposed upper ends of semiconductor bodies 2206 toform sources/drains 2224. In some implementations, a silicide layer isformed on source/drain 2224 by performing a silicidation process at theexposed upper ends of semiconductor bodies 2206.

At operation 2608 in FIG. 26 , a storage unit in contact with thesemiconductor body, e.g., the doped first end thereof, is formed. Thestorage unit can include a capacitor or a PCM element. In someimplementations, to form a storage unit that is a capacitor, a firstelectrode is formed on the doped first end of the semiconductor body, acapacitor dielectric is formed on the first electrode, and a secondelectrode is formed on the capacitor dielectric.

As illustrated in FIG. 22H, one or more ILD layers are formed over thetop surface of semiconductor bodies 2206, for example, by depositingdielectrics using one or more thin film deposition processes including,but not limited to, CVD, PVD, ALD, or any combination thereof. Capacitorcontacts 2228, first electrodes, capacitor dielectrics, and secondelectrodes of capacitors 2230, and a common plate 2232 are subsequentlyformed in the ILD layers to be coupled to semiconductor bodies 2206. Insome implementations, each capacitor contact 2228 is formed on arespective source/drain 2224, e.g., the doped upper end of a respectivesemiconductor body 2206 by patterning and etching an electrode holealigned with respective source/drain 2224 using lithography and etchingprocesses and depositing conductive materials to fill the electrode holeusing thin film deposition processes. In some implementations, commonplate 2232 is formed on capacitors 2230 by patterning and etching anelectrode trench aligned with capacitors dielectrics 2230 usinglithography and etching processes and depositing conductive materials tofill the electrode trench using thin film deposition processes.

At operation 2610 in FIG. 26 , the substrate is thinned to expose asecond end of the semiconductor body opposite to the first end. Asillustrated in FIG. 22 , a carrier substrate 2234 (a.k.a. a handlesubstrate) is bonded onto the front side of SOI substrate 2201 on whichdevices are formed using any suitable bonding processes, such as anodicbonding, fusion bonding, transfer bonding, adhesive bonding, andeutectic bonding. The bonded structure can then be flipped upside down,such that handle layer 2202 of SOI substrate 2201 become above carriersubstrate 2234.

As illustrated in FIG. 22J, SOI substrate 2201 is thinned to expose theundoped upper ends of semiconductor bodies 2206 (used to be the lowerends before flipping over). In some implementations, planarizationprocesses (e.g., CMP) and/or etching processes are performed to removehandle layer 2202 and buried oxide layer 2203 (shown in FIG. 22G) of SOIsubstrate 2201 until being stopped by the upper ends of semiconductorbodies 2206.

At operation 2612 in FIG. 26 , the exposed second end of thesemiconductor body is doped. As illustrated in FIG. 22J, the exposedupper end of each semiconductor body 2206, e.g., one of the two ends ofsemiconductor body 2206 in the vertical direction (the z-direction) thatis away from carrier substrate 2234, is doped to form anothersource/drain 2236 (e.g., a drain terminal of the vertical transistor).In some implementations, an implantation process and/or thermaldiffusion process are performed to dope P-type dopants or N-type dopantsto exposed upper ends of semiconductor bodies 2206 to formsources/drains 2236. In some implementations, a silicide layer is formedon source/drain 2236 by performing a silicidation process at the exposedupper ends of semiconductor bodies 2206. As a result, verticaltransistors having semiconductor body 2206, sources/drains 2224 and2236, gate dielectric 2214, and the gate electrode (part of conductivelayer 2216) are formed thereby, as shown in FIG. 22J, according to someimplementations. As described above, capacitors 2230 are thereby formedas well, and DRAM cells 2280 each having a double-gate verticaltransistor and a capacitor coupled to the double-gate verticaltransistor are thereby formed, as shown in FIG. 22J, according to someimplementations.

Referring back to FIG. 23 , method 2300 proceeds to operation 2308, asillustrated in FIG. 23 , in which an interconnect layer including bitlines is formed above the array of memory cells. As illustrated in FIG.22K, an interconnect layer 2240 can be formed above DRAM cells 2280.Interconnect layer 2240 can include interconnects of MEOL and/or BEOL ina plurality of ILD layers to make electrical connections with DRAM cells2280. In some implementations, interconnect layer 2240 includes multipleILD layers and interconnects therein formed in multiple processes. Forexample, the interconnects in interconnect layers 2240 can includeconductive materials deposited by one or more thin film depositionprocesses including, but not limited to, CVD, PVD, ALD, electroplating,electroless plating, or any combination thereof. Fabrication processesto form the interconnects can also include photolithography, CMP,wet/dry etch, or any other suitable processes. The ILD layers caninclude dielectric materials deposited using one or more thin filmdeposition processes including, but not limited to, CVD, PVD, ALD, orany combination thereof. The ILD layers and interconnects illustrated inFIG. 22K can be collectively referred to as interconnect layer 2240.

As shown in FIG. 26 , at operation 2614, to form the interconnect layer,a bit line is formed on the doped second end. As illustrated in FIG.22K, bit line 2238 can be formed on sources/drains 2236 by patterningand etching a trench aligned with respective source/drain 2236 usinglithography and etching processes and depositing conductive materials tofill the trench using thin film deposition processes. In someimplementations, forming bit line 2238 includes depositing a metal layeronto the exposed end of semiconductor body 2220. As a result, bit line2238 and capacitor 2230 can be formed on opposite sides of semiconductorbody 2206 and coupled to opposite ends of semiconductor body 2206. It isunderstood that additional local interconnects, such as word linecontacts, capacitor contacts (e.g., a conductor), and bit line contacts(e.g., a metal silicide contact) may be similarly formed as well. Insome implementations, the bit line contact (e.g., a metal silicidecontact) is formed on the exposed end of semiconductor body 2220, andbit line 2238 is formed on the bit line contact.

Method 2300 proceeds to operation 2310, as illustrated in FIG. 23 , inwhich a second bonding layer is formed above the array of memory cellsand the interconnect layer. The second bonding layer can include asecond bonding contact. As illustrated in FIG. 22K, a bonding layer 2242is formed above interconnect layer 2240 and DRAM cells 2280. Bondinglayer 2242 can include a plurality of bonding contacts surrounded bydielectrics. In some implementations, a dielectric layer (e.g., ILDlayer) is deposited on the top surface of interconnect layer 2240 by oneor more thin film deposition processes including, but not limited to,CVD, PVD, ALD, or any combination thereof. The bonding contacts can thenbe formed through the dielectric layer and in contact with theinterconnects in interconnect layer 2240 by first patterning contactholes through the dielectric layer using patterning process (e.g.,photolithography and dry/wet etch of dielectric materials in thedielectric layer). The contact holes can be filled with a conductor(e.g., Cu). In some implementations, filling the contact holes includesdepositing a barrier layer, an adhesion layer, and/or a seed layerbefore depositing the conductor.

Method 2300 proceeds to operation 2312, as illustrated in FIG. 23 , inwhich the first semiconductor structure and the second semiconductorstructure are bonded in a face-to-face manner, such that the first arrayof memory cells is coupled to the peripheral circuit across a bondinginterface. The bonding can include hybrid bonding. In someimplementations, the first bonding contact is in contact with the secondbonding contact at the bonding interface after the bonding. In someimplementations, the second semiconductor structure is above the firstsemiconductor structure after the bonding. In some implementations, thefirst semiconductor structure is above the second semiconductorstructure after the bonding.

As illustrated in FIG. 22L, carrier substrate 2234 and components formedthereon (e.g., DRAM cells 2280) are flipped upside down. As illustratedin FIG. 22L, bonding layer 2242 facing down is bonded with bonding layer2252 facing up, e.g., in a face-to-face manner, thereby forming abonding interface 2254. In some implementations, a treatment process,e.g., a plasma treatment, a wet treatment, and/or a thermal treatment,is applied to the bonding surfaces prior to the bonding. Although notshown in FIG. 22L, silicon substrate 2244 and components formed thereon(e.g., peripheral circuits 2246) can be flipped upside down, and bondinglayer 2252 facing down can be bonded with bonding layer 2242 facing up,e.g., in a face-to-face manner, thereby forming bonding interface 2254.After the bonding, the bonding contacts in bonding layer 2242 and thebonding contacts in bonding layer 2252 are aligned and in contact withone another, such that DRAM cells 2280 can be electrically connected toperipheral circuits 2246 across bonding interface 2254. It is understoodthat in the bonded chip, DRAM cells 2280 may be either above or belowperipheral circuits 2246. Nevertheless, bonding interface 2254 can beformed vertically between peripheral circuits 2246 and DRAM cells 2280after the bonding.

Method 2300 proceeds to operation 2314, as illustrated in FIG. 23 , inwhich a pad-out interconnect layer is formed on the backside of thefirst semiconductor structure or the second semiconductor structure. Asillustrated in FIG. 22M, a pad-out interconnect layer 2256 is formedabove on the backside of carrier substrate 2234. Pad-out interconnectlayer 2256 can include interconnects, such as pad contacts 2258, formedin one or more ILD layers. Pad contacts 2258 can include conductivematerials including, but not limited to, W, Co, Cu, Al, doped silicon,silicides, or any combination thereof. The ILD layers can includedielectric materials including, but not limited to, silicon oxide,silicon nitride, silicon oxynitride, low-k dielectrics, or anycombination thereof. In some implementations, after the bonding,contacts 2260 are formed extending vertically through carrier substrate2234, for example, by wet/dry etching processes, followed by depositingconductive materials. Contacts 2260 can be in contact with theinterconnects in pad-out interconnect layer 2256. It is understood thatin some examples, carrier substrate 2234 may be thinned or removed afterbonding and prior to forming pad-out interconnect layer 2256 andcontacts 2260, for example, using planarization processes and/or etchingprocesses.

Although not shown, it is understood that in some examples, pad-outinterconnect layer 2256 may be formed above on the backside of siliconsubstrate 2244, and contacts 2260 may be formed extending verticallythrough silicon substrate 2244. Silicon substrate 2244 may be thinnedprior to forming pad-out interconnect layer 2256 and contacts 2260, forexample, using planarization processes and/or etching processes.Although not shown, it is further understood that in some examples, thefabrication processes described with respect to FIGS. 14A-14E and15A-15D may be applied to form another array of DRAM cells 2280 inanother semiconductor structure bonded to the semiconductor structureincluding DRAM cells 2280 described above with respect to FIGS. 22A-22M.

According to one aspect of the present disclosure, a 3D memory deviceincludes a first semiconductor structure, a second semiconductorstructure, and a bonding interface between the first semiconductorstructure and the second semiconductor structure. The firstsemiconductor structure includes a peripheral circuit. The secondsemiconductor structure includes an array of memory cells and aplurality of bit lines coupled to the memory cells and each extending ina second direction perpendicular to the first direction. Each of thememory cells includes a vertical transistor extending in a firstdirection, and a storage unit coupled to the vertical transistor. Thevertical transistor includes a semiconductor body extending in the firstdirection, and a gate structure in contact with all sides of thesemiconductor body. A respective one of the bit lines and a respectivestorage unit are coupled to opposite ends of each one of the memorycells in the first direction. The array of memory cells is coupled tothe peripheral circuit across the bonding interface.

In some implementations, the vertical transistor is a GAA transistor inwhich the gate structure fully circumscribes the semiconductor body in aplan view.

In some implementations, the second semiconductor structure furtherincludes a plurality of word lines each extending in a third directionperpendicular to the first direction and the second direction.

In some implementations, the gate structure includes a gate electrode,and a gate dielectric between the gate electrode and the semiconductorbody in the second and third directions.

In some implementations, the gate dielectrics of two adjacent verticaltransistors of the vertical transistors in the third direction areseparate.

In some implementations, the vertical transistor further includes asource and a drain disposed at two ends of the semiconductor body,respectively, in the first direction.

In some implementations, one of the source and the drain of the verticaltransistor is coupled to the storage unit in a respective memory cell.

In some implementations, another one of the source and the drain of thevertical transistor is coupled to the respective bit line.

In some implementations, the bit lines are disposed between the verticaltransistors and the bonding interface.

In some implementations, two ends of the semiconductor body in the firstdirection extend beyond the gate structure, respectively.

In some implementations, the second semiconductor structure furtherincludes a pad-out interconnect layer, and the storage units aredisposed between the vertical transistors and the pad-out interconnectlayer.

In some implementations, the first semiconductor structure furtherincludes a pad-out interconnect layer, and the peripheral circuit isdisposed between the bonding interface and the pad-out interconnectlayer.

According to another aspect of the present disclosure, a memory systemincludes a memory device configured to store data and a memorycontroller coupled to the memory device. The memory device includes afirst semiconductor structure, a second semiconductor structure, and abonding interface between the first semiconductor structure and thesecond semiconductor structure. The first semiconductor structureincludes a peripheral circuit. The second semiconductor structureincludes an array of memory cells and a plurality of bit lines coupledto the memory cells and each extending in a second directionperpendicular to the first direction. Each of the memory cells includesa vertical transistor extending in a first direction, and a storage unitcoupled to the vertical transistor. The vertical transistor includes asemiconductor body extending in the first direction, and a gatestructure in contact with all sides of the semiconductor body. Arespective one of the bit lines and a respective storage unit arecoupled to opposite ends of each one of the memory cells in the firstdirection. The array of memory cells is coupled to the peripheralcircuit across the bonding interface. The memory controller isconfigured to control the array of memory cells through the peripheralcircuit and the bit lines.

In some implementations, the memory system further includes a hostcoupled to the memory controller and configured to send or receive thedata to or from the memory device.

In some implementations, the memory cells comprise at least a DRAM cell,a PCM cell, or a FRAM cell.

According to still another aspect of the present disclosure, a methodfor forming a 3D memory device is disclosed. A first semiconductorstructure including a peripheral circuit is formed. A secondsemiconductor structure is formed. To form the second semiconductorstructure, an array of memory cells is formed, and a plurality of bitlines coupled to the memory cells are formed. Each of the memory cellsincludes a vertical transistor extending in a first direction, and astorage unit coupled to the vertical transistor. The vertical transistorincludes a semiconductor body extending in the first direction, and agate structure in contact with all sides of the semiconductor body. Arespective one of the bit lines and a respective storage unit arecoupled to opposite ends of each one of the memory cells vertically. Thefirst semiconductor structure and the second semiconductor structure arebonded in a face-to-face manner, such that the array of memory cells iscoupled to the peripheral circuit across a bonding interface.

In some implementations a pad-out interconnect layer is formed on abackside of the first semiconductor structure or the secondsemiconductor structure after the bonding.

In some implementations, the bonding includes hybrid bonding.

In some implementations, to form the array of memory cells, a stack ofdielectric layers is formed on a substrate, a semiconductor bodyextending from the substrate through the stack of dielectric layers isformed, one of the stack of dielectric layers is removed to expose partof the semiconductor body, a gate structure in contact with a pluralityof sides of the exposed part of the semiconductor body is formed, and astorage unit in contact with the semiconductor body is formed.

In some implementations, to form the semiconductor body, an openingextending through the stack of dielectric layers is etched to exposepart of the substrate, and the semiconductor body is epitaxially grownfrom the exposed part of the substrate in the opening.

In some implementations, to form the gate structure, a gate dielectricis formed over the exposed part of the semiconductor body, a conductivelayer is formed over the gate dielectric, and the conductive layer ispatterned to form a gate electrode over the gate dielectric.

In some implementations, to form the array of memory cells, a first endof the semiconductor body away from the substrate is doped prior toforming the storage unit, the substrate is removed to expose a secondend of the semiconductor body opposite to the first end after formingthe storage unit, and the exposed second end of the semiconductor bodyis doped.

In some implementations, to form the storage unit, a first electrode isformed on the doped first end of the semiconductor body, a capacitordielectric is formed on the first electrode, and a second electrode isformed on the capacitor dielectric.

In some implementations, to form the bit lines, a respective one of thebit lines is formed on the doped second end of the semiconductor body.

In some implementations, to form the stack of dielectric layers, threelayers having a first dielectric, a second dielectric, and the firstdielectric, are subsequently deposited, respectively.

In some implementations, to form the stack of dielectric layers, twolayers having a first dielectric and a second dielectric, aresubsequently deposited, respectively.

In some implementations, the first dielectric includes silicon oxide,and the second dielectric includes silicon nitride.

In some implementations, to remove one of the stack of dielectriclayers, a trench is etched through at least part of the stack ofdielectric layers to expose the layer having the second dielectric, andthe layer having the second dielectric is etched away via the trench.

In some implementations, the trench is etched aligned with one side ofthe semiconductor body to expose the semiconductor body from the side.

In some implementations, to form the stack of dielectric layers, fourlayers having a first dielectric, a second dielectric, a thirddielectric, and the second dielectric, are subsequently deposited,respectively.

In some implementations, the second dielectric includes silicon nitride,and the third dielectric includes silicon oxide.

In some implementations, to remove one of the stack of dielectriclayers, a trench is etched through at least part of the stack ofdielectric layers to expose the layer having the third dielectric, andthe layer having the third dielectric is etched away via the trench.

The foregoing description of the specific implementations can be readilymodified and/or adapted for various applications. Therefore, suchadaptations and modifications are intended to be within the meaning andrange of equivalents of the disclosed implementations, based on theteaching and guidance presented herein.

The breadth and scope of the present disclosure should not be limited byany of the above-described exemplary implementations, but should bedefined only in accordance with the following claims and theirequivalents.

1-20. (canceled)
 21. A memory device, comprising: a memory cellcomprising a vertical transistor, and a storage unit having a first endcoupled to a first terminal of the vertical transistor, the verticaltransistor comprising a semiconductor body extending in a firstdirection, and a gate structure coupled to at least one side of thesemiconductor body; a metal bit line coupled to a second terminal of thevertical transistor via an ohmic contact and extending in a seconddirection perpendicular to the first direction; a dielectric layeropposing the memory cell with the metal bit line positioned between thedielectric layer and the memory cell; and a conductor extending from thedielectric layer to couple to a second end of the storage unit.
 22. Thememory device of claim 21, wherein the ohmic contact includes a metalsilicide contact.
 23. The memory device of claim 21, wherein thedielectric layer includes a bonding interface having metallic bond pads.24. The memory device of claim 23, further comprising a peripheralcircuit, wherein the bonding interface is positioned between theperipheral circuit and the metal bit line, and the metal bit line iscoupled to the peripheral circuit through the metallic bonding pads ofthe bonding interface.
 25. The memory device of claim 24, wherein themetal bit line is positioned between the vertical transistor and thebonding interface.
 26. The memory device of claim 24, wherein thevertical transistor is positioned between the bonding interface and thestorage unit.
 27. The memory device of claim 21, further comprising apad-out interconnect layer, wherein the storage unit is positionedbetween the vertical transistor and the pad-out interconnect layer. 28.The memory device of claim 21, further comprising a word line coupled toat least one side of the gate structure and extending in a thirddirection perpendicular to the first direction and the second direction.29. The memory device of claim 21, wherein the vertical transistorfurther comprises a source and a drain at opposite ends of thesemiconductor body in the first direction; and one of the source or thedrain is coupled to the storage unit, and another one of the source orthe drain is coupled to the metal bit line.
 30. The memory device ofclaim 21, wherein the memory cell comprises at least a dynamicrandom-access memory (DRAM) cell, a phase-change memory (PCM) cell, or aferroelectric RAM (FRAM) cell.
 31. A memory device, comprising: a memorycell comprising a vertical transistor, and a storage unit having a firstend coupled to a first terminal of the vertical transistor, the verticaltransistor comprising a semiconductor body extending in a firstdirection, and a gate structure coupled to at least one side of thesemiconductor body; a metal bit line coupled to a second terminal of thevertical transistor via a metal silicide contact and extending in asecond direction perpendicular to the first direction; and a dielectriclayer opposing the memory cell with the metal bit line positionedbetween the dielectric layer and the memory cell.
 32. The memory deviceof claim 31, further comprising a conductor extending from thedielectric layer to couple to a second end of the storage unit.
 33. Thememory device of claim 31, wherein the dielectric layer includes abonding interface having metallic bond pads.
 34. The memory device ofclaim 33, further comprising a peripheral circuit, wherein the bondinginterface is positioned between the peripheral circuit and the metal bitline, and the metal bit line is coupled to the peripheral circuitthrough the metallic bonding pads of the bonding interface.
 35. Thememory device of claim 34, wherein the metal bit line is positionedbetween the vertical transistor and the bonding interface.
 36. Thememory device of claim 34, wherein the vertical transistor is positionedbetween the bonding interface and the storage unit.
 37. The memorydevice of claim 31, further comprising a pad-out interconnect layer,wherein the storage unit is positioned between the vertical transistorand the pad-out interconnect layer.
 38. The memory device of claim 31,further comprising a word line coupled to at least one side of the gatestructure and extending in a third direction perpendicular to the firstdirection and the second direction.
 39. The memory device of claim 31,wherein the vertical transistor further comprises a source and a drainat opposite ends of the semiconductor body in the first direction; andone of the source or the drain is coupled to the storage unit, andanother one of the source or the drain is coupled to the metal bit line.40. The memory device of claim 31, wherein the memory cell comprises atleast a dynamic random-access memory (DRAM) cell, a phase-change memory(PCM) cell, or a ferroelectric RAM (FRAM) cell.
 41. A memory device,comprising: an array of memory cells, each of the memory cellscomprising a vertical transistor, and a storage unit having a first endcoupled to a first terminal of the vertical transistor, the verticaltransistor comprising a semiconductor body extending in a firstdirection, and a gate structure coupled to at least one side of thesemiconductor body, wherein the gate structures of a row of the verticaltransistors are continuous in a third direction perpendicular to thefirst direction.
 42. The memory device of claim 41, further comprising ametal bit line coupled to second terminals of a column of the verticaltransistors via ohmic contacts and extending in a second directionperpendicular to the first and third directions.
 43. The memory deviceof claim 42, wherein the ohmic contacts include metal silicide contacts.44. The memory device of claim 42, further comprising: a dielectriclayer opposing the memory cells with the metal bit line positionedbetween the dielectric layer and the memory cells; and a conductorextending from the dielectric layer to couple to second ends of thestorage units.
 45. The memory device of claim 44, wherein the dielectriclayer includes a bonding interface having metallic bond pads.
 46. Thememory device of claim 45, further comprising a peripheral circuit,wherein the bonding interface is positioned between the peripheralcircuit and the metal bit line, and the metal bit line is coupled to theperipheral circuit through the metallic bonding pads of the bondinginterface.
 47. The memory device of claim 45, wherein the dielectriclayer is positioned between the bonding interface and the metal bitline.
 48. The memory device of claim 45, wherein the vertical transistoris positioned between the bonding interface and the storage unit. 49.The memory device of claim 41, further comprising a trench isolationextending in the third direction and positioned between two adjacentrows of the vertical transistors, wherein the two adjacent rows of thevertical transistors are mirror-symmetric with respect to the trenchisolation.
 50. The memory device of claim 42, wherein each verticaltransistor further comprises a source and a drain at opposite ends ofthe semiconductor body in the first direction; and one of the source orthe drain is coupled to the respective storage unit, and another one ofthe source or the drain is coupled to the metal bit line.
 51. A methodfor forming a memory device, comprising: etching a first substrate in asecond direction to form first trenches; depositing a dielectric to fillthe first trenches to form trench isolations; etching the firstsubstrate and the trench isolations in a third direction perpendicularto the second direction to form second trenches and a semiconductor bodyof a vertical transistor, wherein the semiconductor body extends in afirst direction perpendicular to the third and second directions and isa surrounded by the second trenches and the trench isolations; forming agate structure of the vertical transistor coupled to at least one sideof the semiconductor body along the third direction; forming a storageunit adjacent to a first end of the semiconductor body in the firstdirection; thinning the first substrate to expose a second end of thesemiconductor body opposite the first end in the first direction; andforming a bit line adjacent to the second end of the semiconductor bodyand extending in the second direction.
 52. The method of claim 51,further comprising doping the exposed second end of the semiconductorbody to form a drain terminal of the vertical transistor prior toforming the bit line, wherein the bit line is coupled to the drainterminal.
 53. The method of claim 51, wherein forming the bit linecomprises depositing a metal layer onto the exposed second end of thesemiconductor body.
 54. The method of claim 51, further comprisingforming a metal silicide contact on the exposed second end of thesemiconductor body, wherein the bit line is formed on the metal silicidecontact.
 55. The method of claim 51, wherein thinning the firstsubstrate comprises: attaching a carrier substrate above the storageunit and opposite the first substrate; and polishing the first substrateuntil the second end of the semiconductor body is exposed.
 56. Themethod of claim 51, further comprising doping the first end of thesemiconductor body to form a source terminal of the vertical transistorprior to forming the storage unit, wherein the storage unit is coupledto the source terminal.
 57. The method of claim 51, further comprisingforming a dielectric layer on the bit line.
 58. The method of claim 57,further comprising forming a first bonding layer on the dielectriclayer, the first bonding layer comprising a first bonding contact. 59.The method of claim 58, further comprising: forming a peripheral circuiton a second substrate; forming a second bonding layer above theperipheral circuit, the second bonding layer comprising a second bondingcontact; and bonding the first bonding layer and the second bondinglayer, such that the first bonding contact is in contact with the secondbonding contact.
 60. The method of claim 59, further comprising forminga pad-out interconnect layer opposite the second substrate afterbonding.